Page 28 - IXYS Products | Heisener Electronics

IXGP90N33TCM-A
IXYS

IGBT 330V 40A TO-220AB

Package: TO-220-3

Stock5,408
IXSH45N120
IXYS

IGBT 1200V 75A 300W TO247AD

Package: TO-247-3

Stock4,528
IXGH24N60C
IXYS

IGBT 600V 48A 150W TO247AD

Package: TO-247-3

Stock103,464
IXYP10N65C3D1
IXYS

IGBT 650V 30A 160W TO-220

Package: TO-220-3

Stock7,600
IXBA14N300HV
IXYS

REVERSE CONDUCTING IGBT

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,480
IXFV52N30P
IXYS

MOSFET N-CH 300V 52A PLUS220

Package: TO-220-3, Short Tab

Stock7,184
IXFH10N90
IXYS

MOSFET N-CH 900V 10A TO-247AD

Package: TO-247-3

Stock4,704
MKE38P600LB-TRR
IXYS

MOSFET N-CH 600V 50A SMPD

Package: 9-SMD Module

Stock5,712
IXFR120N20
IXYS

MOSFET N-CH 200V 105A ISOPLUS247

Package: ISOPLUS247?

Stock6,048
IXFX200N10P
IXYS

MOSFET N-CH 100V 200A PLUS247

Package: TO-247-3

Stock6,096
IXTR90P10P
IXYS

MOSFET P-CH 100V 57A ISOPLUS247

Package: ISOPLUS247?

Stock2,544
IXFK98N50P3
IXYS

MOSFET N-CH 500V 98A TO264

Package: TO-264-3, TO-264AA

Stock6,560
IXTY1R4N60P
IXYS

MOSFET N-CH 600V 1.4A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock20,388
IXFH24N50
IXYS

MOSFET N-CH 500V 24A TO-247AD

Package: TO-247-3

Stock4,032
IXFN360N15T2
IXYS

MOSFET N-CH 150V 310A SOT227

Package: SOT-227-4, miniBLOC

Stock19,572
IXZ316N60
IXYS

RF MOSFET N-CHANNEL DE375

Package: 6-SMD, Flat Lead Exposed Pad

Stock5,424
VWO80-08IO7
IXYS

MODULE AC CTLR 3PH 800V PWS-F

Package: Module

Stock2,624
VKF55-08IO7
IXYS

RECT BRIDGE 1PH 800V FO-T-A

Package: FO-T-A

Stock2,896
MCD56-12IO1B
IXYS

MOD THYRISTOR/DIO 1200V TO-240AA

Package: TO-240AA

Stock7,632
DSI30-16AS-TUB
IXYS

DIODE GEN PURP 1.6KV 30A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,096

Part Number	Manufacturer	Description	Package	Stock
IXGP90N33TCM-A	IXYS	IGBT 330V 40A TO-220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock5,408
IXSH45N120	IXYS	IGBT 1200V 75A 300W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A Power - Max: 300W Switching Energy: 21mJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 80ns/400ns Test Condition: 960V, 45A, 2.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXSH)	Package: TO-247-3	Stock4,528
IXGH24N60C	IXYS	IGBT 600V 48A 150W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Power - Max: 150W Switching Energy: 240µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 15ns/75ns Test Condition: 480V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock103,464
IXYP10N65C3D1	IXYS	IGBT 650V 30A 160W TO-220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 160W Switching Energy: 240µJ (on), 110µJ (off) Input Type: Standard Gate Charge: 18nC Td (on/off) @ 25°C: 20ns/77ns Test Condition: 400V, 10A, 50 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock7,600
IXBA14N300HV	IXYS	REVERSE CONDUCTING IGBT IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 38A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A Power - Max: 200W Switching Energy: - Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 40ns/166ns Test Condition: 960V, 14A, 20 Ohm, 15V Reverse Recovery Time (trr): 1.4µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,480
IXFV52N30P	IXYS	MOSFET N-CH 300V 52A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock7,184
IXFH10N90	IXYS	MOSFET N-CH 900V 10A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,704
MKE38P600LB-TRR	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD?.B Package / Case: 9-SMD Module	Package: 9-SMD Module	Stock5,712
IXFR120N20	IXYS	MOSFET N-CH 200V 105A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock6,048
IXFX200N10P	IXYS	MOSFET N-CH 100V 200A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,096
IXTR90P10P	IXYS	MOSFET P-CH 100V 57A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,544
IXFK98N50P3	IXYS	MOSFET N-CH 500V 98A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1300W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,560
IXTY1R4N60P	IXYS	MOSFET N-CH 600V 1.4A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock20,388
IXFH24N50	IXYS	MOSFET N-CH 500V 24A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,032
IXFN360N15T2	IXYS	MOSFET N-CH 150V 310A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 310A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1070W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock19,572
IXZ316N60	IXYS	RF MOSFET N-CHANNEL DE375 Transistor Type: N-Channel Frequency: - Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 600V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: -	Package: 6-SMD, Flat Lead Exposed Pad	Stock5,424
VWO80-08IO7	IXYS	MODULE AC CTLR 3PH 800V PWS-F Structure: 3-Phase Controller - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 37A Current - On State (It (RMS)) (Max): 59A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1100A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	Package: Module	Stock2,624
VKF55-08IO7	IXYS	RECT BRIDGE 1PH 800V FO-T-A Structure: Bridge, Single Phase - All SCRs Number of SCRs, Diodes: 4 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 53A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A	Package: FO-T-A	Stock2,896
MCD56-12IO1B	IXYS	MOD THYRISTOR/DIO 1200V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 64A Current - On State (It (RMS)) (Max): 100A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	Package: TO-240AA	Stock7,632
DSI30-16AS-TUB	IXYS	DIODE GEN PURP 1.6KV 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 1600V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,096
DSSK70-0015B	IXYS	DIODE ARRAY SCHOTTKY 15V TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io) (per Diode): 35A Voltage - Forward (Vf) (Max) @ If: 450mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 15V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	Package: TO-3P-3 Full Pack	Stock9,300
DSP8-08S-TUBE	IXYS	DIODE ARRAY GP 800V 11A TO263 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io) (per Diode): 11A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,624
DSS2X61-01A	IXYS	DIODE MODULE 100V 60A SOT227B Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 910mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 100V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: SOT-227-4, miniBLOC	Stock4,160
IXDD514SIA	IXYS	IC GATE DRIVER 14A 8-SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 1V, 2.5V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,648
IXDD504SIAT/R	IXYS	IC GATE DRIVER 4A 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 9ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	Stock6,480
IXCY20M45	IXYS	IC CURRENT REGULATOR DPAK Function: Current Regulator Sensing Method: - Accuracy: - Voltage - Input: - Current - Output: 20mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,040
IXYH40N65B3D1	IXYS	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 86 A Current - Collector Pulsed (Icm): 195 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 300 W Switching Energy: 800µJ (on), 1.25mJ (off) Input Type: Standard Gate Charge: 68 nC Td (on/off) @ 25°C: 20ns/140ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 37 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	Package: -	Request a Quote
IXTA4N150HV-TRL	IXYS	MOSFET N-CH 1500V 4A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote