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IXYS |
MOSFET N-CH 170V 245A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 170V
- Current - Continuous Drain (Id) @ 25°C: 245A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1090W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock7,296 |
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MOSFET (Metal Oxide) | 170V | 245A | 10V | 5V @ 8mA | 400nC @ 10V | 24000pF @ 25V | ±20V | - | 1090W (Tc) | 6.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 170V 210A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 170V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock4,256 |
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MOSFET (Metal Oxide) | 170V | 210A (Tc) | 10V | 5V @ 4mA | 285nC @ 10V | 18800pF @ 25V | ±20V | - | 1150W (Tc) | 7.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 170V 210A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 170V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock5,824 |
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MOSFET (Metal Oxide) | 170V | 210A (Tc) | 10V | 5V @ 4mA | 285nC @ 10V | 18800pF @ 25V | ±20V | - | 1150W (Tc) | 7.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 200V 1900A Y3-LI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 1900A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 2900nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 1600A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Y3-Li
- Package / Case: Y3-Li
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Package: Y3-Li |
Stock4,800 |
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MOSFET (Metal Oxide) | 200V | 1900A | 10V | 5V @ 5mA | 2900nC @ 10V | - | ±20V | - | - | 1.7 mOhm @ 1600A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-Li | Y3-Li |
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IXYS |
MOSFET N-CH 55V 200A ISOPLUS-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock7,904 |
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MOSFET (Metal Oxide) | 55V | 200A (Tc) | 10V | 4V @ 2mA | 200nC @ 10V | - | ±20V | - | 300W (Tc) | 5.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 55V 100A ISOPLUS-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
|
Package: ISOPLUS220? |
Stock3,392 |
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MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 1mA | 100nC @ 10V | - | ±20V | - | 150W (Tc) | 7.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 1200V 90A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,184 |
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MOSFET (Metal Oxide) | 1200V | 90A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 280V 80A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 280V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 49 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock18,204 |
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MOSFET (Metal Oxide) | 280V | 80A (Tc) | 10V | 5V @ 1mA | 115nC @ 10V | 5000pF @ 25V | ±30V | - | 500W (Tc) | 49 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 36A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-3P-3 Full Pack
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Package: TO-3P-3 Full Pack |
Stock4,096 |
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MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 4V @ 4mA | 140nC @ 10V | 2970pF @ 25V | ±20V | - | 300W (Tc) | 70 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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IXYS |
MOSFET N-CH 175V 150A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 175V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,032 |
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MOSFET (Metal Oxide) | 175V | 150A (Tc) | 10V | 5V @ 1mA | 155nC @ 10V | 9800pF @ 25V | ±30V | - | 830W (Tc) | 12 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 72A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
|
Package: ISOPLUS220? |
Stock7,264 |
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MOSFET (Metal Oxide) | 100V | 72A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 4500pF @ 25V | ±20V | - | 230W (Tc) | 20 mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 300V 72A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock4,544 |
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MOSFET (Metal Oxide) | 300V | 72A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 500V 12A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock2,896 |
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MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 2.5mA | 120nC @ 10V | 2800pF @ 25V | ±20V | - | 140W (Tc) | 400 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 150V ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock5,968 |
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MOSFET (Metal Oxide) | 150V | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 250V ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock2,384 |
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MOSFET (Metal Oxide) | 250V | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 200V ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock2,176 |
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MOSFET (Metal Oxide) | 200V | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS220? | ISOPLUS220? |
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IXYS |
MOSFET N-CH 200V 72A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,568 |
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MOSFET (Metal Oxide) | 200V | 72A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 250V 62A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,160 |
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MOSFET (Metal Oxide) | 250V | 62A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 300V 54A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,368 |
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MOSFET (Metal Oxide) | 300V | 54A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 150V 80A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3,264 |
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MOSFET (Metal Oxide) | 150V | 80A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 22.5 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 250V 87A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
|
Package: ISOPLUS247? |
Stock5,904 |
|
MOSFET (Metal Oxide) | 250V | 87A (Tc) | 10V | 4V @ 8mA | 300nC @ 10V | 9100pF @ 25V | ±20V | - | 400W (Tc) | 27 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
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|
IXYS |
MOSFET N-CH 550V 48A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 48A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock2,096 |
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MOSFET (Metal Oxide) | 550V | 48A | 10V | 4.5V @ 8mA | 330nC @ 10V | 8900pF @ 25V | ±20V | - | 600W (Tc) | 110 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 48A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 48A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock7,632 |
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MOSFET (Metal Oxide) | 500V | 48A | 10V | 4V @ 8mA | 270nC @ 10V | 8400pF @ 25V | ±20V | - | 520W (Tc) | 100 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 48A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 48A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock3,488 |
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MOSFET (Metal Oxide) | 500V | 48A | 10V | 4V @ 8mA | 270nC @ 10V | 8400pF @ 25V | ±20V | - | 520W (Tc) | 100 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 44A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock4,752 |
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MOSFET (Metal Oxide) | 500V | 44A | 10V | 4V @ 8mA | 270nC @ 10V | 8400pF @ 25V | ±20V | - | 520W (Tc) | 120 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 44A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock7,920 |
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MOSFET (Metal Oxide) | 500V | 44A | 10V | 4V @ 8mA | 270nC @ 10V | 8400pF @ 25V | ±20V | - | 520W (Tc) | 120 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 100V 100A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock7,056 |
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MOSFET (Metal Oxide) | 100V | 100A | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 15 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 100V 100A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock4,512 |
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MOSFET (Metal Oxide) | 100V | 100A | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 15 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |