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Infineon Technologies |
MOSFET N-CH 55V 100A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,440 |
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MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 5110pF @ 25V | ±20V | - | 300W (Tc) | 4.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,696 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 230nC @ 10V | 6000pF @ 25V | ±20V | - | 300W (Tc) | 3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,512 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 250µA | 172nC @ 10V | 5300pF @ 25V | ±20V | - | 300W (Tc) | 3.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 85V 95A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6690pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,368 |
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MOSFET (Metal Oxide) | 85V | 95A (Tc) | 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | ±20V | - | 167W (Tc) | 8.2 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 95A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,208 |
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MOSFET (Metal Oxide) | 100V | 95A (Tc) | 10V | 4V @ 130µA | 100nC @ 10V | 6660pF @ 50V | ±20V | - | 167W (Tc) | 8.2 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock19,704 |
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MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | ±20V | - | 214W (Tc) | 6.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock11,496 |
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MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | ±20V | - | 300W (Tc) | 5.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 6.1A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 220µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,840 |
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MOSFET (Metal Oxide) | 600V | 6.1A (Tc) | 10V | 3.5V @ 220µA | 27nC @ 10V | 550pF @ 100V | ±20V | - | 28W (Tc) | 600 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 6.8A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,840 |
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MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | ±20V | - | 30W (Tc) | 520 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 60V 150MA SOT-323
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19.1pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock108,000 |
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MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19.1pF @ 25V | ±20V | - | 300mW (Ta) | 8 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET P-CH 60V 170MA SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,464 |
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MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19pF @ 25V | ±20V | - | 360mW (Ta) | 8 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,728 |
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MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.3V @ 26µA | 1.5nC @ 10V | 56pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 55V 540MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 2.7µA
- Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,264 |
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MOSFET (Metal Oxide) | 55V | 540mA (Ta) | 4.5V, 10V | 2V @ 2.7µA | 2.26nC @ 10V | 75pF @ 25V | ±20V | - | 360mW (Ta) | 650 mOhm @ 270mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 1.4A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,248 |
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MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4.5V, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 94pF @ 15V | ±20V | - | 500mW (Ta) | 160 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 2A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,136 |
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MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 2V @ 11µA | 5nC @ 10V | 500pF @ 15V | ±20V | - | 500mW (Ta) | 80 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 2.3A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,064 |
|
MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 4.5V, 10V | 2V @ 11µA | 1.5nC @ 5V | 275pF @ 15V | ±20V | - | 500mW (Ta) | 57 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 1.5A SOT-323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323-3
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock5,280 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | ±12V | - | 500mW (Ta) | 140 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 20V 1.5A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,240 |
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MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | ±12V | - | 500mW (Ta) | 140 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 580MA SOT-323
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
- Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock36,000 |
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MOSFET (Metal Oxide) | 20V | 580mA (Ta) | 2.5V, 4.5V | 1.2V @ 3.5µA | 1.38nC @ 4.5V | 89.9pF @ 15V | ±12V | - | 300mW (Ta) | 550 mOhm @ 580mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V
- Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,416 |
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MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 0V, 10V | 1.8V @ 50µA | 2.8nC @ 7V | 68pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 44pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,152 |
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MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 2.4V @ 26µA | 2.9nC @ 5V | 44pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 3.5 Ohm @ 160mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 250V 100MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,328 |
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MOSFET (Metal Oxide) | 250V | 100mA (Ta) | 0V, 10V | 1V @ 56µA | 3.5nC @ 5V | 76pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 14 Ohm @ 0.1mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 250V 100MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,528 |
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MOSFET (Metal Oxide) | 250V | 100mA (Ta) | 0V, 10V | 1V @ 56µA | 3.5nC @ 5V | 76pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 14 Ohm @ 0.1mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 280MA SOT-323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock3,840 |
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MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 4.5V, 10V | 1.4V @ 26µA | 1.5nC @ 10V | 43pF @ 25V | ±20V | - | 500mW (Ta) | 3.5 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 60V 280MA SOT-323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock3,056 |
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MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 4.5V, 10V | 1.4V @ 26µA | 1.5nC @ 10V | 43pF @ 25V | ±20V | - | 500mW (Ta) | 3.5 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,432 |
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MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 1.4V @ 250µA | 1.4nC @ 10V | 41pF @ 25V | ±20V | - | 360mW (Ta) | 3.5 Ohm @ 230mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,904 |
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MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 4.5V, 10V | 2.6V @ 8µA | 1nC @ 10V | 28pF @ 25V | ±20V | - | 500mW (Ta) | 500 Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,264 |
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MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 1.6V @ 8µA | 2.1nC @ 5V | 28pF @ 25V | ±20V | Depletion Mode | 500mW (Ta) | 500 Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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