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Micron Technology Inc. |
IC FLASH NOR 128MX4 TBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (128M x 4)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,936 |
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FLASH | FLASH - NOR | 512Mb (128M x 4) | SPI | 108MHz | 8ms, 5ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | - | - | - |
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Micron Technology Inc. |
IC SDRAM 4GBIT 800MHZ 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: -
- Access Time: 13.75ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x14)
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Package: 96-TFBGA |
Stock6,448 |
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DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 800MHz | - | 13.75ns | 1.425 V ~ 1.575 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x14) |
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Micron Technology Inc. |
IC FLASH 64MBIT 75MHZ 8VFDFPN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8)
- Memory Interface: SPI
- Clock Frequency: 75MHz
- Write Cycle Time - Word, Page: 15ms, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-VDFPN (MLP8) (8x6)
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Package: 8-VDFN Exposed Pad |
Stock7,584 |
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FLASH | FLASH - NOR | 64Mb (8M x 8) | SPI | 75MHz | 15ms, 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-VDFN Exposed Pad | 8-VDFPN (MLP8) (8x6) |
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Cypress Semiconductor Corp |
IC SRAM 64KBIT 55NS 28SOIC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock2,032 |
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SRAM | SRAM - Asynchronous | 64Kb (8K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Microchip Technology |
IC EEPROM 16KBIT 150NS 24DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 1ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Through Hole
- Package / Case: 24-DIP (0.600", 15.24mm)
- Supplier Device Package: 24-PDIP
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Package: 24-DIP (0.600", 15.24mm) |
Stock13,872 |
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EEPROM | EEPROM | 16Kb (2K x 8) | Parallel | - | 1ms | 150ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Through Hole | 24-DIP (0.600", 15.24mm) | 24-PDIP |
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Cypress Semiconductor Corp |
IC SRAM 72MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 72Mb (2M x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock4,432 |
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SRAM | SRAM - Synchronous | 72Mb (2M x 36) | Parallel | 200MHz | - | 3ns | 2.375 V ~ 2.625 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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IDT, Integrated Device Technology Inc |
IC SRAM 1.125MBIT 12NS 128TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 1.125Mb (64K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: 128-LQFP |
Stock2,672 |
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SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 12ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 128-LQFP | 128-TQFP (14x20) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 7.5NS 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BGA |
Stock7,824 |
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SRAM | SRAM - Synchronous ZBT | 9Mb (256K x 36) | Parallel | - | - | 7.5ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH, RAM
- Technology: FLASH, DRAM
- Memory Size: 512Mbit Flash, 64Mbit RAM
- Memory Interface: Parallel
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,456 |
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FLASH, RAM | FLASH, DRAM | 512Mbit Flash, 64Mbit RAM | Parallel | 100MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 166MHZ 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BGA |
Stock5,216 |
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SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 166MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock6,304 |
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DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.5ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 333MHZ 84BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
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Package: 84-TFBGA |
Stock3,792 |
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DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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Micron Technology Inc. |
IC FLASH 512MBIT 110NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8, 32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 110ns
- Access Time: 110ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP (14x20)
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock56,040 |
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FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 110ns | 110ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP (14x20) |
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Rohm Semiconductor |
IC EEPROM 256KBIT 20MHZ 8SOPJ
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.6 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP-J
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,048 |
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EEPROM | EEPROM | 256Kb (32K x 8) | SPI | 20MHz | 5ms | - | 1.6 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP-J |
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Alliance Memory, Inc. |
IC SRAM 16M PARALLEL 48TSOP I
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock6,720 |
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SRAM | SRAM | 16Mb (1M x 16) | Parallel | - | 55ns | 55ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC PSRAM 32M PARALLEL 54BGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 32Mb (2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (6x8)
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Package: 54-VFBGA |
Stock2,736 |
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PSRAM | PSRAM (Pseudo SRAM) | 32Mb (2M x 16) | Parallel | - | 70ns | 70ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 54-VFBGA | 54-VFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512M (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (13x8)
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Package: 60-TFBGA |
Stock3,360 |
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DRAM | SDRAM - DDR | 512M (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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IDT, Integrated Device Technology Inc |
IC SRAM 128K PARALLEL 68PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (16K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: 68-LCC (J-Lead) |
Stock2,592 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (16K x 8) | Parallel | - | 45ns | 45ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.33GHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 8Gb (1G x 8)
- Memory Interface: Parallel
- Clock Frequency: 1.33GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.26 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,896 |
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DRAM | SDRAM - DDR4 | 8Gb (1G x 8) | Parallel | 1.33GHz | - | - | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - |
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Micron Technology Inc. |
IC DRAM 4G PARALLEL 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1.2GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x14)
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Package: 96-TFBGA |
Stock3,712 |
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DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.2GHz | 15ns | 19ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x14) |
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Samsung |
SRAM ASYNC FAST 1M 128Kx8 3.3V 3
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 3.3V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: 32-SOJ
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 1Mbit | Parallel | - | 15ns | - | 3.3V | 0°C ~ 70°C (TA) | Surface Mount | - | 32-SOJ |
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Flexxon Pte Ltd |
IC FLASH 2TBIT EMMC 5.1 100FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 2Tbit
- Memory Interface: eMMC_5.1
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-FBGA (14x18)
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Package: - |
Stock30 |
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FLASH | FLASH - NAND (TLC) | 2Tbit | eMMC_5.1 | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 100-LBGA | 100-FBGA (14x18) |
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GSI Technology Inc. |
IC SRAM 36MBIT PARALLEL 165FPBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Quad Port, Synchronous, DDR II
- Memory Size: 36Mbit
- Memory Interface: Parallel
- Clock Frequency: 300 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 100°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FPBGA (15x13)
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Package: - |
Request a Quote |
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SRAM | SRAM - Quad Port, Synchronous, DDR II | 36Mbit | Parallel | 300 MHz | - | - | 1.7V ~ 1.9V | -40°C ~ 100°C (TJ) | Surface Mount | 165-LBGA | 165-FPBGA (15x13) |
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Silicon Motion, Inc. |
IC FLASH 160GBIT EMMC 153BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 160Gbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 153-TBGA
- Supplier Device Package: 153-BGA (11.5x13)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 160Gbit | eMMC | - | - | - | - | -40°C ~ 105°C | Surface Mount | 153-TBGA | 153-BGA (11.5x13) |
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Micron Technology Inc. |
IC FLASH 256GBIT MMC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 256Gbit
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND | 256Gbit | MMC | - | - | - | - | -40°C ~ 105°C (TA) | - | - | - |
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Renesas Electronics Corporation |
IC SRAM 512KBIT PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 512Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: - |
Request a Quote |
|
SRAM | SRAM - Dual Port, Asynchronous | 512Kbit | Parallel | - | 15ns | 15 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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onsemi |
IC EEPROM 4KBIT MICROWIRE 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kbit
- Memory Interface: Microwire
- Clock Frequency: 2 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 500 ns
- Voltage - Supply: 2.5V ~ 6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
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EEPROM | EEPROM | 4Kbit | Microwire | 2 MHz | - | 500 ns | 2.5V ~ 6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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STMicroelectronics |
FLASH 4MB TSOP Btm Blk 3.3v Ind.
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 120 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: 48-TSOP
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Package: - |
Request a Quote |
|
FLASH | FLASH - NOR | 4Mbit | Parallel | - | - | 120 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | - | 48-TSOP |
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