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Infineon Technologies |
IGBT 1200V ULTRA FAST DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,320 |
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Infineon Technologies |
IGBT 650V 30A FAST DIODE TO247-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 62A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 188W
- Switching Energy: 560µJ (on), 320µJ (off)
- Input Type: Standard
- Gate Charge: 70nC
- Td (on/off) @ 25°C: 17ns/124ns
- Test Condition: 400V, 30A, 13 Ohm, 15V
- Reverse Recovery Time (trr): 75ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Package: TO-247-3 |
Stock9,420 |
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Infineon Technologies |
IGBT 600V 100A 330W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 100A
- Current - Collector Pulsed (Icm): 144A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
- Power - Max: 330W
- Switching Energy: 625µJ (on), 1.28mJ (off)
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 60ns/145ns
- Test Condition: 400V, 48A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 115ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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Package: TO-247-3 |
Stock4,368 |
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Infineon Technologies |
IGBT 600V 20A 110W TO263-3
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 30A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
- Power - Max: 110W
- Switching Energy: 430µJ
- Input Type: Standard
- Gate Charge: 62nC
- Td (on/off) @ 25°C: 12ns/215ns
- Test Condition: 400V, 10A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock25,548 |
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Infineon Technologies |
MOSFET P-CH 55V 31A TO-262
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock76,560 |
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Infineon Technologies |
RFP-LDMOS GOLDMOS 8
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,576 |
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Infineon Technologies |
IFPS MODULES
- Type: IGBT
- Configuration: 3 Phase
- Current: 10A
- Voltage: 600V
- Voltage - Isolation: 2000Vrms
- Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
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Package: 24-PowerDIP Module (1.028", 26.10mm) |
Stock3,280 |
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Infineon Technologies |
DIODE ARRAY SCHOTTKY 30V SOT23
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,744 |
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Infineon Technologies |
IC SBC MULTI-CAN 48VQFN
- Applications: -
- Voltage - Input: -
- Number of Outputs: -
- Voltage - Output: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,496 |
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Infineon Technologies |
IC REG LINEAR 200MA 14DSO
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 165°C
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-14
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock4,016 |
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Infineon Technologies |
IC PWR SW HI-SIDE 2CH TSON10
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 4.5 V ~ 42 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 250mA
- Rds On (Typ): 2.5 Ohm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Over Temperature, UVLO
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: 10-TFDFN Exposed Pad
- Supplier Device Package: PG-TSON-10
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Package: 10-TFDFN Exposed Pad |
Stock6,624 |
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Infineon Technologies |
IC DRIVER GATE 40A PQFN
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters, Voltage Regulators
- Interface: PWM
- Load Type: Inductive
- Technology: Power MOSFET
- Rds On (Typ): -
- Current - Output / Channel: 40A
- Current - Peak Output: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 4.5 V ~ 17 V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Features: Bootstrap Circuit, Status Flag
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 25-PowerVFQFN
- Supplier Device Package: 25-PQFN (4x6)
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Package: 25-PowerVFQFN |
Stock36,000 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 100TQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: EBI/EMI, I2C, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 3K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
- Data Converters: A/D 4x10b
- Oscillator Type: Internal
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,808 |
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Infineon Technologies |
MOSFET N-CH 25V 12A/40A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Package: - |
Stock164,676 |
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Infineon Technologies |
MEDIUM POWER ECONO
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONOD
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Package: - |
Stock30 |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 40V 36A/180A 2WDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 544KB FLASH 120LQFP
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 160MHz
- Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 100
- Program Memory Size: 544KB (544K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 64K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 24x12b; D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 120-LQFP
- Supplier Device Package: 120-LQFP (16x16)
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Package: - |
Stock2,520 |
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Infineon Technologies |
SMALL SIGNAL N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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Infineon Technologies |
LOW POWER EASY
- Diode Type: -
- Technology: -
- Voltage - Peak Reverse (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock24 |
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Infineon Technologies |
IGBT TRENCH FS 650V 74A TO263-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 74 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 250 W
- Switching Energy: 1.1mJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 20ns/157ns
- Test Condition: 400V, 40A, 15Ohm, 15V
- Reverse Recovery Time (trr): 78 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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Package: - |
Stock4,086 |
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Infineon Technologies |
INTELLIGENT POWER MODULE
- Type: -
- Configuration: -
- Current: -
- Voltage: -
- Voltage - Isolation: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C, SPI
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: - |
Request a Quote |
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Infineon Technologies |
USB Low-Speed Peripherals
- Applications: USB Microcontroller
- Core Processor: M8C
- Program Memory Type: FLASH (8kB)
- Controller Series: CY7C638xx
- RAM Size: 256 x 8
- Interface: I2C, SPI, UART, USB
- Number of I/O: 20
- Voltage - Supply: 4V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 277.8W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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Infineon Technologies |
DIODE GEN PURP 1.8KV 171A PB34-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 171A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB34-1
- Operating Temperature - Junction: -40°C ~ 135°C
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 32KB FLASH 28SSOP
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit Single-Core
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 20
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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Package: - |
Stock2,805 |
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