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Infineon Technologies |
IGBT 600V 6.8A 25W TO220FP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 6.8A
- Current - Collector Pulsed (Icm): 27A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
- Power - Max: 25W
- Switching Energy: 140µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 15nC
- Td (on/off) @ 25°C: 40ns/87ns
- Test Condition: 480V, 5A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 28ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220AB Full-Pak
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Package: TO-220-3 Full Pack |
Stock4,336 |
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Infineon Technologies |
MOSFET N-CH WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock6,384 |
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Infineon Technologies |
MOSFET P-CH 20V 1.7A MICRO8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock96,000 |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 294W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,936 |
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Infineon Technologies |
MOSFET P-CH 150V 13A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,928 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 28µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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Package: 8-PowerVDFN |
Stock4,096 |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SCD80-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 120mA
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 30V
- Capacitance @ Vr, F: 6pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-80
- Supplier Device Package: PG-SCD80-2
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-80 |
Stock4,640 |
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Infineon Technologies |
IC REG LINEAR 3.3V/5V P-DSO-12-6
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 2
- Voltage - Input (Max): 42V
- Voltage - Output (Min/Fixed): 3.3V, 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 300mA, 180mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 265µA ~ 20mA
- PSRR: 65dB (100Hz), 60dB (100Hz)
- Control Features: Inhibit, Reset, Watchdog
- Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
- Supplier Device Package: P-DSO-12-6
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Package: 12-BSOP (0.295", 7.50mm Width) Exposed Pad |
Stock6,912 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 12 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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Package: 14-DIP (0.300", 7.62mm) |
Stock5,488 |
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Infineon Technologies |
DRIVER IC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 1.2V, 1.9V
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,160 |
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Infineon Technologies |
IC TUNER SIL PRTBL 65WFSGA
- Type: Tuner
- Applications: Mobile Phones, Cellular, Video Displays
- Mounting Type: Surface Mount
- Package / Case: 65-WFBGA
- Supplier Device Package: PG-WFSGA-65
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Package: 65-WFBGA |
Stock3,712 |
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Infineon Technologies |
IC SWITCH ETHER 5PORT 128-FQFP
- Protocol: Ethernet
- Function: Switch
- Interface: Parallel
- Standards: 10/100 Base-T/TX PHY
- Voltage - Supply: 2.8 V ~ 3.465 V
- Current - Supply: -
- Operating Temperature: 0°C ~ 115°C
- Package / Case: 128-BFQFP
- Supplier Device Package: P-FQFP-128
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Package: 128-BFQFP |
Stock13,668 |
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Infineon Technologies |
IC MCU 8BIT 24KB FLASH 64TQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: CAN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 24KB (24K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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Package: 64-LQFP |
Stock2,672 |
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Infineon Technologies |
IC MCU 16BIT 64KB FLASH 100TQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: CAN, EBI/EMI, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 79
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 6K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: -
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,352 |
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Infineon Technologies |
IC MCU 16BIT 576KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 576KB (576K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 50K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
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Package: 100-LQFP Exposed Pad |
Stock21,360 |
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Infineon Technologies |
IC ANLG ABSOLUTE PRES SNSR DSOF8
- Pressure Type: -
- Operating Pressure: -
- Output Type: -
- Output: -
- Accuracy: -
- Voltage - Supply: -
- Port Size: -
- Port Style: -
- Features: -
- Termination Style: -
- Maximum Pressure: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock8,406 |
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Infineon Technologies |
IC PWR SWITCH LOW SIDE DPAK
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,528 |
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Infineon Technologies |
IC PWR SW HI-SIDE
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,880 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 29ns/266ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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Infineon Technologies |
TRENCH 40<-<100V PG-HSOF-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 148µA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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Package: - |
Stock3,783 |
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Infineon Technologies |
FRAM
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 160KB FLASH 48QFN
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 72MHz
- Connectivity: CSIO, I2C, LINbus, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 35
- Program Memory Size: 160KB (160K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 14x12b SAR; D/A 2x10b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC SW PROGR CURR SENS D2PAK
- Switch Type: -
- Number of Outputs: 1
- Ratio - Input:Output: -
- Output Configuration: High Side
- Output Type: -
- Interface: -
- Voltage - Load: 6V ~ 32V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): 23A
- Rds On (Typ): 5.5mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 150°C
- Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2PAK (SMD-220 5-Lead)
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Package: - |
Request a Quote |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 2380A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 2380A
- Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: -
- Operating Temperature - Junction: 0°C ~ 140°C
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH FS 650V 50A TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
- Power - Max: 273 W
- Switching Energy: 1.2mJ (on), 850µJ (off)
- Input Type: Standard
- Gate Charge: 290 nC
- Td (on/off) @ 25°C: 26ns/350ns
- Test Condition: 400V, 50A, 9Ohm, 15V
- Reverse Recovery Time (trr): 93 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: - |
Stock276 |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 64TQFP
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
- Number of I/O: 54
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 20x12b SAR
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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Package: - |
Request a Quote |
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