Page 100 - IXYS Products | Heisener Electronics

IXGH40N60C
IXYS

IGBT 600V 75A 250W TO247AD

Package: TO-247-3

Stock7,136
IXSH30N60B2D1
IXYS

IGBT 600V 48A 250W TO247

Package: TO-247-3

Stock94,152
MWI100-12T8T
IXYS

MOD IGBT TRENCH SIXPACK E3

Package: E3

Stock3,504
IXGN320N60A3
IXYS

IGBT 600V SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,352
IXFK44N80Q3
IXYS

MOSFET N-CH 800V 44A TO-264

Package: TO-264-3, TO-264AA

Stock4,128
IXFR44N50P
IXYS

MOSFET N-CH 500V 24A ISOPLUS247

Package: ISOPLUS247?

Stock7,264
IXTP2N65X2
IXYS

MOSFET N-CH 650V 2A X2 TO-220

Package: TO-220-3

Stock5,152
IXTP16N50P
IXYS

MOSFET N-CH 500V 16A TO-220

Package: TO-220-3

Stock36,792
IXFP60N25X3
IXYS

MOSFET N-CH 250V 60A TO220AB

Package: TO-220-3

Stock7,104
IXTQ88N30P
IXYS

MOSFET N-CH 300V 88A TO-3P

Package: TO-3P-3, SC-65-3

Stock169,464
IXTQ460P2
IXYS

MOSFET N-CH 500V 24A TO3P

Package: TO-3P-3, SC-65-3

Stock5,648
IXTA3N100D2
IXYS

MOSFET N-CH 1000V 3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,896
IXTA3N50D2
IXYS

MOSFET N-CH 500V 3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock10,152
CS22-12IO1M
IXYS

THYRISTOR PHASE 1200V TO220ABFP

Package: TO-220-3 Isolated Tab

Stock30,000
MCC26-14IO1B
IXYS

DUL THYRIS MOD 800-2200V 19-320A

Package: TO-240AA

Stock3,152
VTO39-12HO7
IXYS

RECT BRIDGE 3PH 1200V ECO-PAC1

Package: ECO-PAC1

Stock2,336
MMO74-12IO6
IXYS

MODULE AC CTLR 1200V SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,112
MDD310-18N1
IXYS

DIODE MODULE 1.8KV 305A Y2-DCB

Package: Y2-DCB

Stock5,488
DSEI2X30-10B
IXYS

DIODE MODULE 1KV 30A SOT227B

Package: SOT-227-4, miniBLOC

Stock5,824
VBO30-16NO7
IXYS

DIODE BRIDGE 35A 1600V PWS-A

Package: PWS-A

Stock3,776

Part Number	Manufacturer	Description	Package	Stock
IXGH40N60C	IXYS	IGBT 600V 75A 250W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 250W Switching Energy: 850µJ (off) Input Type: Standard Gate Charge: 116nC Td (on/off) @ 25°C: 25ns/100ns Test Condition: 480V, 40A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock7,136
IXSH30N60B2D1	IXYS	IGBT 600V 48A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Power - Max: 250W Switching Energy: 550µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 30ns/130ns Test Condition: 400V, 24A, 5 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXSH)	Package: TO-247-3	Stock94,152
MWI100-12T8T	IXYS	MOD IGBT TRENCH SIXPACK E3 IGBT Type: Trench Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 145A Power - Max: 480W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 7.21nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	Package: E3	Stock3,504
IXGN320N60A3	IXYS	IGBT 600V SOT-227B IGBT Type: PT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 320A Power - Max: 735W Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A Current - Collector Cutoff (Max): 150µA Input Capacitance (Cies) @ Vce: 18nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: SOT-227-4, miniBLOC	Stock6,352
IXFK44N80Q3	IXYS	MOSFET N-CH 800V 44A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,128
IXFR44N50P	IXYS	MOSFET N-CH 500V 24A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,264
IXTP2N65X2	IXYS	MOSFET N-CH 650V 2A X2 TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,152
IXTP16N50P	IXYS	MOSFET N-CH 500V 16A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock36,792
IXFP60N25X3	IXYS	MOSFET N-CH 250V 60A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock7,104
IXTQ88N30P	IXYS	MOSFET N-CH 300V 88A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock169,464
IXTQ460P2	IXYS	MOSFET N-CH 500V 24A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,648
IXTA3N100D2	IXYS	MOSFET N-CH 1000V 3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,896
IXTA3N50D2	IXYS	MOSFET N-CH 500V 3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock10,152
CS22-12IO1M	IXYS	THYRISTOR PHASE 1200V TO220ABFP Voltage - Off State: 1200V Voltage - Gate Trigger (Vgt) (Max): 1.3V Current - Gate Trigger (Igt) (Max): 30mA Voltage - On State (Vtm) (Max): 1.3V Current - On State (It (AV)) (Max): 16A Current - On State (It (RMS)) (Max): 25A Current - Hold (Ih) (Max): 60mA Current - Off State (Max): 10µA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: TO-220 Isolated Tab	Package: TO-220-3 Isolated Tab	Stock30,000
MCC26-14IO1B	IXYS	DUL THYRIS MOD 800-2200V 19-320A Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): 50A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	Package: TO-240AA	Stock3,152
VTO39-12HO7	IXYS	RECT BRIDGE 3PH 1200V ECO-PAC1 Structure: Bridge, 3-Phase - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 39A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 25mA Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210A Current - Hold (Ih) (Max): 50mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1	Package: ECO-PAC1	Stock2,336
MMO74-12IO6	IXYS	MODULE AC CTLR 1200V SOT-227B Structure: 1-Phase Controller - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 34A Current - On State (It (RMS)) (Max): 53A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 600A, 640A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,112
MDD310-18N1	IXYS	DIODE MODULE 1.8KV 305A Y2-DCB Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io) (per Diode): 305A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 1800V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y2-DCB Supplier Device Package: Y2-DCB	Package: Y2-DCB	Stock5,488
DSEI2X30-10B	IXYS	DIODE MODULE 1KV 30A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 750µA @ 1000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: SOT-227-4, miniBLOC	Stock5,824
VBO30-16NO7	IXYS	DIODE BRIDGE 35A 1600V PWS-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-A Supplier Device Package: PWS-A	Package: PWS-A	Stock3,776
VBO20-14NO2	IXYS	DIODE BRIDGE 31A 1400V STD FO-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 31A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A Current - Reverse Leakage @ Vr: 300µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-A Supplier Device Package: FO-A	Package: 4-Square, FO-A	Stock6,576
VUO36-08NO8	IXYS	RECT BRIDGE 27A 800V FO-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 27A Voltage - Forward (Vf) (Max) @ If: 1.04V @ 15A Current - Reverse Leakage @ Vr: 40µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 5-Square, FO-B Supplier Device Package: FO-B	Package: 5-Square, FO-B	Stock5,584
IXJ611S1T/R	IXYS	IC DRIVER HALF BRIDGE GATE 8SOIC Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SOIC	Package: 8-SOIC	Stock7,008
IXDI402SIA	IXYS	IC MOSFET DRVR DUAL 2A 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock70,392
IXZ631DF18N50	IXYS	500V 18A INTEGRATED POWER MOSFET Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 8 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 95A, 95A Input Type: Inverting High Side Voltage - Max (Bootstrap): 500V Rise / Fall Time (Typ): 3.4ns, 1.65ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, Flat Lead Supplier Device Package: 10-SMD	Package: 10-SMD, Flat Lead	Stock5,632
DLA100B800LB-TUB	IXYS	BIPOLAR MODULE-BRIDGE RECTIFIER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 124 A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	Package: -	Request a Quote
MCMA700P1800CA	IXYS	SCR MODULE 1.8KV 700A COMPACK Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.8 kV Current - On State (It (AV)) (Max): 700 A Current - On State (It (RMS)) (Max): 1100 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: ComPack	Package: -	Request a Quote
MDNA425P2200PTSF	IXYS	DIODE MOD GP 2.2KV 425A SIMBUS Diode Configuration: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io) (per Diode): 425A Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SimBus F Supplier Device Package: SimBus F	Package: -	Request a Quote