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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 32MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 32Mb (2M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock5,776 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 1GBIT 400MHZ 134TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 1Gb (32M x 32)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: 0°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 134-TFBGA
- Supplier Device Package: 134-TFBGA (10x11.5)
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Package: 134-TFBGA |
Stock2,752 |
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ISSI, Integrated Silicon Solution Inc |
IC PSRAM 64MBIT 70NS 54BGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (6x8)
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Package: 54-VFBGA |
Stock5,664 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 16MBIT 166MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (6.4x10.1)
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Package: 60-TFBGA |
Stock6,528 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock5,104 |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 8MBIT 104MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 1ms
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
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Package: 8-WDFN Exposed Pad |
Stock5,216 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 133MHZ 54TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x13)
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Package: 54-TFBGA |
Stock117,000 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (16M x 8)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock30,420 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 55NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,408 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 35NS 32SOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.445", 11.30mm Width)
- Supplier Device Package: 32-SOP
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Package: 32-SOIC (0.445", 11.30mm Width) |
Stock4,512 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (1M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock4,192 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 667MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock5,856 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 3MBIT 10NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 3Mb (128K x 24)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock7,280 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 70NS 48MINIBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-miniBGA (7.2x8.7)
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Package: 48-TFBGA |
Stock5,840 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 143MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock13,944 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 166MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock5,568 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 400MHZ 84BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
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Package: 84-TFBGA |
Stock4,464 |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 2MBIT 55NS 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP I
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock5,536 |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 128M SPI 133MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 1.65 V ~ 1.95 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: 8-WDFN Exposed Pad |
Stock8,280 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 576M PARALLEL 300MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (64M x 9)
- Memory Interface: Parallel
- Clock Frequency: 300MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 144-TBGA
- Supplier Device Package: 144-TWBGA (11x18.5)
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Package: 144-TBGA |
Stock3,872 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock2,688 |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 4M SPI 104MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mb (512K x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 1ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 1.95 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
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Package: 8-WDFN Exposed Pad |
Stock2,336 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 144LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 144-LFBGA
- Supplier Device Package: 144-LFBGA (12x12)
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Package: 144-LFBGA |
Stock4,672 |
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ISSI, Integrated Silicon Solution Inc |
2Mb, Serial SRAM, 2.7V-3.6V, 45M
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 2Mbit
- Memory Interface: SPI - Quad I/O, SDI
- Clock Frequency: 45 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 15 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
1G, 1.8V, Mobile DDR, 64Mx16, 20
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 208 MHz
- Write Cycle Time - Word, Page: 14.4ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x10)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: - |
Request a Quote |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 256MBIT PAR 64LFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 200µs
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-LFBGA (9x9)
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Package: - |
Stock642 |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +105C), 2
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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Package: - |
Request a Quote |
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