|
|
Micron Technology Inc. |
IC FLASH 128GBIT 152VBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock6,992 |
|
FLASH | FLASH - NAND | 128Gb (16G x 8) | Parallel | 166MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 133MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,632 |
|
DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 133MHz | - | 5.5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16MBIT 50NS 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,424 |
|
DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
Renesas Electronics America |
IC SRAM 256KBIT 70NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP
|
Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock4,480 |
|
SRAM | SRAM | 256Kb (32K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
|
|
Micron Technology Inc. |
IC SDRAM 64MBIT 167MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (2M x 32)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
|
Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock14,868 |
|
DRAM | SDRAM | 64Mb (2M x 32) | Parallel | 167MHz | 12ns | 5.5ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ON Semiconductor |
IC FLASH 2MBIT 120NS 32DIP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 120ns
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 32-DIP (0.600", 15.24mm)
- Supplier Device Package: 32-PDIP
|
Package: 32-DIP (0.600", 15.24mm) |
Stock4,352 |
|
FLASH | FLASH | 2Mb (256K x 8) | Parallel | - | 120ns | 120ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 32-DIP (0.600", 15.24mm) | 32-PDIP |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 7.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
|
Package: 100-LQFP |
Stock6,816 |
|
SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
Cypress Semiconductor Corp |
IC SRAM 4MBIT 70NS 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.400", 10.16mm Width)
- Supplier Device Package: 32-TSOP II
|
Package: 32-SOIC (0.400", 10.16mm Width) |
Stock4,800 |
|
SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.400", 10.16mm Width) | 32-TSOP II |
|
|
Micron Technology Inc. |
IC PSRAM 64MBIT 70NS 48VFBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
|
Package: 48-VFBGA |
Stock7,568 |
|
PSRAM | PSRAM (Pseudo SRAM) | 64Mb (4M x 16) | Parallel | - | 70ns | 70ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
|
|
Microchip Technology |
IC EEPROM 64KBIT 70NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
|
Package: 32-LCC (J-Lead) |
Stock5,344 |
|
EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 10ms | 70ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
|
|
Cypress Semiconductor Corp |
IC SRAM 72MBIT 200MHZ 100LQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 72Mb (2M x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
|
Package: 100-LQFP |
Stock7,040 |
|
SRAM | SRAM - Synchronous | 72Mb (2M x 36) | Parallel | 200MHz | - | 3ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
Micron Technology Inc. |
IC RLDRAM 576MBIT 933MHZ 168FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (32M x 18)
- Memory Interface: Parallel
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-TBGA
- Supplier Device Package: 168-BGA
|
Package: 168-TBGA |
Stock4,240 |
|
DRAM | DRAM | 576Mb (32M x 18) | Parallel | 933MHz | - | 8ns | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | Surface Mount | 168-TBGA | 168-BGA |
|
|
Adesto Technologies |
IC FLASH 8-SOIC-N IND TEMP 2.3V
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 5µs, 5ms
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,616 |
|
FLASH | FLASH | 8Mb (1M x 8) | SPI | 104MHz | 5µs, 5ms | - | 2.3 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC EEPROM 1KBIT 2MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (64 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock17,160 |
|
EEPROM | EEPROM | 1Kb (64 x 16) | SPI | 2MHz | 2ms | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC EEPROM 2KBIT 400KHZ 8UDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN-EP (2x3)
|
Package: 8-UFDFN Exposed Pad |
Stock5,088 |
|
EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN-EP (2x3) |
|
|
SII Semiconductor Corporation |
IC EEPROM 2KBIT 2MHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (128 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 8ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
- Supplier Device Package: 8-TMSOP
|
Package: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width) |
Stock4,992 |
|
EEPROM | EEPROM | 2Kb (128 x 16) | SPI | 2MHz | 8ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WSSOP, 8-MSOP (0.110", 2.80mm Width) | 8-TMSOP |
|
|
Maxim Integrated |
IC NVSRAM 256KBIT 70NS 28EDIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 28-EDIP
|
Package: 28-DIP Module (0.600", 15.24mm) |
Stock8,988 |
|
NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
|
|
ON Semiconductor |
IC EEPROM 1K SPI 250KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (64 x 16)
- Memory Interface: SPI
- Clock Frequency: 250kHz
- Write Cycle Time - Word, Page: 15ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock3,360 |
|
EEPROM | EEPROM | 1Kb (64 x 16) | SPI | 250kHz | 15ms | - | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
Cypress Semiconductor Corp |
IC FLASH 64M PARALLEL 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8, 4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 90ns
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (13x11)
|
Package: 64-LBGA |
Stock2,032 |
|
FLASH | FLASH - NOR | 64Mb (8M x 8, 4M x 16) | Parallel | - | 90ns | 90ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
Micron Technology Inc. |
LPDDR4 64G 2GX32 FBGA 8DP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,776 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 8K PARALLEL 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kb (1K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
|
Package: 52-LCC (J-Lead) |
Stock5,328 |
|
SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 100ns | 100ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
|
|
GigaDevice Semiconductor (HK) Limited |
IC FLASH 64MBIT SPI/QUAD 8SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 140µs, 4ms
- Access Time: 7 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 64Mbit | SPI - Quad I/O | 133 MHz | 140µs, 4ms | 7 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOP |
|
|
Kingston Technology |
EMMC 5.1 (HS400) 153B 16GB
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 16Gbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.8V, 3.3V
- Operating Temperature: -25°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 153-FBGA
- Supplier Device Package: 153-FBGA (11.5x13)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NAND | 16Gbit | eMMC | - | - | - | 1.8V, 3.3V | -25°C ~ 85°C | Surface Mount | 153-FBGA | 153-FBGA (11.5x13) |
|
|
Renesas Electronics Corporation |
IC RAM 8MBIT SPI 54MHZ 8DFN
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 8Mbit
- Memory Interface: SPI
- Clock Frequency: 54 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.71V ~ 2V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x6)
|
Package: - |
Request a Quote |
|
RAM | MRAM (Magnetoresistive RAM) | 8Mbit | SPI | 54 MHz | - | - | 1.71V ~ 2V | -40°C ~ 85°C | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (5x6) |
|
|
Cypress Semiconductor Corp |
IC SRAM 1MBIT PARALLEL 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.465", 11.80mm Width)
- Supplier Device Package: 32-TSOP
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 1Mbit | Parallel | - | 55ns | 55 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 32-TFSOP (0.465", 11.80mm Width) | 32-TSOP |
|
|
Micron Technology Inc. |
IC FLASH 16MBIT 55NS 80PQFP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 2.5V ~ 3.3V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-BQFP
- Supplier Device Package: 80-PQFP (14x20)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR | 16Mbit | Parallel | - | 55ns | 55 ns | 2.5V ~ 3.3V | -40°C ~ 125°C (TA) | Surface Mount | 80-BQFP | 80-PQFP (14x20) |
|
|
Galvantech |
IC SRAM 4MBIT 90MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mbit
- Memory Interface: -
- Clock Frequency: 90 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 3.3V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 100-TQFP
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
SRAM | SRAM | 4Mbit | - | 90 MHz | - | 8 ns | 3.3V | 0°C ~ 70°C | Surface Mount | 100-TQFP | - |
|
|
Micron Technology Inc. |
DDR4 16G 1GX16 FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 16Gbit
- Memory Interface: POD
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x13)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - DDR4 | 16Gbit | POD | 1.6 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13) |