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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 133MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock5,120 |
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DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 133MHz | - | 5.5ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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Micron Technology Inc. |
IC FLASH 16MBIT 75MHZ 16SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mb (2M x 8)
- Memory Interface: SPI
- Clock Frequency: 75MHz
- Write Cycle Time - Word, Page: 15ms, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SO W
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock4,240 |
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FLASH | FLASH - NOR | 16Mb (2M x 8) | SPI | 75MHz | 15ms, 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO W |
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Micron Technology Inc. |
IC SDRAM 512MBIT 400MHZ 60FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-FBGA (8x10)
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Package: 60-TFBGA |
Stock5,056 |
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DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | Surface Mount | 60-TFBGA | 60-FBGA (8x10) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 150MHZ 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 150MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BGA |
Stock5,408 |
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SRAM | SRAM - Synchronous ZBT | 9Mb (512K x 18) | Parallel | 150MHz | - | 3.8ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 8.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 8.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,416 |
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SRAM | SRAM - Synchronous ZBT | 9Mb (256K x 36) | Parallel | - | - | 8.5ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 3MBIT 10NS 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 3Mb (128K x 24)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BGA |
Stock5,392 |
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SRAM | SRAM - Asynchronous | 3Mb (128K x 24) | Parallel | - | 10ns | 10ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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Maxim Integrated |
IC OTP 64KBIT 1WIRE TO92-3
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 64Kb (64K x 1)
- Memory Interface: 1-Wire?
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 2µs
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,288 |
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EPROM | EPROM - OTP | 64Kb (64K x 1) | 1-Wire? | - | - | 2µs | - | -40°C ~ 85°C (TA) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92-3 |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 333MHZ 84BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-TWBGA (8x12.5)
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Package: 84-TFBGA |
Stock7,072 |
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DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 167MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x13)
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Package: 60-TFBGA |
Stock7,152 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 110ns
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,696 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 110ns | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
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Micron Technology Inc. |
IC SDRAM 1GBIT 533MHZ 134FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 533MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
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Package: 134-VFBGA |
Stock2,416 |
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DRAM | SDRAM - Mobile LPDDR2 | 1Gb (64M x 16) | Parallel | 533MHz | - | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
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Adesto Technologies |
IC FLASH 32MBIT 85MHZ 8VDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 32Mb (512 Bytes x 8192 pages)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 8µs, 4ms
- Access Time: -
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-VDFN (6x8)
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Package: 8-VDFN Exposed Pad |
Stock2,496 |
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FLASH | FLASH | 32Mb (512 Bytes x 8192 pages) | SPI | 104MHz | 8µs, 4ms | - | 2.3 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-VDFN Exposed Pad | 8-VDFN (6x8) |
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Microchip Technology |
IC FLASH 2MBIT 55NS 48TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20µs
- Access Time: 55ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA
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Package: 48-TFBGA |
Stock5,728 |
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FLASH | FLASH | 2Mb (128K x 16) | Parallel | - | 20µs | 55ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA |
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Microchip Technology |
IC EEPROM 8KBIT 400KHZ SOT23-5
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (256 x 8 x 4)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SOT-23-5
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Package: SC-74A, SOT-753 |
Stock7,456 |
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EEPROM | EEPROM | 8Kb (256 x 8 x 4) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | SC-74A, SOT-753 | SOT-23-5 |
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Microchip Technology |
IC EEPROM 128BIT 400KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128b (16 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 4ms
- Access Time: 3500ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock64,800 |
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EEPROM | EEPROM | 128b (16 x 8) | I2C | 400kHz | 4ms | 3500ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Adesto Technologies |
IC FLASH 8MBIT 85MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 8Mb (264 Bytes x 4096 pages)
- Memory Interface: SPI
- Clock Frequency: 85MHz
- Write Cycle Time - Word, Page: 8µs, 4ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,944 |
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FLASH | FLASH | 8Mb (264 Bytes x 4096 pages) | SPI | 85MHz | 8µs, 4ms | - | 1.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC FLASH 256M PARALLEL 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock2,304 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | Parallel | - | 100ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Cypress Semiconductor Corp |
IC FLASH 16M SPI 108MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mb (2M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock3,872 |
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FLASH | FLASH - NOR | 16Mb (2M x 8) | SPI - Quad I/O | 108MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 200ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TC)
- Mounting Type: Through Hole
- Package / Case: 28-CDIP (0.600", 15.24mm)
- Supplier Device Package: 28-CDIP
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Package: 28-CDIP (0.600", 15.24mm) |
Stock4,672 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 200ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
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Micron Technology Inc. |
SPECIAL/CUSTOM LPDDR3
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,384 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
N24C32 - EEPROM, 32KX1, SERIAL,
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC SRAM 4MBIT PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Standard
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20.1)
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Package: - |
Request a Quote |
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SRAM | SRAM - Standard | 4Mbit | Parallel | 133 MHz | - | 4 ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20.1) |
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Micron Technology Inc. |
EMMC 1T
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 1Tbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 85°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 1Tbit | eMMC | - | - | - | - | -25°C ~ 85°C | - | - | - |
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Micron Technology Inc. |
USSD 1T
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Alliance Memory, Inc. |
IC DRAM 512MBIT PAR 54FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mbit
- Memory Interface: Parallel
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: 14ns
- Access Time: 6 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-FBGA (8x8)
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Package: - |
Request a Quote |
|
DRAM | SDRAM | 512Mbit | Parallel | 143 MHz | 14ns | 6 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TFBGA | 54-FBGA (8x8) |
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Everspin Technologies Inc. |
IC RAM 2MBIT PARALLEL 44TSOP2
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP2
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Package: - |
Request a Quote |
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RAM | MRAM (Magnetoresistive RAM) | 2Mbit | Parallel | - | 35ns | 35 ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
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ISSI, Integrated Silicon Solution Inc |
2G, 0.57-0.65V/1.06-1.17/1.70-1.
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-VFBGA (10x14.5)
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Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4X | 2Gbit | LVSTL | 1.6 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-VFBGA (10x14.5) |
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Everspin Technologies Inc. |
IC RAM 1MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 1Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 40 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
|
Package: - |
Request a Quote |
|
RAM | MRAM (Magnetoresistive RAM) | 1Mbit | SPI - Quad I/O, QPI | 40 MHz | - | 7 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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