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IXYS |
IGBT 1200V 220A 400W SMPD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 220A
- Current - Collector Pulsed (Icm): 700A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Power - Max: 400W
- Switching Energy: 10mJ (on), 33mJ (off)
- Input Type: Standard
- Gate Charge: 420nC
- Td (on/off) @ 25°C: 40ns/490ns
- Test Condition: 960V, 100A, 1 Ohm, 15V
- Reverse Recovery Time (trr): 700ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: SMPD
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Package: 24-PowerSMD, 21 Leads |
Stock3,536 |
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IXYS |
IGBT 1600V 7A 70W I4PAC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1600V
- Current - Collector (Ic) (Max): 7A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A
- Power - Max: 70W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 34nC
- Td (on/off) @ 25°C: -
- Test Condition: 960V, 5A, 27 Ohm, 10V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 (3 leads) |
Stock6,704 |
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IXYS |
IGBT 2500V 235A PLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500V
- Current - Collector (Ic) (Max): 95A
- Current - Collector Pulsed (Icm): 235A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
- Power - Max: 937W
- Switching Energy: 8.3mJ (on), 7.3mJ (off)
- Input Type: Standard
- Gate Charge: 147nC
- Td (on/off) @ 25°C: 15ns/230ns
- Test Condition: 1250V, 25A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 220ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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Package: TO-247-3 |
Stock7,536 |
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IXYS |
IGBT 3000V 130A 625W PLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 130A
- Current - Collector Pulsed (Icm): 600A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
- Power - Max: 625W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 335nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.9µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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Package: TO-247-3 |
Stock6,160 |
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IXYS |
MOSFET N-CH 60V 80A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,240 |
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IXYS |
MOSFET N-CH 500V 32A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock423,384 |
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IXYS |
MOSFET N-CH 1000V 10A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock2,336 |
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IXYS |
MOSFET N-CH 1000V 20A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 660W (Tc)
- Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock7,248 |
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IXYS |
MOSFET N-CH 600V 15A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock5,712 |
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IXYS |
MOSFET N-CH 300V 36A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,520 |
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IXYS |
MOSFET N-CH 40V 120A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock438,240 |
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IXYS |
MOSFET N-CH 600V 47A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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Package: ISOPLUS247? |
Stock6,608 |
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IXYS |
MOSFET N-CH 600V 10A D2-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,256 |
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IXYS |
SCR THRYRISTOR 1200V WC-501
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-501
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Package: WC-501 |
Stock6,208 |
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IXYS |
MOD THYRISTOR DUAL 1400V Y2-DCB
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 320A
- Current - On State (It (RMS)) (Max): 500A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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Package: Module |
Stock6,896 |
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IXYS |
RECT BRIDGE HALF 1200V PWS-E1
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
- Number of SCRs, Diodes: 2 SCRs, 2 Diodes
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): 89A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
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Package: PWS-E1 |
Stock5,600 |
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IXYS |
MOD THYRISTOR/DIO 1600V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 116A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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Package: TO-240AA |
Stock7,776 |
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IXYS |
BRIDGE RECT 3 PHASE 1200V 175A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 175A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
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Package: PWS-E1 |
Stock3,232 |
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IXYS |
DIODE BRIDGE 31A 1600V AVAL FO-A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
- Current - Reverse Leakage @ Vr: 300µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, FO-A
- Supplier Device Package: FO-A
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Package: 4-Square, FO-A |
Stock6,576 |
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IXYS |
RECT BRIDGE 18A 1400V FO-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
- Current - Reverse Leakage @ Vr: 300µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 5-Square, FO-B
- Supplier Device Package: FO-B
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Package: 5-Square, FO-B |
Stock6,832 |
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IXYS |
IC PWM CTRL BUS DIGITAL 18DIP
- Applications: PWM Motor Controller
- Interface: Microprocessor
- Voltage - Supply: 4.5 V ~ 5.5 V
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-DIP
- Mounting Type: Through Hole
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Package: 18-DIP (0.300", 7.62mm) |
Stock31,584 |
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IXYS |
MOSFET N-CH 200V 72A TO263AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA (IXFA)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock456 |
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IXYS |
SCR 1.6KV 63A ISO247
- Voltage - Off State: 1.6 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 50 mA
- Voltage - On State (Vtm) (Max): 1.23 V
- Current - On State (It (AV)) (Max): 40 A
- Current - On State (It (RMS)) (Max): 63 A
- Current - Hold (Ih) (Max): 100 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
- SCR Type: Standard Recovery
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISO247
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Package: - |
Stock30 |
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IXYS |
MOD SCR THYRISTOR 1600V
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 550 A
- Current - On State (It (RMS)) (Max): 1318 A
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A, 19800A
- Current - Hold (Ih) (Max): 1 A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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Package: - |
Request a Quote |
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IXYS |
SCR 1.6KV 79A TO247
- Voltage - Off State: 1.6 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 50 mA
- Voltage - On State (Vtm) (Max): 1.3 V
- Current - On State (It (AV)) (Max): 50 A
- Current - On State (It (RMS)) (Max): 79 A
- Current - Hold (Ih) (Max): 100 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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Package: - |
Stock132 |
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IXYS |
MOSFET N-CH 100V 64A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock1,173 |
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IXYS |
MOSFET N-CH 200V 90A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.6KV 10A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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