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Adesto Technologies |
IC FLASH 64MBIT 66MHZ 8CASON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 64Mb (1056 Bytes x 8192 pages)
- Memory Interface: SPI
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN
- Supplier Device Package: 8-CASON (6x8)
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Package: 8-VDFN |
Stock5,232 |
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FLASH | FLASH | 64Mb (1056 Bytes x 8192 pages) | SPI | 66MHz | 6ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-VDFN | 8-CASON (6x8) |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT 10NS 48FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-FBGA (7x8.5)
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Package: 48-TFBGA |
Stock4,368 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 48-TFBGA | 48-FBGA (7x8.5) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock4,192 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 18MBIT 167MHZ 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.4ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
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Package: 165-TBGA |
Stock5,408 |
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SRAM | SRAM - Synchronous, DDR II | 18Mb (1M x 18) | Parallel | 167MHz | - | 8.4ns | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 32KBIT 35NS 48DIP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 32Kb (4K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 48-DIP (0.600", 15.24mm)
- Supplier Device Package: 48-PDIP
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Package: 48-DIP (0.600", 15.24mm) |
Stock7,520 |
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SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 48-DIP (0.600", 15.24mm) | 48-PDIP |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 200MHZ 484FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 18Mb (256K x 72)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.3ns
- Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 484-FBGA
- Supplier Device Package: 484-FBGA (23x23)
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Package: 484-FBGA |
Stock5,104 |
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SRAM | SRAM - Dual Port, Synchronous | 18Mb (256K x 72) | Parallel | 200MHz | - | 3.3ns | 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 484-FBGA | 484-FBGA (23x23) |
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Micron Technology Inc. |
IC FLASH 8MBIT 90NS 44SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8, 512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 90ns
- Access Time: 90ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-SOIC (0.496", 12.60mm Width)
- Supplier Device Package: 44-SOP
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Package: 44-SOIC (0.496", 12.60mm Width) |
Stock4,944 |
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FLASH | FLASH - NOR | 8Mb (1M x 8, 512K x 16) | Parallel | - | 90ns | 90ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-SOIC (0.496", 12.60mm Width) | 44-SOP |
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Cypress Semiconductor Corp |
IC SRAM 256KBIT 70NS 28SOIC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock13,440 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Microchip Technology |
IC OTP 8MBIT 90NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 8Mb (1M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock3,296 |
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EPROM | EPROM - OTP | 8Mb (1M x 8) | Parallel | - | - | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Micron Technology Inc. |
IC SDRAM 24GBIT 933MHZ 168WFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR3
- Memory Size: 24Gb (768M x 32)
- Memory Interface: -
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.2V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,288 |
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DRAM | SDRAM - Mobile LPDDR3 | 24Gb (768M x 32) | - | 933MHz | - | - | 1.2V | -30°C ~ 85°C (TC) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 64KBIT 35NS 28CDIP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-CDIP (0.600", 15.24mm)
- Supplier Device Package: 28-CerDip
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Package: 28-CDIP (0.600", 15.24mm) |
Stock3,648 |
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SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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Cypress Semiconductor Corp |
IC SRAM 16MBIT 10NS 54TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,920 |
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SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock6,832 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Microchip Technology |
IC FLASH 4MBIT 70NS 48TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10µs
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: 48-TFBGA |
Stock2,400 |
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FLASH | FLASH | 4Mb (256K x 16) | Parallel | - | 10µs | 70ns | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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SII Semiconductor Corporation |
EEPROM
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (128 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 8ms
- Access Time: -
- Voltage - Supply: 1.6 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: SNT-8A
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Package: 8-SMD, Flat Lead |
Stock6,848 |
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EEPROM | EEPROM | 2Kb (128 x 16) | SPI | 2MHz | 8ms | - | 1.6 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SMD, Flat Lead | SNT-8A |
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Microchip Technology |
IC EEPROM 8KBIT 10MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (1K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,336 |
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EEPROM | EEPROM | 8Kb (1K x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Micron Technology Inc. |
IC FLASH 64GBIT 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 64Gb (8G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock3,792 |
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FLASH | FLASH - NAND | 64Gb (8G x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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STMicroelectronics |
IC EEPROM 256KBIT 5MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock608,820 |
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EEPROM | EEPROM | 256Kb (32K x 8) | SPI | 20MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Winbond Electronics |
IC FLASH 8MBIT 104MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
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Package: 8-WDFN Exposed Pad |
Stock12,186 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | SPI | 104MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x5) |
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Cypress Semiconductor Corp |
IC MEMORY NOR
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,880 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock6,768 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 200MHz | - | 3.1ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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Micron Technology Inc. |
SPI FLASH NOR SLC 32MX8 SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Xccela Bus
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TPBGA
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Package: 24-TBGA |
Stock3,232 |
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FLASH | FLASH | 256Mb (32M x 8) | Xccela Bus | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C | Surface Mount | 24-TBGA | 24-TPBGA |
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Micron Technology Inc. |
IC FLASH 512G PARALLEL 267MHZ
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 512Gb (64G x 8)
- Memory Interface: Parallel
- Clock Frequency: 267MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock10,788 |
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FLASH | FLASH - NAND | 512Gb (64G x 8) | Parallel | 267MHz | - | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 2G
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-VFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4X | 2Gbit | LVSTL | 1.6 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-VFBGA | 200-VFBGA (10x14.5) |
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Infineon Technologies |
IC SRAM 8MBIT PARALLEL 48VFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 1.65V ~ 2.2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 8Mbit | Parallel | - | 55ns | 55 ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
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Renesas Electronics Corporation |
M3032316 MRAM PARALLEL 32MB X16
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 32Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 484-BGA
- Supplier Device Package: 484-CABGA (23x23)
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Package: - |
Request a Quote |
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RAM | MRAM (Magnetoresistive RAM) | 32Mbit | Parallel | - | 35ns | 35 ns | 2.7V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 484-BGA | 484-CABGA (23x23) |
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Micron Technology Inc. |
LPDDR5 64G 1GX64 FBGA Y42M
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR5
- Memory Size: 64Gbit
- Memory Interface: Parallel
- Clock Frequency: 4.266 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.05V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 441-TFBGA
- Supplier Device Package: 441-TFBGA (14x14)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR5 | 64Gbit | Parallel | 4.266 GHz | - | - | 1.05V | - | Surface Mount | 441-TFBGA | 441-TFBGA (14x14) |
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Cypress Semiconductor Corp |
IC SRAM 4.5MBIT PAR 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 4.5Mbit
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 3.15V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
|
Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous, SDR | 4.5Mbit | Parallel | 100 MHz | - | 8 ns | 3.15V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |