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Micron Technology Inc. |
IC FLASH 128MBIT 96NS 64EASYBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 96ns
- Access Time: 96ns
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 64-TBGA
- Supplier Device Package: 64-EasyBGA (8x10)
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Package: 64-TBGA |
Stock2,416 |
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FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | 133MHz | 96ns | 96ns | 1.7 V ~ 2 V | -30°C ~ 85°C (TC) | Surface Mount | 64-TBGA | 64-EasyBGA (8x10) |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 600MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 600MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock7,104 |
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SRAM | SRAM - Synchronous, DDR II | 36Mb (1M x 36) | Parallel | 600MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Micron Technology Inc. |
IC FLASH/LPDRAM 3GBIT 130VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH, RAM
- Technology: FLASH - NAND, Mobile LPDRAM
- Memory Size: 2Gb (256M x 8)(NAND), 1Gb (64M x 16)(LPDRAM)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 130-VFBGA
- Supplier Device Package: 130-VFBGA (8x9)
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Package: 130-VFBGA |
Stock5,024 |
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FLASH, RAM | FLASH - NAND, Mobile LPDRAM | 2Gb (256M x 8)(NAND), 1Gb (64M x 16)(LPDRAM) | Parallel | 200MHz | - | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 130-VFBGA | 130-VFBGA (8x9) |
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ON Semiconductor |
IC SRAM 2MBIT 85NS 48BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.65 V ~ 2.2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LFBGA
- Supplier Device Package: 48-BGA (6x8)
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Package: 48-LFBGA |
Stock5,808 |
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SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 70ns | 70ns | 1.65 V ~ 2.2 V | -40°C ~ 85°C (TA) | Surface Mount | 48-LFBGA | 48-BGA (6x8) |
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Micron Technology Inc. |
IC SDRAM 64MBIT 100MHZ 54VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 7ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (8x8)
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Package: 54-VFBGA |
Stock2,784 |
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DRAM | SDRAM - Mobile LPSDR | 64Mb (4M x 16) | Parallel | 104MHz | 15ns | 7ns | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 54-VFBGA | 54-VFBGA (8x8) |
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Micron Technology Inc. |
IC FLASH 4MBIT 90NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 90ns
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC (11.35x13.89)
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Package: 32-LCC (J-Lead) |
Stock5,536 |
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FLASH | FLASH - NOR | 4Mb (512K x 8) | Parallel | - | 90ns | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (11.35x13.89) |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 35NS 68PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: 68-LCC (J-Lead) |
Stock2,016 |
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SRAM | SRAM - Dual Port, Asynchronous | 256Kb (32K x 8) | Parallel | - | 35ns | 35ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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IDT, Integrated Device Technology Inc |
IC SRAM 18MBIT 150MHZ 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 150MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.8ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BGA |
Stock2,240 |
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SRAM | SRAM - Synchronous ZBT | 18Mb (512K x 36) | Parallel | 150MHz | - | 3.8ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology Inc |
IC SRAM 8KBIT 25NS 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kb (1K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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Package: 64-LQFP |
Stock3,696 |
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SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 25ns | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (10x10) |
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Micron Technology Inc. |
IC FLASH 128GBIT 153WFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,104 |
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FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | - | -25°C ~ 85°C (TA) | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 16MBIT 45NS 48BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-BGA (6x8)
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Package: 48-VFBGA |
Stock7,408 |
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SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-BGA (6x8) |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,632 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock2,272 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 2.2 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Cypress Semiconductor Corp |
IC 128MEG FLASH MEMORY
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock7,392 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Alliance Memory, Inc. |
IC SDRAM 128MBIT 166MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 2ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock6,736 |
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DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | 2ns | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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Macronix |
IC FLASH 4MBIT 90NS 48LFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 90ns
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LFBGA, CSPBGA
- Supplier Device Package: 48-LFBGA, CSP (6x8)
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Package: 48-LFBGA, CSPBGA |
Stock2,912 |
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FLASH | FLASH - NOR | 4Mb (512K x 8) | Parallel | - | 90ns | 90ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-LFBGA, CSPBGA | 48-LFBGA, CSP (6x8) |
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Microchip Technology |
IC EEPROM 16KBIT 10MHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
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Package: 8-WFDFN Exposed Pad |
Stock4,416 |
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EEPROM | EEPROM | 16Kb (2K x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
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Microchip Technology |
IC EEPROM 8KBIT 400KHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (256 x 8 x 4)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
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Package: 8-WFDFN Exposed Pad |
Stock24,888 |
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EEPROM | EEPROM | 8Kb (256 x 8 x 4) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 167MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.4ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock4,912 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 167MHz | - | 3.4ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Microchip Technology |
IC EEPROM 32K I2C 1MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: I²C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 450ns
- Voltage - Supply: 1.6 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock12,510 |
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EEPROM | EEPROM | 32Kb (4K x 8) | I²C | 1MHz | 5ms | 450ns | 1.6 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Macronix |
IC FLASH 128MBIT
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,600 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC FLASH 128G MMC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-VFBGA
- Supplier Device Package: 153-VFBGA (11.5x13)
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Package: 153-VFBGA |
Stock5,792 |
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FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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Winbond Electronics |
1GB LPDDR4, X16, 1866MHZ, -40C~1
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 1Gbit
- Memory Interface: LVSTL_11
- Clock Frequency: 1.867 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.6 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4 | 1Gbit | LVSTL_11 | 1.867 GHz | 18ns | 3.6 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
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National Semiconductor |
STANDARD SRAM, 256X1
- Memory Type: Volatile
- Memory Format: RAM
- Technology: RAM
- Memory Size: 256bit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 520 ns
- Voltage - Supply: 3V ~ 15V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CDIP
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Package: - |
Request a Quote |
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RAM | RAM | 256bit | Parallel | - | - | 520 ns | 3V ~ 15V | -55°C ~ 125°C (TA) | Through Hole | 16-CDIP (0.300", 7.62mm) | 16-CDIP |
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Renesas Electronics Corporation |
IC RAM 4MBIT 108MHZ 8DFN
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 4Mbit
- Memory Interface: -
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.71V ~ 2V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x6)
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Package: - |
Request a Quote |
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RAM | MRAM (Magnetoresistive RAM) | 4Mbit | - | 108 MHz | - | - | 1.71V ~ 2V | -40°C ~ 105°C | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (5x6) |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Silicon Motion, Inc. |
IC FLASH 2TBIT EMMC 100BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 2Tbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-BGA (14x18)
|
Package: - |
Request a Quote |
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FLASH | FLASH - NAND (TLC) | 2Tbit | eMMC | - | - | - | - | -25°C ~ 85°C | Surface Mount | 100-LBGA | 100-BGA (14x18) |
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Renesas Electronics Corporation |
IC SRAM 4MBIT PARALLEL 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
|
Package: - |
Request a Quote |
|
SRAM | SRAM | 4Mbit | Parallel | - | 12ns | 12 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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