Page 216 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

SPP35N10
Infineon Technologies

MOSFET N-CH 100V 35A TO-220AB

Package: TO-220-3

Stock450,732
IPI04N03LA
Infineon Technologies

MOSFET N-CH 25V 80A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,560
SPU09P06PL
Infineon Technologies

MOSFET P-CH 60V 9.7A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,776
SPI100N03S2L-03
Infineon Technologies

MOSFET N-CH 30V 100A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,216
IRF7492
Infineon Technologies

MOSFET N-CH 200V 3.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock89,760
IRF7492TR
Infineon Technologies

MOSFET N-CH 200V 3.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock205,224
IRLR8113TR
Infineon Technologies

MOSFET N-CH 30V 94A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,784
IRLR8113
Infineon Technologies

MOSFET N-CH 30V 94A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,752
IRLR7833TRR
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,344
IRLR7833TRL
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock54,456
IRLR7833TR
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock56,952
IRFR3707Z
Infineon Technologies

MOSFET N-CH 30V 56A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,544
IRF7821TR
Infineon Technologies

MOSFET N-CH 30V 13.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock221,688
IRLU7821
Infineon Technologies

MOSFET N-CH 30V 65A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock9,120
IRF2804
Infineon Technologies

MOSFET N-CH 40V 75A TO-220AB

Package: TO-220-3

Stock17,208
IRF1302S
Infineon Technologies

MOSFET N-CH 20V 174A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock628,512
IRF3000
Infineon Technologies

MOSFET N-CH 300V 1.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock18,276
IRFU3410
Infineon Technologies

MOSFET N-CH 100V 31A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock15,960
IRFBA1405P
Infineon Technologies

MOSFET N-CH 55V 174A SUPER-220

Package: Super-220?-3 (Straight Leads)

Stock6,800
BTS282Z E3180A
Infineon Technologies

MOSFET N-CH 49V 80A TO-220-7

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock65,076

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP35N10	Infineon Technologies	MOSFET N-CH 100V 35A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock450,732	MOSFET (Metal Oxide)	100V	35A (Tc)	10V	4V @ 83µA	65nC @ 10V	1570pF @ 25V	±20V	-	150W (Tc)	44 mOhm @ 26.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPI04N03LA	Infineon Technologies	MOSFET N-CH 25V 80A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3877pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,560	MOSFET (Metal Oxide)	25V	80A (Tc)	4.5V, 10V	2V @ 60µA	32nC @ 5V	3877pF @ 15V	±20V	-	107W (Tc)	4.2 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
SPU09P06PL	Infineon Technologies	MOSFET P-CH 60V 9.7A TO-251 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,776	MOSFET (Metal Oxide)	60V	9.7A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 10V	450pF @ 25V	±20V	-	42W (Tc)	250 mOhm @ 6.8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
SPI100N03S2L-03	Infineon Technologies	MOSFET N-CH 30V 100A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,216	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	2V @ 250µA	220nC @ 10V	8180pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7492	Infineon Technologies	MOSFET N-CH 200V 3.7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock89,760	MOSFET (Metal Oxide)	200V	3.7A (Ta)	10V	2.5V @ 250µA	59nC @ 10V	1820pF @ 25V	±20V	-	2.5W (Ta)	79 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7492TR	Infineon Technologies	MOSFET N-CH 200V 3.7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock205,224	MOSFET (Metal Oxide)	200V	3.7A (Ta)	10V	2.5V @ 250µA	59nC @ 10V	1820pF @ 25V	±20V	-	2.5W (Ta)	79 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLR8113TR	Infineon Technologies	MOSFET N-CH 30V 94A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,784	MOSFET (Metal Oxide)	30V	94A (Tc)	4.5V, 10V	2.25V @ 250µA	32nC @ 4.5V	2920pF @ 15V	±20V	-	89W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8113	Infineon Technologies	MOSFET N-CH 30V 94A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,752	MOSFET (Metal Oxide)	30V	94A (Tc)	4.5V, 10V	2.25V @ 250µA	32nC @ 4.5V	2920pF @ 15V	±20V	-	89W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7833TRR	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,344	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	2.3V @ 250µA	50nC @ 4.5V	4010pF @ 15V	±20V	-	140W (Tc)	4.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7833TRL	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock54,456	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	2.3V @ 250µA	50nC @ 4.5V	4010pF @ 15V	±20V	-	140W (Tc)	4.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7833TR	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock56,952	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	2.3V @ 250µA	50nC @ 4.5V	4010pF @ 15V	±20V	-	140W (Tc)	4.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3707Z	Infineon Technologies	MOSFET N-CH 30V 56A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,544	MOSFET (Metal Oxide)	30V	56A (Tc)	4.5V, 10V	2.25V @ 250µA	14nC @ 4.5V	1150pF @ 15V	±20V	-	50W (Tc)	9.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7821TR	Infineon Technologies	MOSFET N-CH 30V 13.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock221,688	MOSFET (Metal Oxide)	30V	13.6A (Ta)	4.5V, 10V	1V @ 250µA	14nC @ 4.5V	1010pF @ 15V	±20V	-	2.5W (Ta)	9.1 mOhm @ 13A, 10V	-55°C ~ 155°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLU7821	Infineon Technologies	MOSFET N-CH 30V 65A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock9,120	MOSFET (Metal Oxide)	30V	65A (Tc)	4.5V, 10V	1V @ 250µA	14nC @ 4.5V	1030pF @ 15V	±20V	-	75W (Tc)	10 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRF2804	Infineon Technologies	MOSFET N-CH 40V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,208	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	240nC @ 10V	6450pF @ 25V	±20V	-	330W (Tc)	2.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1302S	Infineon Technologies	MOSFET N-CH 20V 174A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 104A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock628,512	MOSFET (Metal Oxide)	20V	174A (Tc)	10V	4V @ 250µA	120nC @ 10V	3600pF @ 25V	±20V	-	200W (Tc)	4 mOhm @ 104A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3000	Infineon Technologies	MOSFET N-CH 300V 1.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 400 mOhm @ 960mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock18,276	MOSFET (Metal Oxide)	300V	1.6A (Ta)	10V	5V @ 250µA	33nC @ 10V	730pF @ 25V	±30V	-	2.5W (Ta)	400 mOhm @ 960mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFU3410	Infineon Technologies	MOSFET N-CH 100V 31A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock15,960	MOSFET (Metal Oxide)	100V	31A (Tc)	10V	4V @ 250µA	56nC @ 10V	1690pF @ 25V	±20V	-	3W (Ta), 110W (Tc)	39 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFBA1405P	Infineon Technologies	MOSFET N-CH 55V 174A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 101A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?-3 (Straight Leads)	Package: Super-220?-3 (Straight Leads)	Stock6,800	MOSFET (Metal Oxide)	55V	174A (Tc)	10V	4V @ 250µA	260nC @ 10V	5480pF @ 25V	±20V	-	330W (Tc)	5 mOhm @ 101A, 10V	-40°C ~ 175°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?-3 (Straight Leads)
BTS282Z E3180A	Infineon Technologies	MOSFET N-CH 49V 80A TO-220-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 49V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 36A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO220-7-180 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock65,076	MOSFET (Metal Oxide)	49V	80A (Tc)	4.5V, 10V	2V @ 240µA	232nC @ 10V	4800pF @ 25V	±20V	Temperature Sensing Diode	300W (Tc)	6.5 mOhm @ 36A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	PG-TO220-7-180	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
BTS121ANKSA1	Infineon Technologies	MOSFET N-CH 100V 22A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,016	MOSFET (Metal Oxide)	100V	22A (Tc)	4.5V	2.5V @ 1mA	-	1500pF @ 25V	±10V	-	95W (Tc)	100 mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
BTS115ANKSA1	Infineon Technologies	MOSFET N-CH 50V 15.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,720	MOSFET (Metal Oxide)	50V	15.5A (Tc)	4.5V	2.5V @ 1mA	-	735pF @ 25V	±10V	-	50W (Tc)	120 mOhm @ 7.8A, 4.5V	-55°C ~ 150°C (TJ)	Through Hole	P-TO220AB	TO-220-3
IRFL4315	Infineon Technologies	MOSFET N-CH 150V 2.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock180,000	MOSFET (Metal Oxide)	150V	2.6A (Ta)	10V	5V @ 250µA	19nC @ 10V	420pF @ 25V	±30V	-	2.8W (Ta)	185 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRF6607	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock202,884	MOSFET (Metal Oxide)	30V	27A (Ta), 94A (Tc)	4.5V, 7V	2V @ 250µA	75nC @ 4.5V	6930pF @ 15V	±12V	-	3.6W (Ta), 42W (Tc)	3.3 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
94-3250	Infineon Technologies	MOSFET N-CH 30V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 12A, 7V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MQ Package / Case: DirectFET? Isometric MQ	Package: DirectFET? Isometric MQ	Stock4,656	MOSFET (Metal Oxide)	30V	12A (Ta), 49A (Tc)	4.5V, 7V	2.1V @ 250µA	26nC @ 4.5V	2270pF @ 15V	±12V	-	2.3W (Ta), 42W (Tc)	11.5 mOhm @ 12A, 7V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MQ	DirectFET? Isometric MQ
IRF6603	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V Vgs (Max): +20V, -12V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock150,372	MOSFET (Metal Oxide)	30V	27A (Ta), 92A (Tc)	4.5V, 10V	2.5V @ 250µA	72nC @ 4.5V	6590pF @ 15V	+20V, -12V	-	3.6W (Ta), 42W (Tc)	3.4 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
IRF6602	Infineon Technologies	MOSFET N-CH 20V 11A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MQ Package / Case: DirectFET? Isometric MQ	Package: DirectFET? Isometric MQ	Stock9,120	MOSFET (Metal Oxide)	20V	11A (Ta), 48A (Tc)	4.5V, 10V	2.3V @ 250µA	18nC @ 4.5V	1420pF @ 10V	±20V	-	2.3W (Ta), 42W (Tc)	13 mOhm @ 11A, 10V	-	Surface Mount	DIRECTFET? MQ	DirectFET? Isometric MQ
IRF6601	Infineon Technologies	MOSFET N-CH 20V 26A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 26A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock19,008	MOSFET (Metal Oxide)	20V	26A (Ta), 85A (Tc)	4.5V, 10V	2.2V @ 250µA	45nC @ 4.5V	3440pF @ 15V	±20V	-	3.6W (Ta), 42W (Tc)	3.8 mOhm @ 26A, 10V	-	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT