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Cypress Semiconductor Corp |
IC FLASH 64MBIT 110NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8, 4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 110ns
- Access Time: 110ns
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-Fortified BGA (13x11)
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Package: 64-LBGA |
Stock4,176 |
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FLASH | FLASH - NOR | 64Mb (8M x 8, 4M x 16) | Parallel | - | 110ns | 110ns | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 250MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: 2.6ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock6,080 |
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SRAM | SRAM - Synchronous | 36Mb (1M x 36) | Parallel | 250MHz | - | 2.6ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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STMicroelectronics |
IC EEPROM 4KBIT 5MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,024 |
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EEPROM | EEPROM | 4Kb (512 x 8) | SPI | 20MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Cypress Semiconductor Corp |
IC SRAM 2MBIT 70NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock3,872 |
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SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Microchip Technology |
IC EEPROM 64KBIT 200NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 200ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock5,392 |
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EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 10ms | 200ns | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Maxim Integrated |
IC NVSRAM 2MBIT 70NS 32EDIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.75 V ~ 5.25 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 32-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 32-EDIP
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Package: 32-DIP Module (0.600", 15.24mm) |
Stock7,088 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 2Mb (256K x 8) | Parallel | - | 70ns | 70ns | 4.75 V ~ 5.25 V | -40°C ~ 85°C (TA) | Through Hole | 32-DIP Module (0.600", 15.24mm) | 32-EDIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 64KBIT 25NS 68PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: 68-LCC (J-Lead) |
Stock4,400 |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 25ns | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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IDT, Integrated Device Technology Inc |
IC SRAM 32KBIT 25NS 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 32Kb (4K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock7,232 |
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SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 166MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile DDR
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock3,872 |
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DRAM | SDRAM - Mobile DDR | 512Mb (16M x 32) | Parallel | 166MHz | 12ns | 5.5ns | 1.7 V ~ 1.95 V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 12NS 48CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-CABGA (9x9)
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Package: 48-TFBGA |
Stock3,232 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-CABGA (9x9) |
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Everspin Technologies Inc. |
IC MRAM 256KBIT 45NS 48FBGA
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LFBGA
- Supplier Device Package: 48-FBGA (8x8)
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Package: 48-LFBGA |
Stock5,024 |
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RAM | MRAM (Magnetoresistive RAM) | 256Kb (32K x 8) | Parallel | - | 45ns | 45ns | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 48-LFBGA | 48-FBGA (8x8) |
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IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 10NS 48CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3.15 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LFBGA
- Supplier Device Package: 48-CABGA (7x7)
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Package: 48-LFBGA |
Stock5,344 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 10ns | 10ns | 3.15 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 48-LFBGA | 48-CABGA (7x7) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock54,540 |
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DRAM | SDRAM | 128Mb (8M x 16) | Parallel | 166MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Adesto Technologies |
IC EEPROM 32KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: CBRAM?
- Technology: CBRAM
- Memory Size: 32kb (32B Page Size)
- Memory Interface: I2C
- Clock Frequency: 750kHz
- Write Cycle Time - Word, Page: 100µs, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock5,872 |
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CBRAM? | CBRAM | 32kb (32B Page Size) | I2C | 750kHz | 100µs, 5ms | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC EEPROM 1KBIT 2MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock15,120 |
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EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 2MHz | 6ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Micron Technology Inc. |
IC DRAM 32G PARALLEL 1333MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 32Gb (512M x 64)
- Memory Interface: Parallel
- Clock Frequency: 1333MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.2V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,424 |
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DRAM | SDRAM - DDR4 | 32Gb (512M x 64) | Parallel | 1333MHz | - | - | 1.2V | 0°C ~ 95°C (TC) | - | - | - |
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Micron Technology Inc. |
UFS 2T
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 4.5Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 8.5 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous, SDR | 4.5Mbit | Parallel | - | - | 8.5 ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Infineon Technologies |
FRAM
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 8Mbit
- Memory Interface: SPI
- Clock Frequency: 50 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 1.71V ~ 1.89V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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FRAM | FRAM (Ferroelectric RAM) | 8Mbit | SPI | 50 MHz | - | 8 ns | 1.71V ~ 1.89V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-FBGA (6x8) |
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ABLIC Inc. |
LINEAR IC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kbit
- Memory Interface: Microwire
- Clock Frequency: 2 MHz
- Write Cycle Time - Word, Page: 4ms
- Access Time: -
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead Exposed Pad
- Supplier Device Package: HSNT-8-A
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Package: - |
Request a Quote |
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EEPROM | EEPROM | 16Kbit | Microwire | 2 MHz | 4ms | - | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-SMD, Flat Lead Exposed Pad | HSNT-8-A |
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Fremont Micro Devices Ltd |
IC EEPROM 4KBIT I2C 1MHZ 8SOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kbit
- Memory Interface: I2C
- Clock Frequency: 1 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 550 ns
- Voltage - Supply: 1.8V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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EEPROM | EEPROM | 4Kbit | I2C | 1 MHz | 5ms | 550 ns | 1.8V ~ 5.5V | -40°C ~ 85°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Flexxon Pte Ltd |
IC FLASH 128GBIT EMMC 100FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (MLC)
- Memory Size: 128Gbit
- Memory Interface: eMMC
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-FBGA (14x18)
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Package: - |
Stock300 |
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FLASH | FLASH - NAND (MLC) | 128Gbit | eMMC | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 100-LBGA | 100-FBGA (14x18) |
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Spansion |
4 GB, 3 V, SLC NAND FLASH
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Renesas Electronics Corporation |
IC SRAM
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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GigaDevice Semiconductor (HK) Limited |
IC FLASH 1GBIT SPI/QUAD I/O 8LGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 120 MHz
- Write Cycle Time - Word, Page: 700µs
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VLGA Exposed Pad
- Supplier Device Package: 8-LGA (6x8)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND | 1Gbit | SPI - Quad I/O | 120 MHz | 700µs | - | 1.7V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 8-VLGA Exposed Pad | 8-LGA (6x8) |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PARALLEL 400MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14V ~ 1.95V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 1Gbit | Parallel | 400 MHz | 15ns | - | 1.14V ~ 1.95V | 0°C ~ 85°C (TC) | - | - | - |
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Renesas Electronics Corporation |
IC SRAM
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 17ns
- Access Time: 17 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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Package: - |
Request a Quote |
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SRAM | SRAM - Dual Port, Asynchronous | 8Kbit | Parallel | - | 17ns | 17 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (10x10) |