Page 170 - IXYS Products | Heisener Electronics

IXST35N120B
IXYS

IGBT 1200V 70A 300W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,280
IXGH72N60C3
IXYS

IGBT 600V 75A 540W TO247AD

Package: TO-247-3

Stock5,248
MUBW50-06A7
IXYS

MODULE IGBT CBI E2

Package: E2

Stock3,760
IXFV30N60PS
IXYS

MOSFET N-CH 600V 30A PLUS220-SMD

Package: PLUS-220SMD

Stock3,856
IXFB50N80Q2
IXYS

MOSFET N-CH 800V 50A PLUS264

Package: TO-264-3, TO-264AA

Stock2,560
IXTP05N100M
IXYS

MOSFET N-CH 1000V 700MA TO-220

Package: TO-220-3

Stock10,008
IXTA08N120P
IXYS

MOSFET N-CH 1200V 0.8A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,088
IXFN80N50
IXYS

MOSFET N-CH 500V 80A SOT-227B

Package: SOT-227-4, miniBLOC

Stock2,896
IXTH1N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

Package: TO-247-3 Variant

Stock5,104
IXFH14N100Q2
IXYS

MOSFET N-CH 1000V 14A TO-247AD

Package: TO-247-3

Stock5,120
VCO132-14IO7
IXYS

MOD THYRISTOR 1400V 130A ECOPAC2

Package: ECO-PAC2

Stock7,040
MCC225-16IO1
IXYS

MOD THYRISTOR DUAL 1600V Y1-CU

Package: Y1-CU

Stock7,328
VHO55-14IO7
IXYS

RECT BRIDGE 1PH 1400V FO-T-A

Package: FO-T-A

Stock6,032
MCC26-16IO1B
IXYS

THYRISTOR MODULE 1600V 2X32A

Package: TO-240AA

Stock6,912
DSB20C60PN
IXYS

DIODE ARRAY SCHOTTKY 60V TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,336
VBO55-12NO7
IXYS

DIODE BRIDGE 1200V 55A FO-T-A

Package: FO-T-A

Stock6,816
UGB3132AD
IXYS

IC MOD DIODE 1PHASE BRIDGE UGB1

Package: UGB-1

Stock4,800
VUO22-08NO1
IXYS

RECT BRIDGE 3PH 25A 800V V1-A

Package: V1-A

Stock6,608
IXDI502D1
IXYS

IC GATE DRIVER DUAL 2A 6-DFN

Package: 6-VDFN Exposed Pad

Stock4,656
MCMA110P1600VA
IXYS

SCR MODULE 1.6KV 110A MODULE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock
IXST35N120B	IXYS	IGBT 1200V 70A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Power - Max: 300W Switching Energy: 5mJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 36ns/160ns Test Condition: 960V, 35A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,280
IXGH72N60C3	IXYS	IGBT 600V 75A 540W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: 540W Switching Energy: 1.03mJ (on), 480µJ (off) Input Type: Standard Gate Charge: 174nC Td (on/off) @ 25°C: 27ns/77ns Test Condition: 480V, 50A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock5,248
MUBW50-06A7	IXYS	MODULE IGBT CBI E2 IGBT Type: NPT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Power - Max: 250W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 800µA Input Capacitance (Cies) @ Vce: 2.8nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	Package: E2	Stock3,760
IXFV30N60PS	IXYS	MOSFET N-CH 600V 30A PLUS220-SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock3,856
IXFB50N80Q2	IXYS	MOSFET N-CH 800V 50A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,560
IXTP05N100M	IXYS	MOSFET N-CH 1000V 700MA TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 700mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,008
IXTA08N120P	IXYS	MOSFET N-CH 1200V 0.8A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,088
IXFN80N50	IXYS	MOSFET N-CH 500V 80A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,896
IXTH1N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock5,104
IXFH14N100Q2	IXYS	MOSFET N-CH 1000V 14A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,120
VCO132-14IO7	IXYS	MOD THYRISTOR 1400V 130A ECOPAC2 Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 130A Current - On State (It (RMS)) (Max): 200A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 300mA Current - Non Rep. Surge 50, 60Hz (Itsm): 3600A, 3850A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 130°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2	Package: ECO-PAC2	Stock7,040
MCC225-16IO1	IXYS	MOD THYRISTOR DUAL 1600V Y1-CU Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 221A Current - On State (It (RMS)) (Max): 400A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y1-CU	Package: Y1-CU	Stock7,328
VHO55-14IO7	IXYS	RECT BRIDGE 1PH 1400V FO-T-A Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1) Number of SCRs, Diodes: 2 SCRs, 2 Diodes Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 53A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A	Package: FO-T-A	Stock6,032
MCC26-16IO1B	IXYS	THYRISTOR MODULE 1600V 2X32A Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): 50A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	Package: TO-240AA	Stock6,912
DSB20C60PN	IXYS	DIODE ARRAY SCHOTTKY 60V TO220FP Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 730mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 60V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: TO-220ABFP	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,336
VBO55-12NO7	IXYS	DIODE BRIDGE 1200V 55A FO-T-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 55A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A Supplier Device Package: FO-T-A	Package: FO-T-A	Stock6,816
UGB3132AD	IXYS	IC MOD DIODE 1PHASE BRIDGE UGB1 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 4800V Current - Average Rectified (Io): 1.3A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: UGB-1 Supplier Device Package: UGB-1	Package: UGB-1	Stock4,800
VUO22-08NO1	IXYS	RECT BRIDGE 3PH 25A 800V V1-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.19V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1-A Supplier Device Package: V1-A	Package: V1-A	Stock6,608
IXDI502D1	IXYS	IC GATE DRIVER DUAL 2A 6-DFN Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 7.5ns, 6.5ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (4x5)	Package: 6-VDFN Exposed Pad	Stock4,656
MCMA110P1600VA	IXYS	SCR MODULE 1.6KV 110A MODULE Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6 kV Current - On State (It (AV)) (Max): 110 A Current - On State (It (RMS)) (Max): 170 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	Package: -	Request a Quote
DNA90YC2200NA	IXYS	DIODE MOD GP 2.2KV 90A SOT227B Diode Configuration: 2 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io) (per Diode): 90A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 2200 V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: -	Request a Quote
IXTY01N100	IXYS	MOSFET N-CH 1000V 100MA TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock73,188
DMA200X1600NA	IXYS	DIODE MOD GP 1600V 100A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 1600 V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: -	Stock42
N1467NC260	IXYS	SCR 2.6KV 2912A W11 Voltage - Off State: 2.6 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.69 V Current - On State (It (AV)) (Max): 1467 A Current - On State (It (RMS)) (Max): 2912 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 23600A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W11	Package: -	Request a Quote
W3842MC280	IXYS	DIODE GEN PURP 2.8KV 3842A W54 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2800 V Current - Average Rectified (Io): 3842A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 µs Current - Reverse Leakage @ Vr: 50 mA @ 2800 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote
N2418ZD300	IXYS	SCR 3KV W46 Voltage - Off State: 3 kV Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 2418 A Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W46	Package: -	Request a Quote
N4340TJ180	IXYS	SCR 1.8KV 8545A W81 Voltage - Off State: 1.8 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 2.12 V Current - On State (It (AV)) (Max): 4340 A Current - On State (It (RMS)) (Max): 8545 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60500A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W81	Package: -	Request a Quote
DNA30EM2200PZ-TRL	IXYS	DIODE GEN PURP 2.2KV 30A TO263AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 2200 V Capacitance @ Vr, F: 7pF @ 700V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock1,824