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Micron Technology Inc. |
IC FLASH 64MBIT 108MHZ 16SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (16M x 4)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SO W
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock5,840 |
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FLASH | FLASH - NOR | 64Mb (16M x 4) | SPI | 108MHz | 8ms, 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO W |
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Micron Technology Inc. |
IC RLDRAM 576MBIT 1.067GHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (16M x 36)
- Memory Interface: Parallel
- Clock Frequency: 1067MHz
- Write Cycle Time - Word, Page: -
- Access Time: 10ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-TBGA
- Supplier Device Package: 168-BGA
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Package: 168-TBGA |
Stock4,720 |
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DRAM | DRAM | 576Mb (16M x 36) | Parallel | 1067MHz | - | 10ns | 1.28 V ~ 1.42 V | -40°C ~ 95°C (TC) | Surface Mount | 168-TBGA | 168-BGA |
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Micron Technology Inc. |
IC FLASH/LPDRAM 6GBIT 168WFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH, RAM
- Technology: FLASH - NAND, Mobile LPDRAM
- Memory Size: 4Gb (256M x 16)(NAND), 2Gb (128M x 16)(LPDRAM)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 168-WFBGA
- Supplier Device Package: 168-WFBGA (12x12)
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Package: 168-WFBGA |
Stock2,400 |
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FLASH, RAM | FLASH - NAND, Mobile LPDRAM | 4Gb (256M x 16)(NAND), 2Gb (128M x 16)(LPDRAM) | Parallel | 200MHz | - | - | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | Surface Mount | 168-WFBGA | 168-WFBGA (12x12) |
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Microchip Technology |
IC EEPROM 2KBIT 1MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,968 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 1MHz | 5ms | - | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Winbond Electronics |
IC FLASH 64MBIT 80MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8)
- Memory Interface: SPI
- Clock Frequency: 80MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: 8-WDFN Exposed Pad |
Stock5,328 |
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FLASH | FLASH - NOR | 64Mb (8M x 8) | SPI | 80MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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ON Semiconductor |
IC EEPROM 512KBIT 150NS 32DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 512Kb (64K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 5ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 32-DIP (0.600", 15.24mm)
- Supplier Device Package: 32-PDIP
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Package: 32-DIP (0.600", 15.24mm) |
Stock7,504 |
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EEPROM | EEPROM | 512Kb (64K x 8) | Parallel | - | 5ms | 150ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 32-DIP (0.600", 15.24mm) | 32-PDIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock8,928 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 20NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock6,672 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 20ns | 20ns | 2.375 V ~ 2.625 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Winbond Electronics |
IC FLASH 4MBIT 40MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 4Mb (512K x 8)
- Memory Interface: SPI
- Clock Frequency: 40MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock16,584 |
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FLASH | FLASH | 4Mb (512K x 8) | SPI | 40MHz | 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC NVSRAM 4MBIT 100NS 72SIMM
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 4Mb (128K x 32, 256K x 16, 512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Socket
- Package / Case: 72-SIMM
- Supplier Device Package: 72-SIMM
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Package: 72-SIMM |
Stock5,280 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (128K x 32, 256K x 16, 512K x 8) | Parallel | - | 100ns | 100ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Socket | 72-SIMM | 72-SIMM |
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Renesas Electronics America |
IC SRAM 32MBIT 70NS 48TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 32Mb (4M x 8, 2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TSOP
- Supplier Device Package: 48-TSOP
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Package: 48-TSOP |
Stock6,928 |
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SRAM | SRAM | 32Mb (4M x 8, 2M x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TSOP | 48-TSOP |
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IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 35NS 68PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (16K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: 68-LCC (J-Lead) |
Stock4,128 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (16K x 8) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 15NS 84PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (8K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-LCC (J-Lead)
- Supplier Device Package: 84-PLCC (29.21x29.21)
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Package: 84-LCC (J-Lead) |
Stock5,232 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 84-LCC (J-Lead) | 84-PLCC (29.21x29.21) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 133MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock3,824 |
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DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 10NS 36SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 36-SOJ
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Package: 36-BSOJ (0.400", 10.16mm Width) |
Stock6,224 |
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SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 36-BSOJ (0.400", 10.16mm Width) | 36-SOJ |
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Adesto Technologies |
IC FLASH 4MBIT 85MHZ 8WLCSP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 4Mb (512K x 8)
- Memory Interface: SPI
- Clock Frequency: 85MHz
- Write Cycle Time - Word, Page: 8µs, 2.75ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 4.4 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-XFBGA, WLCSP
- Supplier Device Package: 8-WLCSP
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Package: 8-XFBGA, WLCSP |
Stock4,880 |
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FLASH | FLASH | 4Mb (512K x 8) | SPI | 85MHz | 8µs, 2.75ms | - | 1.65 V ~ 4.4 V | -40°C ~ 85°C (TC) | Surface Mount | 8-XFBGA, WLCSP | 8-WLCSP |
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Maxim Integrated |
IC EPROM 1K 1WIRE 4WLP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Kb (128 x 8)
- Memory Interface: 1-Wire®
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.8 V ~ 6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 4-UFBGA, WLBGA
- Supplier Device Package: 4-WLP (1.62x0.93)
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Package: 4-UFBGA, WLBGA |
Stock3,024 |
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EPROM | EPROM - OTP | 1Kb (128 x 8) | 1-Wire® | - | - | - | 2.8 V ~ 6 V | -40°C ~ 85°C (TA) | Surface Mount | 4-UFBGA, WLBGA | 4-WLP (1.62x0.93) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 200MHZ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock4,736 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 200MHz | - | 3ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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Microchip Technology |
5MHZ AUTO GRADE1 8-UDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: SPI
- Clock Frequency: 5MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock2,016 |
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EEPROM | EEPROM | 2Kb (256 x 8) | SPI | 5MHz | 5ms | - | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 512Mbit | SPI - Quad I/O, QPI | 133 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
Stock1,173 |
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FLASH | FLASH - NOR | 512Mbit | SPI - Quad I/O | 133 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Cypress Semiconductor Corp |
SRAM - ASYNCHRONOUS MEMORY IC 2M
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP I
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Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous | 2Mbit | Parallel | - | 45ns | 45 ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP I |
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Renesas Electronics Corporation |
IC RAM 8K X 8 DUAL PORT
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: - |
Request a Quote |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kbit | Parallel | - | 12ns | 12 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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Renesas Electronics Corporation |
M3032316 MRAM PARALLEL 32MB X16
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 32Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP
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Package: - |
Request a Quote |
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RAM | MRAM (Magnetoresistive RAM) | 32Mbit | Parallel | - | 45ns | 45 ns | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP |
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Cypress Semiconductor Corp |
IC SRAM 8MBIT PARALLEL 48FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.3V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-FBGA (6x10)
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 8Mbit | Parallel | - | 70ns | 70 ns | 2.7V ~ 3.3V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-FBGA (6x10) |
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BYTe Semiconductor |
16 MBIT, 3.0V (2.7V TO 3.6V), -4
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: 60µs, 4ms
- Access Time: 7 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-USON (2x3)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 16Mbit | SPI - Quad I/O, QPI | 108 MHz | 60µs, 4ms | 7 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-USON (2x3) |
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Macronix |
MEMORY
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 4ms
- Access Time: 5.5 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA, CSPBGA
- Supplier Device Package: 24-CSPBGA (6x8)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 1Gbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 4ms | 5.5 ns | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA, CSPBGA | 24-CSPBGA (6x8) |
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Rochester Electronics, LLC |
4,096-BIT (512X8) BIPOLAR PROM
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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