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Cypress Semiconductor Corp |
IC SRAM 4MBIT 45NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,104 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 200MHZ 165BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock4,240 |
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SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 200MHz | - | 3.1ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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Micron Technology Inc. |
IC SDRAM 4GBIT 800MHZ 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: -
- Access Time: 13.75ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x14)
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Package: 96-TFBGA |
Stock2,224 |
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DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 800MHz | - | 13.75ns | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x14) |
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Winbond Electronics |
IC SDRAM 256MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock9,468 |
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DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 166MHz | - | 5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Cypress Semiconductor Corp |
IC SRAM 72MBIT 500MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II+
- Memory Size: 72Mb (4M x 18)
- Memory Interface: Parallel
- Clock Frequency: 500MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock4,944 |
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SRAM | SRAM - Synchronous, DDR II+ | 72Mb (4M x 18) | Parallel | 500MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 12NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock2,208 |
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SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 15NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock3,104 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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Microchip Technology |
IC EEPROM 16KBIT 150NS 24SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 1ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 24-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 24-SOIC
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Package: 24-SOIC (0.295", 7.50mm Width) |
Stock172,500 |
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EEPROM | EEPROM | 16Kb (2K x 8) | Parallel | - | 1ms | 150ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 24-SOIC (0.295", 7.50mm Width) | 24-SOIC |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 55NS 80TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-LQFP
- Supplier Device Package: 80-TQFP (14x14)
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Package: 80-LQFP |
Stock5,552 |
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SRAM | SRAM - Dual Port, Asynchronous | 256Kb (32K x 8) | Parallel | - | 55ns | 55ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 80-LQFP | 80-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 32KBIT 45NS 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 32Kb (4K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock7,184 |
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SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 45ns | 45ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock3,520 |
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DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Cypress Semiconductor Corp |
IC FLASH 64MBIT 110NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8, 4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 110ns
- Access Time: 110ns
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-Fortified BGA (13x11)
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Package: 64-LBGA |
Stock7,376 |
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FLASH | FLASH - NOR | 64Mb (8M x 8, 4M x 16) | Parallel | - | 110ns | 110ns | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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Micron Technology Inc. |
IC FLASH 4MBIT 70NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mb (512K x 8, 256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock7,072 |
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FLASH | FLASH - NOR | 4Mb (512K x 8, 256K x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 15NS 48FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-FBGA (7x7)
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Package: 48-TFBGA |
Stock4,352 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-FBGA (7x7) |
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Microchip Technology |
IC EEPROM 64KBIT 2MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock168,912 |
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EEPROM | EEPROM | 64Kb (8K x 8) | SPI | 2MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC FLASH 32M SPI 108MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock14,076 |
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FLASH | FLASH - NOR | 32Mb (4M x 8) | SPI - Quad I/O | 108MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Rohm Semiconductor |
IC EEPROM 1K SPI 10MHZ 8TSSOPB
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 4ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP-B
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock26,076 |
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EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 10MHz | 4ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP-B |
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Micron Technology Inc. |
IC FLASH 1G SPI 133MHZ 24TPBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 8ms, 2.8ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-T-PBGA (6x8)
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Package: 24-TBGA |
Stock7,584 |
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FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-T-PBGA (6x8) |
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Micron Technology Inc. |
IC FLASH 128G MMC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 169-TFBGA
- Supplier Device Package: 169-TFBGA (14x18)
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Package: 169-TFBGA |
Stock5,696 |
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FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 169-TFBGA | 169-TFBGA (14x18) |
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Cypress Semiconductor Corp |
IC SRAM
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,064 |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock22,800 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
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Micron Technology Inc. |
IC DRAM LPDDR4 FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 12Gb (384M x 32)
- Memory Interface: -
- Clock Frequency: 1.866GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 0.6V, 1.1V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,136 |
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DRAM | SDRAM - Mobile LPDDR4 | 12Gb (384M x 32) | - | 1.866GHz | - | - | 0.6V, 1.1V | -40°C ~ 95°C (TC) | Surface Mount | - | - |
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Samsung |
SRAM ASYNC SLOW 4M 512Kx8 5V 32-
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: -
- Voltage - Supply: 5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: 32-SOP
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 55ns | - | 5V | 0°C ~ 70°C (TA) | Surface Mount | - | 32-SOP |
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Micron Technology Inc. |
LPDDR4 128G X64 LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 128Gbit
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 556-LFBGA
- Supplier Device Package: 556-LFBGA (12.4x12.4)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4X | 128Gbit | Parallel | 2.133 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Surface Mount | 556-LFBGA | 556-LFBGA (12.4x12.4) |
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Winbond Electronics |
IC FLASH 1GBIT SPI/QUAD 24TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 700µs
- Access Time: 7 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (8x6)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 1Gbit | SPI - Quad I/O | 104 MHz | 700µs | 7 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (8x6) |
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Micron Technology Inc. |
IC SRAM 18MBIT PAR 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, ZBT
- Memory Size: 18Mbit
- Memory Interface: Parallel
- Clock Frequency: 113 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20.1)
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Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous, ZBT | 18Mbit | Parallel | 113 MHz | - | 6.5 ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20.1) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: - |
Request a Quote |
|
DRAM | SDRAM | 128Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Texas Instruments |
CACHE TAG SRAM, 512X8, 20NS
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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