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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock5,680 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock5,232 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 133MHZ 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 1.6ms
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock2,112 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 1.6ms | - | 2.3 V ~ 3.6 V | -40°C ~ 105°C | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock4,320 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock5,760 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock7,072 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock2,512 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock5,184 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 333MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
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Package: 84-TFBGA |
Stock2,160 |
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DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock4,240 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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Package: 78-TFBGA |
Stock6,912 |
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DRAM | SDRAM - DDR3 | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 36MBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-TFBGA
- Supplier Device Package: 36-TFBGA (6x8)
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Package: 36-TFBGA |
Stock5,056 |
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SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 2.4 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 36-TFBGA | 36-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock5,808 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock4,064 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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Package: 78-TFBGA |
Stock7,088 |
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DRAM | SDRAM - DDR3L | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock6,400 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock7,472 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock3,392 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 42-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 42-SOJ
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Package: 42-BSOJ (0.400", 10.16mm Width) |
Stock3,264 |
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DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm Width) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 24TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 1.6ms
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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Package: 24-TBGA |
Stock3,904 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 1.6ms | - | 2.3 V ~ 3.6 V | -40°C ~ 105°C | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 24TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 1.6ms
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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Package: 24-TBGA |
Stock5,616 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 1.6ms | - | 2.3 V ~ 3.6 V | -40°C ~ 105°C | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
|
Package: 60-TFBGA |
Stock5,312 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock2,480 |
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DRAM | SDRAM - DDR3L | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
|
Package: 84-TFBGA |
Stock6,160 |
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DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 44TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 50-TSOP (0.400", 10.16mm Width), 44 Leads
- Supplier Device Package: 50/44-TSOP II
|
Package: 50-TSOP (0.400", 10.16mm Width), 44 Leads |
Stock4,912 |
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DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 50-TSOP (0.400", 10.16mm Width), 44 Leads | 50/44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TFBGA
- Supplier Device Package: 165-TFBGA (13x15)
|
Package: 165-TFBGA |
Stock5,856 |
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SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TFBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 66TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
|
Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock3,296 |
|
DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
|
Package: 84-TFBGA |
Stock6,528 |
|
DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |