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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 166MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,040 |
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SRAM | SRAM - Synchronous ZBT | 4.5Mb (256K x 18) | Parallel | 166MHz | - | 3.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Cypress Semiconductor Corp |
IC SRAM 72MBIT 250MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 72Mb (4M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
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Package: 165-LBGA |
Stock5,200 |
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SRAM | SRAM - Synchronous, QDR II | 72Mb (4M x 18) | Parallel | 250MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 200MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
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Package: 165-LBGA |
Stock5,664 |
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SRAM | SRAM - Synchronous, QDR II | 36Mb (1M x 36) | Parallel | 200MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 100MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock2,352 |
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SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 100MHz | - | 8.5ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Microchip Technology |
IC EEPROM 64KBIT 200NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 200µs
- Access Time: 200ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock3,184 |
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EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 200µs | 200ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Microchip Technology |
IC EEPROM 256KBIT 150NS 28FLATPK
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 28-CFlatPack
- Supplier Device Package: 28-Flatpack, Ceramic Bottom-Brazed
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Package: 28-CFlatPack |
Stock5,168 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TC) | Surface Mount | 28-CFlatPack | 28-Flatpack, Ceramic Bottom-Brazed |
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IDT, Integrated Device Technology Inc |
IC SRAM 1.125MBIT 6NS 256CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 1.125Mb (64K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
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Package: 256-LBGA |
Stock4,560 |
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SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 6ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
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Micron Technology Inc. |
IC RLDRAM 576MBIT 1.067GHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (16M x 36)
- Memory Interface: Parallel
- Clock Frequency: 1067MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-TBGA
- Supplier Device Package: 168-BGA
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Package: 168-TBGA |
Stock5,312 |
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DRAM | DRAM | 576Mb (16M x 36) | Parallel | 1067MHz | - | 8ns | 1.28 V ~ 1.42 V | -40°C ~ 95°C (TC) | Surface Mount | 168-TBGA | 168-BGA |
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IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 20NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock3,056 |
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SRAM | SRAM - Dual Port, Asynchronous | 1Mb (64K x 16) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC SDRAM 24GBIT 1.6GHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 24Gb (384M x 64)
- Memory Interface: -
- Clock Frequency: 1600MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,040 |
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DRAM | SDRAM - Mobile LPDDR4 | 24Gb (384M x 64) | - | 1600MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC NVSRAM 4MBIT 45NS 48FBGA
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-FBGA (6x10)
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Package: 48-TFBGA |
Stock2,624 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (512K x 8) | Parallel | - | 45ns | 45ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-FBGA (6x10) |
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Cypress Semiconductor Corp |
FLASH MEMORY NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 96ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,128 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | 166MHz | - | 96ns | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | - | - | - |
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Micron Technology Inc. |
IC SDRAM 512MBIT 400MHZ 60FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-FBGA (8x10)
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Package: 60-TFBGA |
Stock3,904 |
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DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | Surface Mount | 60-TFBGA | 60-FBGA (8x10) |
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Micron Technology Inc. |
IC SDRAM 64MBIT 167MHZ 54VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (8x8)
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Package: 54-VFBGA |
Stock6,288 |
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DRAM | SDRAM | 64Mb (4M x 16) | Parallel | 167MHz | 12ns | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-VFBGA | 54-VFBGA (8x8) |
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Micron Technology Inc. |
IC FLASH SER NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8, 32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 95ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-LBGA (11x13)
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Package: 64-LBGA |
Stock2,208 |
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FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 60ns | 95ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
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Microchip Technology |
IC EEPROM 4KBIT 400KHZ 8DFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (256 x 8 x 2)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x3)
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Package: 8-VFDFN Exposed Pad |
Stock6,752 |
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EEPROM | EEPROM | 4Kb (256 x 8 x 2) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (2x3) |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 15NS 28SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 28-SOJ
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Package: 28-BSOJ (0.300", 7.62mm Width) |
Stock12,636 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
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Microchip Technology |
IC EERAM 16K I2C 1MHZ WAFER
- Memory Type: Non-Volatile
- Memory Format: EERAM
- Technology: EEPROM, SRAM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I²C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 1ms
- Access Time: 400ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock5,168 |
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EERAM | EEPROM, SRAM | 16Kb (2K x 8) | I²C | 1MHz | 1ms | 400ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | Die | Die |
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Cypress Semiconductor Corp |
IC FLASH MEM NOR 56TSOPI
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128M (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 60ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock6,800 |
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FLASH | FLASH - NOR | 128M (8M x 16) | Parallel | - | 60ns | 60ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Winbond Electronics |
IC DRAM 2GBIT SSTL 15 78VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 2Gbit
- Memory Interface: SSTL_15
- Clock Frequency: 667 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-VFBGA
- Supplier Device Package: 78-VFBGA (8x10.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3 | 2Gbit | SSTL_15 | 667 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-VFBGA | 78-VFBGA (8x10.5) |
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Macronix |
MEMORY
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 40µs, 3ms
- Access Time: 6 ns
- Voltage - Supply: 1.65V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: 8-USON (4x3)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 64Mbit | SPI - Quad I/O, QPI | 133 MHz | 40µs, 3ms | 6 ns | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 8-UDFN Exposed Pad | 8-USON (4x3) |
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Macronix |
IC FLASH 4GBIT PARALLEL 63VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (9x11)
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Package: - |
Stock4,536 |
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FLASH | FLASH - NAND (SLC) | 4Gbit | Parallel | - | 20ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
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Silicon Motion, Inc. |
IC FLASH 128GBIT EMMC 100BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 128Gbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-BGA (14x18)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (TLC) | 128Gbit | eMMC | - | - | - | - | -40°C ~ 85°C | Surface Mount | 100-LBGA | 100-BGA (14x18) |
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Microchip Technology |
IC FLSH 2MBIT PARALLEL 32TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20µs
- Access Time: 55 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.488", 12.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 2Mbit | Parallel | - | 20µs | 55 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 32-TFSOP (0.488", 12.40mm Width) | 32-TSOP |
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Fujitsu Semiconductor Memory Solution |
256KBIT FRAM WITH SPI, 1.8~3.6V,
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 256Kbit
- Memory Interface: SPI
- Clock Frequency: 33 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 13 ns
- Voltage - Supply: 1.8V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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FRAM | FRAM (Ferroelectric RAM) | 256Kbit | SPI | 33 MHz | - | 13 ns | 1.8V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Micron Technology Inc. |
IC DRAM 64GBIT 3.2GHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR5
- Memory Size: 64Gbit
- Memory Interface: -
- Clock Frequency: 3.2 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.05V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR5 | 64Gbit | - | 3.2 GHz | - | - | 1.05V | -25°C ~ 85°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 256KBIT PARALLEL 24SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 24-SOJ
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 256Kbit | Parallel | - | 20ns | 20 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 24-BSOJ (0.300", 7.62mm Width) | 24-SOJ |
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Winbond Electronics |
IC FLASH 8MBIT SPI/QUAD 104MHZ
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 30µs, 3ms
- Access Time: 6 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 8Mbit | SPI - Quad I/O | 104 MHz | 30µs, 3ms | 6 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | - | - | - |
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