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Infineon Technologies |
MOSFET N-CH 500V 3.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock462,972 |
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Infineon Technologies |
MOSFET N-CH 30V 20A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1797pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (3x3)
- Package / Case: 8-VQFN Exposed Pad
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Package: 8-VQFN Exposed Pad |
Stock6,320 |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,032 |
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Infineon Technologies |
MOSFET N-CH 30V 105A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,304 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,112 |
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Infineon Technologies |
MOSFET N-CH BARE DIE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,392 |
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Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,304 |
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Infineon Technologies |
MOSFET N-CH 600V 1.7A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 18.1W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,640 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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Package: 8-PowerVDFN |
Stock2,752 |
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Infineon Technologies |
MOSFET 2P-CH 20V 2.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,536 |
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Infineon Technologies |
TRANS NPN 45V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 500mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock294,510 |
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Infineon Technologies |
DIODE ARRAY GP 80V 200MA SC75
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 150nA @ 70V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
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Package: SC-75, SOT-416 |
Stock4,000 |
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Infineon Technologies |
IC REG CTRLR BUCK 48MLPQ
- Output Type: Transistor Driver
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Number of Outputs: 3
- Output Phases: 3
- Voltage - Supply (Vcc/Vdd): 8 V ~ 16 V
- Frequency - Switching: 200kHz
- Duty Cycle (Max): 100%
- Synchronous Rectifier: Yes
- Clock Sync: No
- Serial Interfaces: -
- Control Features: Enable, Frequency Control, Power Good, Soft Start
- Operating Temperature: 0°C ~ 150°C (TJ)
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-MLPQ (7x7)
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Package: 48-VFQFN Exposed Pad |
Stock45,660 |
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Infineon Technologies |
IC MOTOR CONTROLLER PAR 36DSO
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (3)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: -
- Applications: Automotive
- Current - Output: -
- Voltage - Supply: 5.5 V ~ 32 V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36-38
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Package: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad |
Stock6,496 |
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Infineon Technologies |
IC DVR 3PHASE SOFT TURN 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 12 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock15,696 |
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Infineon Technologies |
IC PCI TO ETHERNET LAN 128QFP
- Protocol: Ethernet
- Function: Controller
- Interface: PCI
- Standards: IEEE 802.3, 10/100 Base-T/TX PHY
- Voltage - Supply: 3 V ~ 3.6 V
- Current - Supply: 150mA
- Operating Temperature: 0°C ~ 70°C
- Package / Case: 128-BFQFP
- Supplier Device Package: PG-PQFP-128
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Package: 128-BFQFP |
Stock15,840 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 100TQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: EBI/EMI, I2C, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 3K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 4x10b
- Oscillator Type: Internal
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,632 |
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Infineon Technologies |
IC PWR SWITCH 62V HISIDE TO252-5
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,384 |
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Infineon Technologies |
MOSFET N-CH 650V 47A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 415W (Tc)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
Stock5,139 |
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Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC TRUETOUCH CAPSENSE
- Applications: Touchscreen Controller
- Core Processor: M8C
- Program Memory Type: FLASH (8kB)
- Controller Series: CY8CT
- RAM Size: 512 x 8
- Interface: I2C, SPI, UART
- Number of I/O: -
- Voltage - Supply: 2.4V ~ 5.25V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 56-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package: 56-SSOP
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Package: - |
Request a Quote |
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Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C, SPI
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 512MBIT SPI 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mbit
- Memory Interface: SPI
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Stock429 |
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Infineon Technologies |
IC MCU 32BIT 256KB FLASH 68QFN
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 150MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
- Number of I/O: 52
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x12b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-VFQFN Exposed Pad
- Supplier Device Package: 68-QFN (8x8)
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Package: - |
Request a Quote |
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Infineon Technologies |
LEGACY 16-BIT MCU
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 59
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: OTP
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
- Data Converters: A/D 8x10b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-QFP
- Supplier Device Package: PG-MQFP-80-7
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 288KB FLASH 48LQFP
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 72MHz
- Connectivity: CSIO, I2C, LINbus, UART/USART, USB
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 35
- Program Memory Size: 288KB (288K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 14x12b SAR; D/A 2x10b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LQFP
- Supplier Device Package: 48-LQFP (7x7)
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Package: - |
Request a Quote |
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Infineon Technologies |
MOD DIODE THYRISTOR
- Structure: -
- Number of SCRs, Diodes: -
- Voltage - Off State: -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH MEMORY NOR
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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