Page 79 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFH15N60
IXYS

MOSFET N-CH 600V 15A TO-247AD

Package: TO-247-3

Stock3,360
IXFH22N55
IXYS

MOSFET N-CH 550V 22A TO-247AD

Package: TO-247-3

Stock2,880
IXFH13N50
IXYS

MOSFET N-CH 500V 13A TO-247AD

Package: TO-247-3

Stock6,264
IXFH35N30
IXYS

MOSFET N-CH 300V 35A TO-247AD

Package: TO-247-3

Stock11,148
IXFH67N10
IXYS

MOSFET N-CH 100V 67A TO-247AD

Package: TO-247-3

Stock5,440
IRFP450
IXYS

MOSFET N-CH 500V 14A TO-247AD

Package: TO-3P-3 Full Pack

Stock14,988
VMO650-01F
IXYS

MOSFET N-CH 100V 690A MODULE

Package: Y3-DCB

Stock6,832
VMO550-01F
IXYS

MOSFET N-CH 100V 590A Y3-DCB

Package: Y3-DCB

Stock3,264
IXTX5N250
IXYS

MOSFET N-CH 2500V 5A PLUS247

Package: TO-247-3

Stock7,904
IXTX4N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

Package: TO-247-3 Variant

Stock6,544
IXTN5N250
IXYS

MOSFET N-CH 2500V 5A SOT227B

Package: SOT-227-4, miniBLOC

Stock3,216
IXFN32N120P
IXYS

MOSFET N-CH 1200V 32A SOT-227B

Package: SOT-227-4, miniBLOC

Stock2,112
IXTN62N50L
IXYS

MOSFET N-CH 500V 62A SOT-227

Package: SOT-227-4, miniBLOC

Stock5,776
IXFN39N90
IXYS

MOSFET N-CH 900V 39A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,840
IXFE39N90
IXYS

MOSFET N-CH 900V 34A ISOPLUS227

Package: SOT-227-4, miniBLOC

Stock3,712
IXFN36N110P
IXYS

MOSFET N-CH 1100V 36A SOT-227B

Package: SOT-227-4, miniBLOC

Stock2,912
IXFE36N100
IXYS

MOSFET N-CH 1000V 33A ISOPLUS227

Package: SOT-227-4, miniBLOC

Stock2,320
IXTB30N100L
IXYS

MOSFET N-CH 1000V 30A PLUS264

Package: TO-264-3, TO-264AA

Stock7,872
IXFN40N110P
IXYS

MOSFET N-CH 1100V 34A SOT-227B

Package: SOT-227-4, miniBLOC

Stock4,960
IXFN30N120P
IXYS

MOSFET N-CH 1200V 30A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,344

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFH15N60	IXYS	MOSFET N-CH 600V 15A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,360	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	4.5V @ 4mA	170nC @ 10V	4500pF @ 25V	±20V	-	300W (Tc)	500 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH22N55	IXYS	MOSFET N-CH 550V 22A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,880	MOSFET (Metal Oxide)	550V	22A (Tc)	10V	4.5V @ 4mA	170nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	270 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH13N50	IXYS	MOSFET N-CH 500V 13A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,264	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 2.5mA	120nC @ 10V	2800pF @ 25V	±20V	-	180W (Tc)	400 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH35N30	IXYS	MOSFET N-CH 300V 35A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock11,148	MOSFET (Metal Oxide)	300V	35A (Tc)	10V	4V @ 4mA	200nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	100 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH67N10	IXYS	MOSFET N-CH 100V 67A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 33.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,440	MOSFET (Metal Oxide)	100V	67A (Tc)	10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	±20V	-	300W (Tc)	25 mOhm @ 33.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IRFP450	IXYS	MOSFET N-CH 500V 14A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock14,988	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	150nC @ 10V	2800pF @ 25V	±20V	-	190W (Tc)	400 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-3P-3 Full Pack
VMO650-01F	IXYS	MOSFET N-CH 100V 690A MODULE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 690A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 130mA Gate Charge (Qg) (Max) @ Vgs: 2300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 59000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2500W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Y3-DCB Package / Case: Y3-DCB	Package: Y3-DCB	Stock6,832	MOSFET (Metal Oxide)	100V	690A	10V	6V @ 130mA	2300nC @ 10V	59000pF @ 25V	±20V	-	2500W (Tc)	1.8 mOhm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-DCB	Y3-DCB
VMO550-01F	IXYS	MOSFET N-CH 100V 590A Y3-DCB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 590A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 110mA Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2200W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Y3-DCB Package / Case: Y3-DCB	Package: Y3-DCB	Stock3,264	MOSFET (Metal Oxide)	100V	590A	10V	6V @ 110mA	2000nC @ 10V	50000pF @ 25V	±20V	-	2200W (Tc)	2.1 mOhm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-DCB	Y3-DCB
IXTX5N250	IXYS	MOSFET N-CH 2500V 5A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 8.8 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,904	MOSFET (Metal Oxide)	2500V	5A (Tc)	10V	5V @ 1mA	200nC @ 10V	8560pF @ 25V	±30V	-	960W (Tc)	8.8 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTX4N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 12.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,544	MOSFET (Metal Oxide)	3000V	4A (Tc)	10V	5V @ 250µA	139nC @ 10V	3680pF @ 25V	±20V	-	960W (Tc)	12.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3 Variant
IXTN5N250	IXYS	MOSFET N-CH 2500V 5A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 8.8 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,216	MOSFET (Metal Oxide)	2500V	5A (Tc)	10V	5V @ 1mA	200nC @ 10V	8560pF @ 25V	±30V	-	700W (Tc)	8.8 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN32N120P	IXYS	MOSFET N-CH 1200V 32A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 32A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 310 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,112	MOSFET (Metal Oxide)	1200V	32A	10V	6.5V @ 1mA	360nC @ 10V	21000pF @ 25V	±30V	-	1000W (Tc)	310 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN62N50L	IXYS	MOSFET N-CH 500V 62A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 62A Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 550nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 800W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,776	MOSFET (Metal Oxide)	500V	62A	20V	5V @ 250µA	550nC @ 20V	11500pF @ 25V	±30V	-	800W (Tc)	100 mOhm @ 500mA, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN39N90	IXYS	MOSFET N-CH 900V 39A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 39A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,840	MOSFET (Metal Oxide)	900V	39A	10V	5V @ 8mA	390nC @ 10V	9200pF @ 25V	±20V	-	694W (Tc)	220 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFE39N90	IXYS	MOSFET N-CH 900V 34A ISOPLUS227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 34A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 580W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 19.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,712	MOSFET (Metal Oxide)	900V	34A	10V	5V @ 8mA	375nC @ 10V	13400pF @ 25V	±20V	-	580W (Tc)	220 mOhm @ 19.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN36N110P	IXYS	MOSFET N-CH 1100V 36A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 36A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,912	MOSFET (Metal Oxide)	1100V	36A	10V	6.5V @ 1mA	350nC @ 10V	23000pF @ 25V	±30V	-	1000W (Tc)	240 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFE36N100	IXYS	MOSFET N-CH 1000V 33A ISOPLUS227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 33A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 455nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 580W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,320	MOSFET (Metal Oxide)	1000V	33A	10V	5.5V @ 8mA	455nC @ 10V	15000pF @ 25V	±20V	-	580W (Tc)	240 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTB30N100L	IXYS	MOSFET N-CH 1000V 30A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 545nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 800W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,872	MOSFET (Metal Oxide)	1000V	30A (Tc)	20V	5V @ 250µA	545nC @ 20V	13200pF @ 25V	±30V	-	800W (Tc)	450 mOhm @ 500mA, 20V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFN40N110P	IXYS	MOSFET N-CH 1100V 34A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 34A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,960	MOSFET (Metal Oxide)	1100V	34A	10V	6.5V @ 1mA	310nC @ 10V	19000pF @ 25V	±30V	-	890W (Tc)	260 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN30N120P	IXYS	MOSFET N-CH 1200V 30A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,344	MOSFET (Metal Oxide)	1200V	30A	10V	6.5V @ 1mA	310nC @ 10V	19000pF @ 25V	±30V	-	890W (Tc)	350 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN34N100	IXYS	MOSFET N-CH 1000V 34A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 34A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,328	MOSFET (Metal Oxide)	1000V	34A	10V	5.5V @ 8mA	380nC @ 10V	9200pF @ 25V	±20V	-	700W (Tc)	280 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
MMIX1F40N110P	IXYS	MOSFET N-CH 1100V 24A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock2,624	MOSFET (Metal Oxide)	1100V	24A (Tc)	10V	6.5V @ 1mA	310nC @ 10V	19000pF @ 25V	±30V	-	500W (Tc)	290 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SMPD	24-PowerSMD, 21 Leads
IXFB30N120Q2	IXYS	MOSFET N-CH 1200V 30A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	Package: ISOPLUS264?	Stock4,352	MOSFET (Metal Oxide)	1200V	30A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS264?	ISOPLUS264?
IXFN130N30	IXYS	MOSFET N-CH 300V 130A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 130A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,368	MOSFET (Metal Oxide)	300V	130A	10V	4V @ 8mA	380nC @ 10V	14500pF @ 25V	±20V	-	700W (Tc)	22 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN80N48	IXYS	MOSFET N-CH 480V 80A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 480V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,728	MOSFET (Metal Oxide)	480V	80A	10V	4V @ 8mA	380nC @ 10V	9890pF @ 25V	±20V	-	700W (Tc)	45 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN40N110Q3	IXYS	MOSFET N-CH 1100V 35A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,008	MOSFET (Metal Oxide)	1100V	35A (Tc)	10V	6.5V @ 8mA	300nC @ 10V	14000pF @ 25V	±30V	-	960W (Tc)	260 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN44N100Q3	IXYS	MOSFET N-CH 1000V 38A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,392	MOSFET (Metal Oxide)	1000V	38A	10V	6.5V @ 8mA	264nC @ 10V	13600pF @ 25V	±30V	-	960W (Tc)	220 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN26N120P	IXYS	MOSFET N-CH 1200V 23A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 23A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,504	MOSFET (Metal Oxide)	1200V	23A	10V	6.5V @ 1mA	225nC @ 10V	14000pF @ 25V	±30V	-	695W (Tc)	460 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC