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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 125MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 125MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x13)
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Package: 54-TFBGA |
Stock6,496 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 400MHZ 84BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (10.5x13)
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Package: 84-TFBGA |
Stock6,640 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock210,336 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock6,320 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 166MHZ 90FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (2M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock2,256 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 166MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (2M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock3,456 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 250MHZ 165BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QUAD
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.71 V ~ 1.89 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-LFBGA (15x17)
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Package: 165-LBGA |
Stock5,600 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (1M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,232 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock4,000 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 1GBIT 166MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile DDR
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10)
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Package: 60-TFBGA |
Stock3,680 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock4,768 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 166MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock5,088 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 1GBIT 800MHZ 78BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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Package: 78-TFBGA |
Stock7,664 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 12NS 48MINIBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-miniBGA (6x8)
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Package: 48-TFBGA |
Stock7,968 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 12NS 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.400", 10.16mm Width)
- Supplier Device Package: 32-TSOP II
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Package: 32-SOIC (0.400", 10.16mm Width) |
Stock5,952 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 2MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP2
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock37,800 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock3,120 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock2,448 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1.066GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.26 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock3,600 |
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ISSI, Integrated Silicon Solution Inc |
64Mb QPI/QSPI, 8-pin WSON 5X6MM,
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: -
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
1G, 1.35V, DDR3L, 128Mx8, 1866MT
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (8x10.5)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
4G, 1.2V, DDR4, 512Mx8, 2400MT/s
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gbit
- Memory Interface: POD
- Clock Frequency: 1.2 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (10x14)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
1 Gbit (x8, 4 bit ECC), 63 Ball
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 30 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (9x11)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 2MBIT SPI/QUAD 8USON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: 8 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-USON (2x3)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +105C), 2
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 256MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 40µs, 800µs
- Access Time: -
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
256M, 1.2/1.8V, LPDDR2, 8Mx32, 4
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 256Mbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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Package: - |
Request a Quote |
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