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Infineon Technologies |
MOSFET N-CH 650V 0.4A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock1,059,192 |
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Infineon Technologies |
MOSFET N-CH 100V 9.7A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,376 |
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Infineon Technologies |
MOSFET N-CH 550V TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 660µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,608 |
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Infineon Technologies |
MOSFET N-CH 30V 140A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock15,732 |
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Infineon Technologies |
MOSFET N-CH 100V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock358,584 |
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Infineon Technologies |
MOSFET NCH 600V 9.9A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.4A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock19,752 |
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Infineon Technologies |
MOSFET N CH 40V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3183pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 70A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock38,640 |
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Infineon Technologies |
TRANS PNP 45V 0.5A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,952 |
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Infineon Technologies |
TRANS RF NPN 43GHZ 4.7V SOT343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 43GHz
- Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
- Gain: 11dB ~ 30.5dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
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Package: SC-82A, SOT-343 |
Stock4,464 |
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Infineon Technologies |
IC REG LINEAR 8.5V 400MA TO220-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 8.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 200µA ~ 25mA
- PSRR: 54dB (100Hz)
- Control Features: Inhibit
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-5
- Supplier Device Package: P-TO220-5
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Package: TO-220-5 |
Stock6,688 |
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Infineon Technologies |
IC LED DRIVER OFFLINE 8SOIC
- Type: AC DC Offline Switcher
- Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
- Internal Switch(s): No
- Number of Outputs: 1
- Voltage - Supply (Min): 11.5V
- Voltage - Supply (Max): 18V
- Voltage - Output: -
- Current - Output / Channel: -
- Frequency: -
- Dimming: -
- Applications: -
- Operating Temperature: -25°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,040 |
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Infineon Technologies |
IC DUAL MOSFET IGBT 8SO
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 6 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 2.3A, 3.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 15ns, 10ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,400 |
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Infineon Technologies |
IC MCU 16BIT 384KB FLASH 144LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 119
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: 144-LQFP (20x20)
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Package: 144-LQFP Exposed Pad |
Stock6,080 |
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Infineon Technologies |
IC RELAY PHOTOVO 300V 50MA 8-DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 160 Ohm
- Load Current: 50mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 300 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
- Supplier Device Package: 8-DIP Modified
- Relay Type: Relay
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Package: 8-DIP (0.300", 7.62mm), 4 Leads |
Stock16,560 |
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Infineon Technologies |
IC PWR SW SMART HISIDE TO252-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5.5 V ~ 20 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 5.5A
- Rds On (Typ): 16 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: PG-TO252-5-11
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Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock39,480 |
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Infineon Technologies |
INDUSTRIAL MCUS
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 250MHz
- Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
- Number of I/O: 207
- Program Memory Size: 4.063MB (4.063M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 256K x 8
- RAM Size: 768K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 72x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 272-LFBGA
- Supplier Device Package: 272-BGA (16x16)
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Package: - |
Request a Quote |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
HIGH POWER_NEW
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
LEGACY 16-BIT FLASH MCU
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: ASC, SPI, SSC, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 47
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
- Data Converters: A/D 14x8/10b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: PG-LQFP-64-4
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Package: - |
Request a Quote |
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Infineon Technologies |
THYR / DIODE MODULE DK
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.8 kV
- Current - On State (It (AV)) (Max): 566 A
- Current - On State (It (RMS)) (Max): 1050 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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Package: - |
Stock9 |
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Infineon Technologies |
IC MCU 32BIT 16MB FLASH 292LFBGA
- Core Processor: TriCore™
- Core Size: 32-Bit 6-Core
- Speed: 300MHz
- Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
- Peripherals: DMA, I2S, LVDS, PWM, WDT
- Number of I/O: -
- Program Memory Size: 16MB (16M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 1M x 8
- RAM Size: 6.75M x 8
- Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
- Data Converters: A/D 76 SAR, Sigma-Delta
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 292-LFBGA
- Supplier Device Package: PG-LFBGA-292-10
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 2GBIT CFI 64FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 2Gbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 110 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (13x11)
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Package: - |
Request a Quote |
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Infineon Technologies |
PNOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 128Mbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT TRENCH FS 650V 96A TO263-7
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 326 W
- Switching Energy: 0.12mJ (on), 0.09mJ (off)
- Input Type: Standard
- Gate Charge: 108 nC
- Td (on/off) @ 25°C: 16.8ns/136ns
- Test Condition: 400V, 25A, 9Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Supplier Device Package: PG-TO263-7-U04
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Package: - |
Stock201 |
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Infineon Technologies |
IC TRANSCEIVER HALF 2/2 DSO-14
- Type: Transceiver
- Protocol: CANbus
- Number of Drivers/Receivers: 2/2
- Duplex: Half
- Receiver Hysteresis: 50 mV
- Data Rate: 5Mbps
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-14
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Package: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 8.5 kV
- Current - On State (It (AV)) (Max): 3330 A
- Current - On State (It (RMS)) (Max): 3600 A
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
- Current - Hold (Ih) (Max): 100 mA
- Operating Temperature: 120°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-200AF
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Package: - |
Request a Quote |
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Infineon Technologies |
MULTI-MARKET MCUS
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 80MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 80
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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Package: - |
Stock2,700 |
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Infineon Technologies |
TRENCH 40<-<100V PG-HSOF-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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Package: - |
Request a Quote |
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