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Cypress Semiconductor Corp |
IC NVSRAM 1MBIT 40MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 1Mb (128K x 8)
- Memory Interface: SPI
- Clock Frequency: 40MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,816 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | SPI | 40MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Winbond Electronics |
IC SDRAM 16MBIT 166MHZ 50TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 50-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 50-TSOP II
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Package: 50-TSOP (0.400", 10.16mm Width) |
Stock109,536 |
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DRAM | SDRAM | 16Mb (1M x 16) | Parallel | 166MHz | - | 5ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 50-TSOP (0.400", 10.16mm Width) | 50-TSOP II |
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Microchip Technology |
IC OTP 512KBIT 70NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 512Kb (64K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock5,952 |
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EPROM | EPROM - OTP | 512Kb (64K x 8) | Parallel | - | - | 70ns | 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Micron Technology Inc. |
IC SDRAM 256MBIT 125MHZ 90VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 125MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 7ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-VFBGA (8x13)
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Package: 90-VFBGA |
Stock6,576 |
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DRAM | SDRAM - Mobile LPSDR | 256Mb (8M x 32) | Parallel | 125MHz | 15ns | 7ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (8x13) |
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Microchip Technology |
IC FLASH 1MBIT 55NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 50µs
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock4,608 |
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FLASH | FLASH | 1Mb (128K x 8) | Parallel | - | 50µs | 55ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT 12NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock18,384 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Microchip Technology |
IC FLASH 1MBIT 120NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 50µs
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock6,896 |
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FLASH | FLASH | 1Mb (128K x 8) | Parallel | - | 50µs | 120ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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IDT, Integrated Device Technology Inc |
IC SRAM 2.25MBIT 12NS 128TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 2.25Mb (128K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: 128-LQFP |
Stock5,232 |
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SRAM | SRAM - Dual Port, Asynchronous | 2.25Mb (128K x 18) | Parallel | - | 12ns | 12ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 128-LQFP | 128-TQFP (14x20) |
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Micron Technology Inc. |
IC SDRAM 128MBIT 166MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock4,880 |
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DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 167MHz | 12ns | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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Everspin Technologies Inc. |
IC MRAM 1MBIT 40MHZ 8DFN
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 1Mb (128K x 8)
- Memory Interface: SPI
- Clock Frequency: 40MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP, Large Flag (5x6)
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Package: 8-TDFN Exposed Pad |
Stock5,952 |
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RAM | MRAM (Magnetoresistive RAM) | 1Mb (128K x 8) | SPI | 40MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 8-TDFN Exposed Pad | 8-DFN-EP, Large Flag (5x6) |
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Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT 40MHZ 8SOP
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 2Mb (256K x 8)
- Memory Interface: SPI
- Clock Frequency: 25MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.8 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock3,472 |
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FRAM | FRAM (Ferroelectric RAM) | 2Mb (256K x 8) | SPI | 25MHz | - | - | 1.8 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOP |
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Micron Technology Inc. |
IC SDRAM 256MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock5,328 |
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DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Cypress Semiconductor Corp |
IC 128M FLASH MEMORY
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 80MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (6x8)
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Package: 24-TBGA |
Stock4,208 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 80MHz | - | - | 1.7 V ~ 2 V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-BGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 12NS 32SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 32-SOJ
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Package: 32-BSOJ (0.400", 10.16mm Width) |
Stock11,676 |
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SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 12ns | 12ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-BSOJ (0.400", 10.16mm Width) | 32-SOJ |
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Cypress Semiconductor Corp |
IC FLASH 512MBIT 100NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (10x13)
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Package: 64-LBGA |
Stock6,744 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (10x13) |
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Fremont Micro Devices USA |
IC EEPROM 128KBIT 1MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 550ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock3,280 |
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EEPROM | EEPROM | 128Kb (16K x 8) | I2C | 1MHz | 5ms | 550ns | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Winbond Electronics |
IC SDRAM 1GBIT 667MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-WBGA (9x13)
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Package: 96-TFBGA |
Stock15,504 |
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DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 667MHz | - | 20ns | 1.425 V ~ 1.575 V | 0°C ~ 85°C (TC) | Surface Mount | 96-TFBGA | 96-WBGA (9x13) |
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STMicroelectronics |
IC EEPROM 4KBIT 400KHZ TSSOP8
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock31,692 |
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EEPROM | EEPROM | 4Kb (512 x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Cypress Semiconductor Corp |
IC FLASH 2G PARALLEL 48TSOP I
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock5,184 |
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FLASH | FLASH - NAND | 2Gb (128M x 16) | Parallel | - | 25ns | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Cypress Semiconductor Corp |
IC FLASH 32M PARALLEL 80FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (1M x 32)
- Memory Interface: Parallel
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: 60ns
- Access Time: 54ns
- Voltage - Supply: 1.65 V ~ 2.75 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-LBGA
- Supplier Device Package: 80-FBGA (13x11)
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Package: 80-LBGA |
Stock2,272 |
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FLASH | FLASH - NOR | 32Mb (1M x 32) | Parallel | 66MHz | 60ns | 54ns | 1.65 V ~ 2.75 V | -40°C ~ 85°C (TA) | Surface Mount | 80-LBGA | 80-FBGA (13x11) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: 2.6ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock4,272 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 250MHz | - | 2.6ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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Winbond Electronics |
IC FLASH 512MBIT SPI 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mbit
- Memory Interface: SPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 512Mbit | SPI | 133 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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Micron Technology Inc. |
UFS 2T
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 2Tbit
- Memory Interface: UFS 3.1
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 153-WFBGA
- Supplier Device Package: 153-WFBGA (11x13)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 2Tbit | UFS 3.1 | - | - | - | - | -25°C ~ 85°C | Surface Mount | 153-WFBGA | 153-WFBGA (11x13) |
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Microchip Technology |
1MBIT 3.4MHZ I2C SERIAL EEPROM,
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Mbit
- Memory Interface: I2C
- Clock Frequency: 3.4 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 70 ns
- Voltage - Supply: 1.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIJ
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Package: - |
Request a Quote |
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EEPROM | EEPROM | 1Mbit | I2C | 3.4 MHz | 5ms | 70 ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ |
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Micron Technology Inc. |
LPDDR5 32G 1GX32 FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR5
- Memory Size: 32Gbit
- Memory Interface: Parallel
- Clock Frequency: 4.266 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.05V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR5 | 32Gbit | Parallel | 4.266 GHz | - | - | 1.05V | - | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
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Micron Technology Inc. |
DDR5 16GB EUDIMM VFBGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild Semiconductor |
IC EEPROM 4KBIT MICROWIRE 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kbit
- Memory Interface: Microwire
- Clock Frequency: 250 kHz
- Write Cycle Time - Word, Page: 15ms
- Access Time: -
- Voltage - Supply: 2.7V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
EEPROM | EEPROM | 4Kbit | Microwire | 250 kHz | 15ms | - | 2.7V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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GSI Technology Inc. |
IC SRAM 36MBIT PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, Standard
- Memory Size: 36Mbit
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V, 2.3V ~ 2.7V
- Operating Temperature: -40°C ~ 100°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (20x14)
|
Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous, Standard | 36Mbit | Parallel | 333 MHz | - | - | 1.7V ~ 2V, 2.3V ~ 2.7V | -40°C ~ 100°C (TJ) | Surface Mount | 100-LQFP | 100-TQFP (20x14) |