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Cypress Semiconductor Corp |
IC FLASH 2GBIT 130NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Gb (256M x 8, 128M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 130ns
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (11x13)
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Package: 64-LBGA |
Stock6,384 |
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FLASH | FLASH - NOR | 2Gb (256M x 8, 128M x 16) | Parallel | - | - | 130ns | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (11x13) |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 65NS 100FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 256Kb (16K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 65ns
- Access Time: 65ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-TFBGA
- Supplier Device Package: 100-CABGA (6x6)
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Package: 100-TFBGA |
Stock5,808 |
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SRAM | SRAM - Dual Port, Asynchronous | 256Kb (16K x 16) | Parallel | - | 65ns | 65ns | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 100-TFBGA | 100-CABGA (6x6) |
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Micron Technology Inc. |
IC SDRAM 64MBIT 167MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (8M x 8)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock2,064 |
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DRAM | SDRAM | 64Mb (8M x 8) | Parallel | 167MHz | 12ns | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ON Semiconductor |
IC EEPROM 1KBIT 10MHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
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Package: 8-WFDFN Exposed Pad |
Stock5,920 |
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EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 10MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 133MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,320 |
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SRAM | SRAM - Synchronous ZBT | 4.5Mb (256K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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STMicroelectronics |
IC OTP 4MBIT 70NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC (11.35x13.89)
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Package: 32-LCC (J-Lead) |
Stock7,472 |
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EPROM | EPROM - OTP | 4Mb (512K x 8) | Parallel | - | - | 70ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (11.35x13.89) |
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Micron Technology Inc. |
IC SDRAM 512MBIT 266MHZ 60FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 267MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 500ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-FBGA
- Supplier Device Package: 60-FBGA
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Package: 60-FBGA |
Stock6,400 |
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DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 267MHz | 15ns | 500ps | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | Surface Mount | 60-FBGA | 60-FBGA |
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IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 70NS 84PGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (8K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 84-BPGA
- Supplier Device Package: 84-PGA (27.94x27.94)
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Package: 84-BPGA |
Stock7,408 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |
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IDT, Integrated Device Technology Inc |
IC SRAM 64KBIT 25NS 84PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kb (4K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-LCC (J-Lead)
- Supplier Device Package: 84-PLCC (29.21x29.21)
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Package: 84-LCC (J-Lead) |
Stock3,312 |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 84-LCC (J-Lead) | 84-PLCC (29.21x29.21) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT 7.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4Mb (128K x 32)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock5,520 |
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SRAM | SRAM - Synchronous | 4Mb (128K x 32) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.465 V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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Cypress Semiconductor Corp |
IC SRAM 128KBIT 65NS 100VFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, MoBL
- Memory Size: 128Kb (8K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 65ns
- Access Time: 65ns
- Voltage - Supply: 1.8 V ~ 3.3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-VFBGA
- Supplier Device Package: 100-VFBGA (6x6)
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Package: 100-VFBGA |
Stock23,928 |
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SRAM | SRAM - Dual Port, MoBL | 128Kb (8K x 16) | Parallel | - | 65ns | 65ns | 1.8 V ~ 3.3 V | -40°C ~ 85°C (TA) | Surface Mount | 100-VFBGA | 100-VFBGA (6x6) |
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Micron Technology Inc. |
IC SDRAM 256MBIT 200MHZ 60FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-FBGA (8x12.5)
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Package: 60-TFBGA |
Stock6,880 |
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DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
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Micron Technology Inc. |
IC FLASH 2GBIT 63VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (9x11)
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Package: 63-VFBGA |
Stock12,240 |
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FLASH | FLASH - NAND | 2Gb (256M x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Macronix |
IC FLASH 8MBIT 90NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 90ns
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock16,704 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | Parallel | - | 90ns | 90ns | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 2MBIT 55NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock15,228 |
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SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 55ns | 55ns | 2.5 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Rohm Semiconductor |
IC FRAM 256KBIT 70NS 28TSOP
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 150ns
- Access Time: 70ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock28,446 |
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FRAM | FRAM (Ferroelectric RAM) | 256Kb (32K x 8) | Parallel | - | 150ns | 70ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
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ON Semiconductor |
IC EEPROM 32KBIT 10MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock46,896 |
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EEPROM | EEPROM | 32Kb (4K x 8) | SPI | 10MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC 64 MB FLASH MEMORY
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,200 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
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Package: 60-TFBGA |
Stock2,224 |
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DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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Microchip Technology |
16K 2KX8 1.8V SERIAL EE
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I²C
- Clock Frequency: 100kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 3.5µs
- Voltage - Supply: 1.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x3)
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Package: 8-VFDFN Exposed Pad |
Stock3,216 |
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EEPROM | EEPROM | 16Kb (2K x 8) | I²C | 100kHz | 5ms | 3.5µs | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (2x3) |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT PARALLEL 32SOIC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.445", 11.30mm Width)
- Supplier Device Package: 32-SOIC
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 1Mbit | Parallel | - | 70ns | 70 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 32-SOIC (0.445", 11.30mm Width) | 32-SOIC |
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Winbond Electronics |
1GB LPDDR4X, X16, 1600MHZ, -40C~
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 1Gbit
- Memory Interface: LVSTL_06
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.6 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 100-VFBGA
- Supplier Device Package: 100-VFBGA (10x7.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4X | 1Gbit | LVSTL_06 | 1.6 GHz | 18ns | 3.6 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 100-VFBGA | 100-VFBGA (10x7.5) |
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Alliance Memory, Inc. |
IC DRAM 2GBIT PAR 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-VFBGA
- Supplier Device Package: 96-FBGA (7.5x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3 | 2Gbit | Parallel | 1.066 GHz | 15ns | 20 ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-VFBGA | 96-FBGA (7.5x13) |
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Micron Technology Inc. |
GDDR6 16GBIT 32 180/252 TFBGA 2
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SGRAM - GDDR6
- Memory Size: 16Gbit
- Memory Interface: POD_135
- Clock Frequency: 9 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.3095V ~ 1.391V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 180-TFBGA
- Supplier Device Package: 180-FBGA (12x14)
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Package: - |
Request a Quote |
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DRAM | SGRAM - GDDR6 | 16Gbit | POD_135 | 9 GHz | - | - | 1.3095V ~ 1.391V | 0°C ~ 95°C (TC) | Surface Mount | 180-TFBGA | 180-FBGA (12x14) |
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National Semiconductor |
IC EPROM 2MBIT PARALLEL 32TSOP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - UV
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 200 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: - |
Request a Quote |
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EPROM | EPROM - UV | 2Mbit | Parallel | - | - | 200 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Silicon Motion, Inc. |
IC FLASH 128GBIT EMMC 100BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 128Gbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-BGA (14x18)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (TLC) | 128Gbit | eMMC | - | - | - | - | -40°C ~ 85°C | Surface Mount | 100-LBGA | 100-BGA (14x18) |
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Infineon Technologies |
INFINEON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: HyperFlash
- Memory Size: 128Mbit
- Memory Interface: HyperBus
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 96 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-VFBGA (6x8)
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Package: - |
Request a Quote |
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FLASH | HyperFlash | 128Mbit | HyperBus | 166 MHz | - | 96 ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 24-VBGA | 24-VFBGA (6x8) |
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Everspin Technologies Inc. |
IC RAM 8MBIT PARALLEL 54TSOP2
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 45 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP2
|
Package: - |
Request a Quote |
|
RAM | MRAM (Magnetoresistive RAM) | 8Mbit | Parallel | - | 35ns | 45 ns | 3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP2 |
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