|
|
Maxim Integrated |
IC SRAM 16K NONVOLATILE 24DIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 120ns
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 24-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 24-DIP
|
Package: 24-DIP Module (0.600", 15.24mm) |
Stock15,900 |
|
NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 120ns | 120ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 24-DIP Module (0.600", 15.24mm) | 24-DIP |
|
|
Adesto Technologies |
IC FLASH 512KBIT 85MHZ 8UDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 512Kb (64K x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 8µs, 3.5ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN (2x3)
|
Package: 8-UFDFN Exposed Pad |
Stock5,376 |
|
FLASH | FLASH | 512Kb (64K x 8) | SPI | 104MHz | 8µs, 3.5ms | - | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
|
|
Micron Technology Inc. |
IC FLASH 256MBIT 85NS 64TBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 52MHz
- Write Cycle Time - Word, Page: 85ns
- Access Time: 85ns
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-TBGA
- Supplier Device Package: 64-TBGA (10x13)
|
Package: 64-TBGA |
Stock3,792 |
|
FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | 52MHz | 85ns | 85ns | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 64-TBGA | 64-TBGA (10x13) |
|
|
Cypress Semiconductor Corp |
IC SRAM 1MBIT 55NS 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP I
|
Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock242,304 |
|
SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP I |
|
|
Micron Technology Inc. |
IC FLASH 4GBIT 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TSOP
- Supplier Device Package: 48-TSOP
|
Package: 48-TSOP |
Stock7,888 |
|
FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TSOP | 48-TSOP |
|
|
Microchip Technology |
IC EEPROM 2KBIT 2MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8, 128 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock69,744 |
|
EEPROM | EEPROM | 2Kb (256 x 8, 128 x 16) | SPI | 2MHz | 10ms | - | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC EEPROM 16KBIT 150NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 200µs
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
|
Package: 32-LCC (J-Lead) |
Stock4,144 |
|
EEPROM | EEPROM | 16Kb (2K x 8) | Parallel | - | 200µs | 150ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
|
|
Microchip Technology |
IC OTP 1MBIT 120NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
|
Package: 32-LCC (J-Lead) |
Stock4,848 |
|
EPROM | EPROM - OTP | 1Mb (128K x 8) | Parallel | - | - | 120ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
|
|
Microchip Technology |
IC OTP 512KBIT 70NS 28SOIC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 512Kb (64K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.342", 8.69mm Width)
- Supplier Device Package: 28-SOIC
|
Package: 28-SOIC (0.342", 8.69mm Width) |
Stock2,384 |
|
EPROM | EPROM - OTP | 512Kb (64K x 8) | Parallel | - | - | 70ns | 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 28-SOIC (0.342", 8.69mm Width) | 28-SOIC |
|
|
Microchip Technology |
IC OTP 2MBIT 90NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
|
Package: 32-LCC (J-Lead) |
Stock4,000 |
|
EPROM | EPROM - OTP | 2Mb (256K x 8) | Parallel | - | - | 90ns | 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 133MHZ 256CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
|
Package: 256-LBGA |
Stock6,992 |
|
SRAM | SRAM - Dual Port, Synchronous | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4.2ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 8KBIT 100NS SB48
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kb (1K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 48-DIP (0.600", 15.24mm)
- Supplier Device Package: 48-SIDE BRAZED
|
Package: 48-DIP (0.600", 15.24mm) |
Stock6,544 |
|
SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 100ns | 100ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TA) | Through Hole | 48-DIP (0.600", 15.24mm) | 48-SIDE BRAZED |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 8KBIT 55NS 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kb (1K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
|
Package: 64-LQFP |
Stock2,544 |
|
SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
|
|
Micron Technology Inc. |
IC SDRAM 256MBIT 200MHZ 60FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-FBGA (8x12.5)
|
Package: 60-TFBGA |
Stock5,632 |
|
DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
|
|
Alliance Memory, Inc. |
IC SRAM 1MBIT 12NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
|
Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock13,104 |
|
SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
|
|
Microchip Technology |
IC EEPROM 32KBIT 10MHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
|
Package: 8-WFDFN Exposed Pad |
Stock3,936 |
|
EEPROM | EEPROM | 32Kb (4K x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
|
|
Microchip Technology |
IC EEPROM 2KBIT 10MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock9,180 |
|
EEPROM | EEPROM | 2Kb (256 x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC EEPROM 1KBIT 10MHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
|
Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock4,800 |
|
EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
Microchip Technology |
IC EEPROM 4KBIT 1MHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (256 x 8 x 2)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 350ns
- Voltage - Supply: 1.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
|
Package: 8-WFDFN Exposed Pad |
Stock7,760 |
|
EEPROM | EEPROM | 4Kb (256 x 8 x 2) | I2C | 1MHz | 5ms | 350ns | 1.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
|
|
Cypress Semiconductor Corp |
IC FRAM MEM SER 4KBIT 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 4Kb (512 x 8)
- Memory Interface: SPI
- Clock Frequency: 16MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock10,128 |
|
FRAM | FRAM (Ferroelectric RAM) | 4Kb (512 x 8) | SPI | 16MHz | - | - | 3 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Micron Technology Inc. |
IC DRAM 12G 1866MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 12Gb (384M x 32)
- Memory Interface: -
- Clock Frequency: 1866MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock7,488 |
|
DRAM | SDRAM - Mobile LPDDR4 | 12Gb (384M x 32) | - | 1866MHz | - | - | 1.1V | -40°C ~ 105°C (TA) | - | - | - |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
|
Package: 165-TBGA |
Stock5,648 |
|
SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 133MHz | - | 6.5ns | 2.375 V ~ 2.625 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 16K PARALLEL 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
|
Package: 64-LQFP |
Stock5,312 |
|
SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
|
|
Micron Technology Inc. |
IC DRAM 576M PARALLEL 1067MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (16M x 36)
- Memory Interface: Parallel
- Clock Frequency: 1067MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock4,800 |
|
DRAM | DRAM | 576Mb (16M x 36) | Parallel | 1067MHz | - | 7.5ns | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | - |
|
|
Fujitsu Semiconductor Memory Solution |
64KBIT FRAM WITH I2C SERIAL INTE
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 64Kbit
- Memory Interface: I2C
- Clock Frequency: 1 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 550 ns
- Voltage - Supply: 3V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Request a Quote |
|
FRAM | FRAM (Ferroelectric RAM) | 64Kbit | I2C | 1 MHz | - | 550 ns | 3V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Infineon Technologies |
IC FLASH 128MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 128Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 80 MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: 6 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (5x6)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 128Mbit | SPI - Quad I/O, QPI | 80 MHz | 2ms | 6 ns | 1.7V ~ 2V | -40°C ~ 125°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (5x6) |
|
|
Renesas Electronics Corporation |
IC SRAM 256KBIT PARALLEL 28SOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 256Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.330", 8.40mm Width)
- Supplier Device Package: 28-SOP
|
Package: - |
Stock3,918 |
|
SRAM | SRAM | 256Kbit | Parallel | - | 55ns | 55 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-SOIC (0.330", 8.40mm Width) | 28-SOP |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 86TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
|
Package: - |
Request a Quote |
|
DRAM | SDRAM | 128Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |