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Micron Technology Inc. |
IC SDRAM 2GBIT 200MHZ 90VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 2Gb (64M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.0ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-VFBGA (9x13)
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Package: 90-VFBGA |
Stock7,920 |
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DRAM | SDRAM - Mobile LPDDR | 2Gb (64M x 32) | Parallel | 200MHz | 15ns | 5.0ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (9x13) |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 400MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock5,056 |
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SRAM | SRAM - Synchronous, DDR II | 18Mb (512K x 36) | Parallel | 400MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT 55NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,664 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 55ns | 55ns | 2.2 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 15NS 28SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (1M x 1)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 28-SOJ
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Package: 28-BSOJ (0.300", 7.62mm Width) |
Stock5,376 |
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SRAM | SRAM - Asynchronous | 1Mb (1M x 1) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
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Micron Technology Inc. |
IC SDRAM 64MBIT 125MHZ 54VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 125MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 6ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (8x8)
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Package: 54-VFBGA |
Stock7,536 |
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DRAM | SDRAM - Mobile LPSDR | 64Mb (4M x 16) | Parallel | 125MHz | 15ns | 6ns | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 54-VFBGA | 54-VFBGA (8x8) |
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Micron Technology Inc. |
IC SDRAM 512MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock16,728 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 100MHZ 100LQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock3,360 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 100MHz | - | 8.5ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Microchip Technology |
IC EEPROM 4KBIT 2MHZ 8MAP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8, 256 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: 8-MAP (3x4.9)
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Package: 8-UDFN Exposed Pad |
Stock7,488 |
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EEPROM | EEPROM | 4Kb (512 x 8, 256 x 16) | SPI | 2MHz | 10ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UDFN Exposed Pad | 8-MAP (3x4.9) |
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Microchip Technology |
IC EEPROM 8KBIT 3MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (1K x 8)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,448 |
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EEPROM | EEPROM | 8Kb (1K x 8) | SPI | 3MHz | 5ms | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 128KBIT 1MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 550ns
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock31,920 |
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EEPROM | EEPROM | 128Kb (16K x 8) | I2C | 1MHz | 10ms | 550ns | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 12NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 256Kb (16K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,816 |
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SRAM | SRAM - Dual Port, Synchronous | 256Kb (16K x 16) | Parallel | - | - | 12ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC FLASH 256MBIT 70NS 88TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -30°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 88-TFBGA
- Supplier Device Package: 88-TFBGA (8x10)
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Package: 88-TFBGA |
Stock6,800 |
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FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | 66MHz | 70ns | 70ns | 1.7 V ~ 2 V | -30°C ~ 85°C (TA) | Surface Mount | 88-TFBGA | 88-TFBGA (8x10) |
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IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 15NS 32SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 32-SOJ
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Package: 32-BSOJ (0.400", 10.16mm Width) |
Stock5,760 |
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SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 32-BSOJ (0.400", 10.16mm Width) | 32-SOJ |
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Microchip Technology |
IC EEPROM 64KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock7,120 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC EEPROM 2KBIT 2MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock7,264 |
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EEPROM | EEPROM | 2Kb (256 x 8) | SPI | 2MHz | 2ms | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Cypress Semiconductor Corp |
FLASH MEMORY NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: Parallel
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: -
- Access Time: 96ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: 24-VBGA |
Stock6,576 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | Parallel | 100MHz | - | 96ns | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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Rohm Semiconductor |
IC EEPROM 16KBIT 10MHZ 8SOPJ
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: SPI
- Clock Frequency: 5MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP-J
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,920 |
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EEPROM | EEPROM | 16Kb (2K x 8) | SPI | 5MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP-J |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT 8NS 48TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 8ns
- Access Time: 8ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA (6x8)
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Package: 48-TFBGA |
Stock17,256 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 8ns | 8ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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Microchip Technology |
IC EEPROM 1K SPI 2MHZ WAFER
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock5,024 |
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EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 2MHz | 6ms | - | 1.8 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
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Microchip Technology |
IC EEPROM 64K SPI 1MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: SPI
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock6,608 |
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EEPROM | EEPROM | 64Kb (8K x 8) | SPI | 1MHz | 5ms | - | 1.8 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
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Cypress Semiconductor Corp |
IC NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x8)
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Package: 8-WDFN Exposed Pad |
Stock7,904 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O, QPI | 66MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 209LFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (256K x 72)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: 2.6ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 209-BGA
- Supplier Device Package: 209-LFBGA (14x22)
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Package: 209-BGA |
Stock7,536 |
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SRAM | SRAM - Synchronous | 18Mb (256K x 72) | Parallel | 250MHz | - | 2.6ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 209-BGA | 209-LFBGA (14x22) |
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IDT, Integrated Device Technology Inc |
IC SRAM 256K PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,904 |
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SRAM | SRAM - Dual Port, Synchronous | 256Kb (32K x 8) | Parallel | - | - | 15ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PAR 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3L | 1Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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Winbond Electronics |
1GB LPDDR4X, X16, 1866MHZ, -40C~
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 1Gbit
- Memory Interface: LVSTL_06
- Clock Frequency: 1.867 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.6 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4X | 1Gbit | LVSTL_06 | 1.867 GHz | 18ns | 3.6 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
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Micron Technology Inc. |
IC DRAM 8GBIT PARALLEL 78FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 125°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-FBGA (7.5x11)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - DDR4 | 8Gbit | Parallel | 1.6 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | -40°C ~ 125°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |
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Fairchild Semiconductor |
IC EEPROM 128KBIT I2C 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kbit
- Memory Interface: I2C
- Clock Frequency: 100 kHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: 3.5 µs
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
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EEPROM | EEPROM | 128Kbit | I2C | 100 kHz | 6ms | 3.5 µs | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Micron Technology Inc. |
QLC 8T 1TX8 LBGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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