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Winbond Electronics |
IC FLASH 16MBIT 104MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mb (2M x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock16,860 |
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FLASH | FLASH - NOR | 16Mb (2M x 8) | SPI | 104MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 9NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 9ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock4,384 |
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SRAM | SRAM - Synchronous ZBT | 4.5Mb (128K x 36) | Parallel | - | - | 9ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC FLASH 8MBIT 33MHZ 40TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: Parallel
- Clock Frequency: 33MHz
- Write Cycle Time - Word, Page: -
- Access Time: 250ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 40-TSOP (10x20)
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Package: 40-TFSOP (0.724", 18.40mm Width) |
Stock4,704 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | Parallel | 33MHz | - | 250ns | 3 V ~ 3.6 V | -20°C ~ 85°C (TA) | Surface Mount | 40-TFSOP (0.724", 18.40mm Width) | 40-TSOP (10x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 166MHZ 54LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-LFBGA
- Supplier Device Package: 54-LFBGA (8x13)
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Package: 54-LFBGA |
Stock6,976 |
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DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 166MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-LFBGA | 54-LFBGA (8x13) |
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Cypress Semiconductor Corp |
IC SRAM 16KBIT 55NS 52QFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-QFP
- Supplier Device Package: 52-PQFP (10x10)
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Package: 52-QFP |
Stock3,008 |
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SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 52-QFP | 52-PQFP (10x10) |
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Microchip Technology |
IC EEPROM 16KBIT 1MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 900ns
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,176 |
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EEPROM | EEPROM | 16Kb (2K x 8) | I2C | 400kHz | 10ms | 900ns | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC OTP 1KBIT 1WIRE 4WLP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Kb (1K x 1)
- Memory Interface: 1-Wire?
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 15µs
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 4-UFBGA, WLCSP
- Supplier Device Package: 4-WLP (1.62x0.93)
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Package: 4-UFBGA, WLCSP |
Stock42,708 |
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EPROM | EPROM - OTP | 1Kb (1K x 1) | 1-Wire? | - | - | 15µs | - | -40°C ~ 85°C (TA) | Surface Mount | 4-UFBGA, WLCSP | 4-WLP (1.62x0.93) |
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Microchip Technology |
IC OTP 2MBIT 150NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 150ns
- Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock5,728 |
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EPROM | EPROM - OTP | 2Mb (256K x 8) | Parallel | - | - | 150ns | 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Cypress Semiconductor Corp |
IC SRAM 144MBIT 550MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II+
- Memory Size: 144Mb (4M x 36)
- Memory Interface: Parallel
- Clock Frequency: 550MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
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Package: 165-LBGA |
Stock4,320 |
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SRAM | SRAM - Synchronous, DDR II+ | 144Mb (4M x 36) | Parallel | 550MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 10NS 208QFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 2.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-BFQFP
- Supplier Device Package: 208-PQFP (28x28)
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Package: 208-BFQFP |
Stock4,768 |
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SRAM | SRAM - Dual Port, Asynchronous | 9Mb (256K x 36) | Parallel | - | 10ns | 10ns | 2.4 V ~ 2.6 V | 0°C ~ 70°C (TA) | Surface Mount | 208-BFQFP | 208-PQFP (28x28) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 133MHZ 128TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: 128-LQFP |
Stock5,664 |
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SRAM | SRAM - Dual Port, Synchronous | 4.5Mb (256K x 18) | Parallel | 133MHz | - | 4.2ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 128-LQFP | 128-TQFP (14x20) |
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IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 35NS 48DIP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 48-DIP (0.600", 15.24mm)
- Supplier Device Package: 48-SIDE BRAZED
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Package: 48-DIP (0.600", 15.24mm) |
Stock4,320 |
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SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 48-DIP (0.600", 15.24mm) | 48-SIDE BRAZED |
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Micron Technology Inc. |
IC RLDRAM 576MBIT 400MHZ 144FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (16M x 36)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: -
- Access Time: 15ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 144-TFBGA
- Supplier Device Package: 144-FBGA (18.5x11)
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Package: 144-TFBGA |
Stock6,416 |
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DRAM | DRAM | 576Mb (16M x 36) | Parallel | 400MHz | - | 15ns | 1.7 V ~ 1.9 V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-FBGA (18.5x11) |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 55NS 84PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 256Kb (16K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-LCC (J-Lead)
- Supplier Device Package: 84-PLCC (29.21x29.21)
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Package: 84-LCC (J-Lead) |
Stock6,736 |
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SRAM | SRAM - Dual Port, Asynchronous | 256Kb (16K x 16) | Parallel | - | 55ns | 55ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 84-LCC (J-Lead) | 84-PLCC (29.21x29.21) |
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Micron Technology Inc. |
IC FLASH 128GBIT 152VBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 152-VFBGA
- Supplier Device Package: 152-VFBGA (14x14)
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Package: 152-VFBGA |
Stock7,552 |
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FLASH | FLASH - NAND | 128Gb (16G x 8) | Parallel | 166MHz | - | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 152-VFBGA | 152-VFBGA (14x14) |
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Micron Technology Inc. |
IC FLASH 4GBIT 63VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,896 |
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FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 15NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock4,896 |
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SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mb (2M x 8, 1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,032 |
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FLASH | FLASH - NOR | 16Mb (2M x 8, 1M x 16) | Parallel | - | 55ns | 55ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
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Alliance Memory, Inc. |
IC SRAM 256KBIT 15NS 28SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 28-SOJ
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Package: 28-BSOJ (0.300", 7.62mm Width) |
Stock5,376 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
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Microchip Technology |
IC EEPROM 32KBIT 400KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock3,008 |
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EEPROM | EEPROM | 32Kb (4K x 8) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC EEPROM 64K I2C 400KHZ WAFER
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I²C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock6,336 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I²C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | Die | Die |
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Cypress Semiconductor Corp |
IC FLASH 512M PARALLEL 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock5,296 |
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FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Micron Technology Inc. |
IC FLASH MEM 6G LPDDR2 MLC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,200 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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BYTe Semiconductor |
2 MBIT, 1.8V (1.65V TO 2.0V), -4
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 2Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 85 MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: 6 ns
- Voltage - Supply: 1.65V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN
- Supplier Device Package: 6-USON (1.2x1.2)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 2Mbit | SPI - Quad I/O | 85 MHz | 3ms | 6 ns | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 6-UFDFN | 6-USON (1.2x1.2) |
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Micron Technology Inc. |
LPDDR5 32GBIT 64 561/570 TFBGA 2
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Insignis Technology Corporation |
LPDDR4 2GB X16 3200MHZ CL22 10X1
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 2Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-FBGA (10x14.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4 | 2Gbit | LVSTL | 1.6 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 0°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | 200-FBGA (10x14.5) |
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Rochester Electronics, LLC |
27S35FM/B
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC DRAM 64GBIT 3.2GHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR5
- Memory Size: 64Gbit
- Memory Interface: -
- Clock Frequency: 3.2 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.05V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR5 | 64Gbit | - | 3.2 GHz | - | - | 1.05V | -25°C ~ 85°C (TC) | - | - | - |
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