IXYS Products

IGBT 600V 75A 300W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
• Power - Max: 300W
• Switching Energy: 400µJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 18ns/130ns
• Test Condition: 400V, 30A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

IGBT 3000V 27A 114W I4-PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 27A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 5.5V @ 15V, 75A
• Power - Max: 114W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 75nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5 (3 leads)
• Supplier Device Package: ISOPLUS i4-PAC?

IGBT 600V 223A 625W SMPD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 223A
• Current - Collector Pulsed (Icm): 1000A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
• Power - Max: 625W
• Switching Energy: 2.85mJ (on), 2.9mJ (off)
• Input Type: Standard
• Gate Charge: 315nC
• Td (on/off) @ 25°C: 48ns/160ns
• Test Condition: 360V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-PowerSMD, 21 Leads
• Supplier Device Package: SMPD

IGBT 1200V 70A 350W TO264AA

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
• Power - Max: 350W
• Switching Energy: 3.8mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 50ns/180ns
• Test Condition: 960V, 35A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXGK)

MOD IGBT BUCK 1200V ECO-PAC2

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Power - Max: 130W
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A
• Current - Collector Cutoff (Max): 900µA
• Input Capacitance (Cies) @ Vce: 1nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

MOSFET N-CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: Die
• Package / Case: Die

MOSFET N-CH 85V 110A ISOPLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS220?
• Package / Case: ISOPLUS220?

MOSFET N-CH 1000V 22A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 700W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 11A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

MOSFET N-CH 300V 88A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

MOSFET N-CH 200V 74A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

MOSFET N-CH 850V 14A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 850V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

MOSFET N-CH 500V 6A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 96nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

THYRISTOR PHASE 2500V I4-PAC

• Voltage - Off State: 2500V
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: Standard Recovery
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5 (3 leads)
• Supplier Device Package: ISOPLUS i4-PAC?

DIODE MODULE 2.2KV 883A

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200V
• Current - Average Rectified (Io) (per Diode): 883A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18µs
• Current - Reverse Leakage @ Vr: 50mA @ 2200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

DIODE ARRAY GP 600V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 2.37V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

DIODE ARRAY GP 1200V 10A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Current - Reverse Leakage @ Vr: 60µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

DIODE ARRAY SCHOTTKY 45V TO263

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 45V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)

DIODE MODULE 1.8KV 60A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 2.01V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 230ns
• Current - Reverse Leakage @ Vr: 200µA @ 1800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

IC LED DRVR RGLTR DIM 1.9A 8TDFN

• Type: DC DC Regulator
• Topology: Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: -
• Current - Output / Channel: 1.9A (Switch)
• Frequency: 1MHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-TDFN (2x3)

RECTIFIER 1200V 100A TO-268AA

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1.2 kV
• Current - Average Rectified (Io): 100 A
• Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 100 A
• Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA (D3Pak-HV)

DIODE GEN PURP 1.8KV 10A TO263HV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
• Capacitance @ Vr, F: 4pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV
• Operating Temperature - Junction: -55°C ~ 175°C

DISC IGBT PT-MID FREQUENCY TO-22

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 48 A
• Current - Collector Pulsed (Icm): 280 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
• Power - Max: 300 W
• Switching Energy: 840µJ (on), 660µJ (off)
• Input Type: Standard
• Gate Charge: 115 nC
• Td (on/off) @ 25°C: 22ns/130ns
• Test Condition: 480V, 30A, 5Ohm, 15V
• Reverse Recovery Time (trr): 25 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

IGBT PT 650V 110A TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 110 A
• Current - Collector Pulsed (Icm): 215 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 455 W
• Switching Energy: 1.6mJ (on), 420µJ (off)
• Input Type: Standard
• Gate Charge: 68 nC
• Td (on/off) @ 25°C: 20ns/100ns
• Test Condition: 400V, 40A, 5Ohm, 15V
• Reverse Recovery Time (trr): 62 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)

MOSFET N-CH 700V 12A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Isolated Tab
• Package / Case: TO-220-3 Full Pack, Isolated Tab

MOSFET N-CH 75V 90A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

MOSFET N-CH 150V 42A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

DISCMOSFET N-CH STD-HIVOLTAGE TO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 170W (Tc)
• Rds On (Max) @ Id, Vgs: 9.2Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

DIODE SCHOTTKY 60V 10A TO220ABFP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4 mA @ 60 V
• Capacitance @ Vr, F: 149pF @ 12V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220ABFP
• Operating Temperature - Junction: -55°C ~ 150°C