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IXYS |
MOSFET N-CH 75V 200A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 430W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,232 |
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MOSFET (Metal Oxide) | 75V | 200A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 6800pF @ 25V | ±20V | - | 430W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 55V 182A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock49,380 |
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MOSFET (Metal Oxide) | 55V | 182A (Tc) | 10V | 4V @ 250µA | 114nC @ 10V | 4850pF @ 25V | ±20V | - | 360W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 85V 180A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 430W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock48,000 |
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MOSFET (Metal Oxide) | 85V | 180A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 7500pF @ 25V | ±20V | - | 430W (Tc) | 5.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 55V 180A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock103,464 |
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MOSFET (Metal Oxide) | 55V | 180A (Tc) | - | 4V @ 1mA | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 85V 160A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,880 |
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MOSFET (Metal Oxide) | 85V | 160A (Tc) | 10V | 4V @ 1mA | 164nC @ 10V | 6400pF @ 25V | ±20V | - | 360W (Tc) | 6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 75V 160A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock36,240 |
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MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4V @ 250µA | 112nC @ 10V | 4950pF @ 25V | ±20V | - | 360W (Tc) | 6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 85V 152A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock103,464 |
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MOSFET (Metal Oxide) | 85V | 152A (Tc) | 10V | 4V @ 250µA | 114nC @ 10V | 5500pF @ 25V | ±20V | - | 360W (Tc) | 7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 250A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 730W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
|
Package: TO-264-3, TO-264AA |
Stock3,824 |
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MOSFET (Metal Oxide) | 100V | 250A (Tc) | 10V | 4V @ 250µA | 430nC @ 10V | 12700pF @ 25V | ±20V | - | 730W (Tc) | 5 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 150V 88A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,280 |
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MOSFET (Metal Oxide) | 150V | 88A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 400W (Tc) | 22 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 55V 280A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,960 |
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MOSFET (Metal Oxide) | 55V | 280A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9700pF @ 25V | ±20V | - | 550W (Tc) | 3.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 75V 250A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock3,872 |
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MOSFET (Metal Oxide) | 75V | 250A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | ±20V | - | 550W (Tc) | 4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 55V 240A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock2,896 |
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MOSFET (Metal Oxide) | 55V | 240A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 7600pF @ 25V | ±20V | - | 480W (Tc) | 3.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 85V 230A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,304 |
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MOSFET (Metal Oxide) | 85V | 230A (Tc) | 10V | 4V @ 250µA | 187nC @ 10V | 9900pF @ 25V | ±20V | - | 550W (Tc) | 4.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 75V 220A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock2,400 |
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MOSFET (Metal Oxide) | 75V | 220A (Tc) | 10V | 4V @ 250µA | 165nC @ 10V | 7700pF @ 25V | ±20V | - | 480W (Tc) | 4.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 55V 220A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 430W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,488 |
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MOSFET (Metal Oxide) | 55V | 220A (Tc) | 10V | 4V @ 250µA | 158nC @ 10V | 7200pF @ 25V | ±20V | - | 430W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 85V 200A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,072 |
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MOSFET (Metal Oxide) | 85V | 200A (Tc) | 10V | 4V @ 250µA | 152nC @ 10V | 7600pF @ 25V | ±20V | - | 480W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 75V 200A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 430W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock68,640 |
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MOSFET (Metal Oxide) | 75V | 200A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 6800pF @ 25V | ±20V | - | 430W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 55V 182A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,696 |
|
MOSFET (Metal Oxide) | 55V | 182A (Tc) | 10V | 4V @ 250µA | 114nC @ 10V | 4850pF @ 25V | ±20V | - | 360W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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|
IXYS |
MOSFET N-CH 85V 180A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 430W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock4,064 |
|
MOSFET (Metal Oxide) | 85V | 180A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 7500pF @ 25V | ±20V | - | 430W (Tc) | 5.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 75V 160A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock2,848 |
|
MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4V @ 250µA | 112nC @ 10V | 4950pF @ 25V | ±20V | - | 360W (Tc) | 6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 85V 152A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,976 |
|
MOSFET (Metal Oxide) | 85V | 152A (Tc) | 10V | 4V @ 250µA | 114nC @ 10V | 5500pF @ 25V | ±20V | - | 360W (Tc) | 7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1200V 12A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,744 |
|
MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 5V @ 250µA | 95nC @ 10V | 3400pF @ 25V | ±30V | - | 500W (Tc) | 1.4 Ohm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 55V 160A ISOPLUS I4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC?
- Package / Case: i4-Pac?-5
|
Package: i4-Pac?-5 |
Stock2,784 |
|
MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | ±20V | - | 200W (Tc) | 4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 |
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|
IXYS |
MOSFET N-CH 75V 140A ISOPLUS I4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC?
- Package / Case: i4-Pac?-5
|
Package: i4-Pac?-5 |
Stock3,376 |
|
MOSFET (Metal Oxide) | 75V | 140A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | ±20V | - | 200W (Tc) | 4.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 |
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IXYS |
MOSFET N-CH 85V 130A ISOPLUS I4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250mA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC?
- Package / Case: i4-Pac?-5
|
Package: i4-Pac?-5 |
Stock6,496 |
|
MOSFET (Metal Oxide) | 85V | 130A (Tc) | 10V | 4V @ 250mA | 187nC @ 10V | 9900pF @ 25V | ±20V | - | 200W (Tc) | 5.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS i4-PAC? | i4-Pac?-5 |
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IXYS |
MOSFET N-CH 55V 145A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
|
Package: ISOPLUS220? |
Stock5,632 |
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MOSFET (Metal Oxide) | 55V | 145A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | ±20V | - | 160W (Tc) | 3.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 75V 128A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
|
Package: ISOPLUS220? |
Stock3,888 |
|
MOSFET (Metal Oxide) | 75V | 128A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | ±20V | - | 160W (Tc) | 4.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 55V 132A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
|
Package: ISOPLUS220? |
Stock4,000 |
|
MOSFET (Metal Oxide) | 55V | 132A (Tc) | 10V | 4V @ 1mA | 170nC @ 10V | 7600pF @ 25V | ±20V | - | 150W (Tc) | 4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |