|
|
Renesas Electronics America |
IC SRAM 4MBIT 45NS 32SOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.450", 11.40mm Width)
- Supplier Device Package: 32-SOP
|
Package: 32-SOIC (0.450", 11.40mm Width) |
Stock2,928 |
|
SRAM | SRAM | 4Mb (512K x 8) | Parallel | - | 45ns | 45ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.450", 11.40mm Width) | 32-SOP |
|
|
Micron Technology Inc. |
IC FLASH 32MBIT 75MHZ 24TBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8)
- Memory Interface: SPI
- Clock Frequency: 75MHz
- Write Cycle Time - Word, Page: 15ms, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-T-PBGA (6x8)
|
Package: 24-TBGA |
Stock4,272 |
|
FLASH | FLASH - NOR | 32Mb (4M x 8) | SPI | 75MHz | 15ms, 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-T-PBGA (6x8) |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
|
Package: 119-BGA |
Stock3,728 |
|
SRAM | SRAM - Synchronous ZBT | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 200MHZ 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
|
Package: 165-TBGA |
Stock7,904 |
|
SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
Microchip Technology |
IC FLASH 1MBIT 66MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (264 Bytes x 512 pages)
- Memory Interface: SPI
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: 4ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.209", 5.30mm Width) |
Stock12,660 |
|
FLASH | FLASH | 1Mb (264 Bytes x 512 pages) | SPI | 66MHz | 4ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
|
|
Cypress Semiconductor Corp |
IC SRAM 2MBIT 167MHZ 256FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 2Mb (64K x 36)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.4ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
|
Package: 256-LBGA |
Stock2,976 |
|
SRAM | SRAM - Dual Port, Synchronous | 2Mb (64K x 36) | Parallel | 167MHz | - | 4.4ns | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-FBGA (17x17) |
|
|
Micron Technology Inc. |
IC SDRAM 512MBIT 133MHZ 90VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-VFBGA (10x13)
|
Package: 90-VFBGA |
Stock7,344 |
|
DRAM | SDRAM - Mobile LPSDR | 512Mb (16M x 32) | Parallel | 133MHz | 15ns | 5.4ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (10x13) |
|
|
Microchip Technology |
IC FLASH 4MBIT 250NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ms
- Access Time: 250ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
|
Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock10,068 |
|
FLASH | FLASH | 4Mb (512K x 8) | Parallel | - | 20ms | 250ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 183MHZ 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 183MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.3ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
|
Package: 119-BGA |
Stock4,016 |
|
SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | 183MHz | - | 3.3ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
Micron Technology Inc. |
IC FLASH 512MBIT 105NS 64LBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 105ns
- Voltage - Supply: 1.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-LBGA (11x13)
|
Package: 64-LBGA |
Stock2,176 |
|
FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 105ns | 1.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
|
|
Cypress Semiconductor Corp |
ASYNC SRAMS
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock6,512 |
|
SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | - | - | - |
|
|
Cypress Semiconductor Corp |
IC FRAM 16KBIT 20MHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 16Kb (2K x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-TDFN (4x4.5)
|
Package: 8-VDFN Exposed Pad |
Stock5,376 |
|
FRAM | FRAM (Ferroelectric RAM) | 16Kb (2K x 8) | SPI | 20MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-VDFN Exposed Pad | 8-TDFN (4x4.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
|
Package: 96-TFBGA |
Stock2,736 |
|
DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
Microchip Technology |
IC EPROM 2M PARALLEL 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
|
Package: 32-LCC (J-Lead) |
Stock5,024 |
|
EPROM | EPROM - OTP | 2Mb (256K x 8) | Parallel | - | - | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
|
|
Micron Technology Inc. |
MLC 2T 256GX8 VLGA 8DP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock7,024 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
IC DRAM 2G PARALLEL 933MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-FBGA (8x10.5)
|
Package: 78-TFBGA |
Stock5,968 |
|
DRAM | SDRAM - DDR3L | 2Gb (256M x 8) | Parallel | 933MHz | - | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x10.5) |
|
|
Microchip Technology |
1KB I2C EEPROM 1MHZ 1.7-5.5V 8-M
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I²C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 450ns
- Voltage - Supply: 1.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
|
Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock2,880 |
|
EEPROM | EEPROM | 1Kb (128 x 8) | I²C | 1MHz | 5ms | 450ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
Microchip Technology |
APG STANDARD
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8, 128 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,408 |
|
EEPROM | EEPROM | 2Kb (256 x 8, 128 x 16) | SPI | 2MHz | 6ms | - | 2.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Analog Devices Inc./Maxim Integrated |
DS1230 3.3 VOLT, 256 K NV SRAM
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 28-EDIP
|
Package: - |
Request a Quote |
|
NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kbit | Parallel | - | - | - | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
|
|
GSI Technology Inc. |
IC SRAM 36MBIT PARALLEL 165FPBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, Standard
- Memory Size: 36Mbit
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
- Operating Temperature: -40°C ~ 100°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FPBGA (13x15)
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Synchronous, Standard | 36Mbit | Parallel | 333 MHz | - | - | 2.3V ~ 2.7V, 3V ~ 3.6V | -40°C ~ 100°C (TJ) | Surface Mount | 165-LBGA | 165-FPBGA (13x15) |
|
|
ATP Electronics, Inc. |
IC FLASH 512GBIT EMMC 153BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (MLC)
- Memory Size: 512Gbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 153-FBGA
- Supplier Device Package: 153-BGA (11.5x13)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NAND (MLC) | 512Gbit | eMMC | - | - | - | - | -40°C ~ 105°C | Surface Mount | 153-FBGA | 153-BGA (11.5x13) |
|
|
Intel |
IC FLASH 8MBIT PARALLEL 40TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - Boot Block
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 90ns
- Access Time: 90 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 40-TSOP
|
Package: - |
Request a Quote |
|
FLASH | FLASH - Boot Block | 8Mbit | Parallel | - | 90ns | 90 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 40-TFSOP (0.724", 18.40mm Width) | 40-TSOP |
|
|
Winbond Electronics |
2GB LPDDR4X, DDP, X32, 1600MHZ,
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gbit
- Memory Interface: LVSTL_06
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.6 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4X | 2Gbit | LVSTL_06 | 1.6 GHz | 18ns | 3.6 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
|
Everspin Technologies Inc. |
IC RAM 16MBIT XSPI/QUAD 24TBGA
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 16Mbit
- Memory Interface: xSPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.65V ~ 2V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TBGA (6x8)
|
Package: - |
Request a Quote |
|
RAM | MRAM (Magnetoresistive RAM) | 16Mbit | xSPI - Quad I/O | 133 MHz | - | - | 1.65V ~ 2V | 0°C ~ 70°C | Surface Mount | 24-TBGA | 24-TBGA (6x8) |
|
|
Renesas Electronics Corporation |
IC SRAM 72MBIT PARALLEL 165PBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II+
- Memory Size: 72Mbit
- Memory Interface: Parallel
- Clock Frequency: 450 MHz
- Write Cycle Time - Word, Page: 2.2ns
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-PBGA (13x15)
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Synchronous, QDR II+ | 72Mbit | Parallel | 450 MHz | 2.2ns | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-PBGA (13x15) |
|
|
Micron Technology Inc. |
USSD 256G
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 256Gbit
- Memory Interface: UFS2.1
- Clock Frequency: 52 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 153-TFBGA
- Supplier Device Package: 153-TFBGA (11.5x13)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NAND (SLC) | 256Gbit | UFS2.1 | 52 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 95°C (TC) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
|
|
Micron Technology Inc. |
MM20F EMMC 512GBIT 153/196 LFBGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock486 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Renesas Electronics Corporation |
M3004316 MRAM PARALLEL 4MB X16 3
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 484-BGA
- Supplier Device Package: 484-CABGA (23x23)
|
Package: - |
Request a Quote |
|
RAM | MRAM (Magnetoresistive RAM) | 4Mbit | Parallel | - | 45ns | 45 ns | 2.7V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 484-BGA | 484-CABGA (23x23) |