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Alliance Memory, Inc. |
IC SDRAM 128MBIT 166MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 2ns
- Access Time: 5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock2,704 |
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DRAM | SDRAM | 128Mb (8M x 16) | Parallel | 166MHz | 2ns | 5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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Alliance Memory, Inc. |
IC SDRAM 128MBIT 166MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 2ns
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock5,104 |
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DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | 2ns | 5.5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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Renesas Electronics America |
IC SRAM 4MBIT 55NS 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.400", 10.16mm Width)
- Supplier Device Package: 32-TSOP II
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Package: 32-SOIC (0.400", 10.16mm Width) |
Stock5,472 |
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SRAM | SRAM | 4Mb (512K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.400", 10.16mm Width) | 32-TSOP II |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 70NS 32SOIC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.445", 11.30mm Width)
- Supplier Device Package: 32-SOIC
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Package: 32-SOIC (0.445", 11.30mm Width) |
Stock4,544 |
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SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 32-SOIC (0.445", 11.30mm Width) | 32-SOIC |
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Microchip Technology |
IC EEPROM 256KBIT 20MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock2,752 |
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EEPROM | EEPROM | 256Kb (32K x 8) | SPI | 20MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC NVSRAM 256KBIT 100NS 28EDIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 28-EDIP
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Package: 28-DIP Module (0.600", 15.24mm) |
Stock2,640 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 100ns | 100ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
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Microchip Technology |
IC OTP 1MBIT 90NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock4,608 |
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EPROM | EPROM - OTP | 1Mb (128K x 8) | Parallel | - | - | 90ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Microchip Technology |
IC EEPROM 1KBIT 400KHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,368 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 400kHz | 10ms | 900ns | 2.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 1KBIT 400KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock110,460 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 400kHz | 5ms | 900ns | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 10NS 48BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-BGA (6x8)
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Package: 48-TFBGA |
Stock7,072 |
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SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.4 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 48-TFBGA | 48-BGA (6x8) |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 80MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,904 |
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FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI - Quad I/O | 80MHz | - | - | 1.7 V ~ 2 V | -40°C ~ 105°C (TA) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 18KBIT 55NS 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 18Kb (2K x 9)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock5,520 |
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SRAM | SRAM - Dual Port, Asynchronous | 18Kb (2K x 9) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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Cypress Semiconductor Corp |
NAND
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,160 |
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FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | 45ns | 45ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 143MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (2M x 32)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock7,952 |
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DRAM | SDRAM | 64Mb (2M x 32) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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Microchip Technology |
IC EEPROM 1KBIT 3MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8 , 64 x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock3,104 |
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EEPROM | EEPROM | 1Kb (128 x 8 , 64 x 16) | SPI | 3MHz | 6ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC EEPROM 1KBIT 2MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (64 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock61,428 |
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EEPROM | EEPROM | 1Kb (64 x 16) | SPI | 2MHz | 6ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fremont Micro Devices USA |
IC EEPROM 64KBIT 1MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 800kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 700ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock2,000 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 800kHz | 5ms | 700ns | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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STMicroelectronics |
IC EEPROM 2KBIT 1MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8, 128 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock7,600 |
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EEPROM | EEPROM | 2Kb (256 x 8, 128 x 16) | SPI | 2MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Cypress Semiconductor Corp |
IC NVSRAM 64KBIT 40MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 64Kb (8K x 8)
- Memory Interface: SPI
- Clock Frequency: 40MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,104 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | SPI | 40MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Alliance Memory, Inc. |
IC SDRAM 256MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock13,296 |
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DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 166MHz | 12ns | 5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Winbond Electronics |
IC FLASH 32MBIT 104MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
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Package: 8-WDFN Exposed Pad |
Stock42,504 |
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FLASH | FLASH - NOR | 32Mb (4M x 8) | SPI | 104MHz | 5ms | - | 1.65 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x5) |
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Micron Technology Inc. |
IC DRAM 1.125G PARALLEL 1200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 1.125Gb (32Mb x 36)
- Memory Interface: Parallel
- Clock Frequency: 1200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.67ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,384 |
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DRAM | DRAM | 1.125Gb (32Mb x 36) | Parallel | 1200MHz | - | 6.67ns | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC FLASH 256M PARALLEL 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (13x11)
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Package: 64-LBGA |
Stock7,472 |
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FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | - | 60ns | 90ns | 2.7 V ~ 3.6 V | 0°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
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Microchip Technology |
256K 32KX8 2.5V SER EEPROM
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: I²C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock6,832 |
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EEPROM | EEPROM | 256Kb (32K x 8) | I²C | 400kHz | 5ms | 900ns | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT PARALLEL 36VFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 2.7V ~ 3.3V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-VFBGA
- Supplier Device Package: 36-VFBGA (6x8)
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 55ns | 55 ns | 2.7V ~ 3.3V | -40°C ~ 85°C (TA) | Surface Mount | 36-VFBGA | 36-VFBGA (6x8) |
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Everspin Technologies Inc. |
IC RAM 1MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 1Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 40 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
|
Package: - |
Request a Quote |
|
RAM | MRAM (Magnetoresistive RAM) | 1Mbit | SPI - Quad I/O, QPI | 40 MHz | - | 7 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Micron Technology Inc. |
IC DRAM 4GBIT 2.133GHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 4Gbit
- Memory Interface: -
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4 | 4Gbit | - | 2.133 GHz | - | - | 1.1V | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
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Winbond Electronics |
IC DRAM 1GBIT HSUL 12 178VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR3
- Memory Size: 1Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 178-VFBGA
- Supplier Device Package: 178-VFBGA (11x11.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR3 | 1Gbit | HSUL_12 | 933 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 178-VFBGA | 178-VFBGA (11x11.5) |