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Micron Technology Inc. |
IC FLASH 1GBIT 25NS 63VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (10.5x13)
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Package: 63-VFBGA |
Stock5,312 |
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FLASH | FLASH - NAND | 1Gb (64M x 16) | Parallel | - | - | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (10.5x13) |
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Maxim Integrated |
IC EEPROM 896BIT 1WIRE SOT23-3
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 896b (112 x 8)
- Memory Interface: 1-Wire?
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 2µs
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,064 |
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EEPROM | EEPROM | 896b (112 x 8) | 1-Wire? | - | - | 2µs | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Micron Technology Inc. |
IC FLASH/LPDRAM 3GBIT 137TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH, RAM
- Technology: FLASH - NAND, Mobile LPDRAM
- Memory Size: 2Gb (256M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 137-TFBGA
- Supplier Device Package: 137-TFBGA (10.5x13)
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Package: 137-TFBGA |
Stock7,408 |
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FLASH, RAM | FLASH - NAND, Mobile LPDRAM | 2Gb (256M x 8)(NAND), 1Gb (32M x 32)(LPDRAM) | Parallel | 200MHz | - | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 137-TFBGA | 137-TFBGA (10.5x13) |
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Micron Technology Inc. |
IC FLASH 32MBIT 70NS 88TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 32Mb (2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -30°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 88-TFBGA
- Supplier Device Package: 88-TFBGA (8x10)
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Package: 88-TFBGA |
Stock7,472 |
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FLASH | FLASH | 32Mb (2M x 16) | Parallel | - | - | 70ns | 1.7 V ~ 1.95 V | -30°C ~ 85°C (TA) | Surface Mount | 88-TFBGA | 88-TFBGA (8x10) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,024 |
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DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 166MHz | - | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Cypress Semiconductor Corp |
IC NVSRAM 1MBIT 35NS 48SSOP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package: 48-SSOP
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Package: 48-BSSOP (0.295", 7.50mm Width) |
Stock5,648 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 35ns | 35ns | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 48-BSSOP (0.295", 7.50mm Width) | 48-SSOP |
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STMicroelectronics |
IC OTP 4MBIT 120NS 44PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead)
- Supplier Device Package: 44-PLCC (16.51x16.51)
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Package: 44-LCC (J-Lead) |
Stock13,956 |
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EPROM | EPROM - OTP | 4Mb (256K x 16) | Parallel | - | - | 120ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 44-LCC (J-Lead) | 44-PLCC (16.51x16.51) |
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Microchip Technology |
IC EEPROM 1MBIT 250NS 32FLATPACK
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 250ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-CFlatpack
- Supplier Device Package: 32-Flatpack, Ceramic Bottom-Brazed
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Package: 32-CFlatpack |
Stock4,784 |
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EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 250ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TC) | Surface Mount | 32-CFlatpack | 32-Flatpack, Ceramic Bottom-Brazed |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 576MBIT 933MHZ 168BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (16M x 36)
- Memory Interface: Parallel
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 168-LBGA
- Supplier Device Package: 168-FC(LF)BGA (13.5x13.5)
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Package: 168-LBGA |
Stock7,936 |
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DRAM | DRAM | 576Mb (16M x 36) | Parallel | 933MHz | - | 8ns | 1.28 V ~ 1.42 V | 0°C ~ 70°C (TA) | Surface Mount | 168-LBGA | 168-FC(LF)BGA (13.5x13.5) |
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Maxim Integrated |
IC NVSRAM 2MBIT 70NS 32EDIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 32-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 32-EDIP
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Package: 32-DIP Module (0.600", 15.24mm) |
Stock7,728 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 2Mb (256K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 32-DIP Module (0.600", 15.24mm) | 32-EDIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 512KBIT 15NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 512Kb (32K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,776 |
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SRAM | SRAM - Dual Port, Asynchronous | 512Kb (32K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 64KBIT 20NS 28CDIP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-CDIP (0.300", 7.62mm)
- Supplier Device Package: 28-CDIP
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Package: 28-CDIP (0.300", 7.62mm) |
Stock7,936 |
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SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.300", 7.62mm) | 28-CDIP |
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Micron Technology Inc. |
SPI FLASH NOR SLC 512MX4 TBGA QD
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Gb (256M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 8ms, 2.8ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,184 |
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FLASH | FLASH - NOR | 2Gb (256M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,952 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 1.7 V ~ 2 V | -40°C ~ 105°C (TA) | - | - | - |
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Micron Technology Inc. |
SERIAL NOR SLC 2MX4 SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,152 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | SPI | 108MHz | 8ms, 5ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | - | - | - |
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Microchip Technology |
IC EEPROM 2KBIT 400KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 400ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock2,928 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 1MHz | 5ms | 400ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Rohm Semiconductor |
IC EEPROM 2KBIT 400KHZ 8SOP-J
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP-J
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,288 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP-J |
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Microchip Technology |
IC FLASH 4M SPI 40MHZ
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 4Mb (512K x 8)
- Memory Interface: SPI
- Clock Frequency: 40MHz
- Write Cycle Time - Word, Page: 1ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,856 |
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FLASH | FLASH | 4Mb (512K x 8) | SPI | 40MHz | 1ms | - | 1.65 V ~ 1.95 V | -40°C ~ 85°C (TA) | - | - | - |
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Micron Technology Inc. |
IC DRAM 64G 1866MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 64Gb (1G x 64)
- Memory Interface: -
- Clock Frequency: 1866MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,392 |
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DRAM | SDRAM - Mobile LPDDR4 | 64Gb (1G x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Microchip Technology |
1KB I2C EEPROM 1MHZ 1.7-5.5V 8-T
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I²C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 450ns
- Voltage - Supply: 1.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock5,680 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I²C | 1MHz | 5ms | 450ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
1KB I2C EEPROM 1MHZ 1.7-5.5V 5-S
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I²C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 450ns
- Voltage - Supply: 1.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SOT-23-5
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Package: SC-74A, SOT-753 |
Stock2,528 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I²C | 1MHz | 5ms | 450ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | SC-74A, SOT-753 | SOT-23-5 |
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Insignis Technology Corporation |
DDR3L 2GB X16 FBGA 7.5X13(X1.0)
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-VFBGA
- Supplier Device Package: 96-FBGA (7.5x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3L | 2Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-VFBGA | 96-FBGA (7.5x13) |
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Everspin Technologies Inc. |
IC RAM 8MBIT PARALLEL 48FBGA
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LFBGA
- Supplier Device Package: 48-FBGA (10x10)
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Package: - |
Request a Quote |
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RAM | MRAM (Magnetoresistive RAM) | 8Mbit | Parallel | - | 35ns | 35 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-LFBGA | 48-FBGA (10x10) |
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GSI Technology Inc. |
IC SRAM 144MBIT PAR 260BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Quad Port, Synchronous
- Memory Size: 144Mbit
- Memory Interface: Parallel
- Clock Frequency: 625 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.2V ~ 1.35V
- Operating Temperature: -40°C ~ 100°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 260-BGA
- Supplier Device Package: 260-BGA (22x14)
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Package: - |
Request a Quote |
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SRAM | SRAM - Quad Port, Synchronous | 144Mbit | Parallel | 625 MHz | - | - | 1.2V ~ 1.35V | -40°C ~ 100°C (TJ) | Surface Mount | 260-BGA | 260-BGA (22x14) |
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ISSI, Integrated Silicon Solution Inc |
512M, 1.8V, DDR2, 64Mx8, 400Mhz
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mbit
- Memory Interface: SSTL_18
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR2 | 512Mbit | SSTL_18 | 400 MHz | 15ns | 400 ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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Macronix |
IC FLASH 512MBIT SPI/QUAD 16SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 30µs, 1.5ms
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOP
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 512Mbit | SPI - Quad I/O, QPI | 104 MHz | 30µs, 1.5ms | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP |
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Renesas Electronics Corporation |
IC SRAM 16MBIT PARALLEL 48TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (8x9.5)
|
Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 16Mbit | Parallel | - | 45ns | 45 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (8x9.5) |
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Micron Technology Inc. |
IC DRAM 16GBIT PARALLEL 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 16Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR4 | 16Gbit | Parallel | 1.6 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13) |