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Adesto Technologies |
IC FLASH 8MBIT 50MHZ 8VDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 8Mb (264 Bytes x 4096 pages)
- Memory Interface: SPI
- Clock Frequency: 50MHz
- Write Cycle Time - Word, Page: 4ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-VDFN (6x5)
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Package: 8-VDFN Exposed Pad |
Stock6,240 |
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FLASH | FLASH | 8Mb (264 Bytes x 4096 pages) | SPI | 50MHz | 4ms | - | 2.5 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-VDFN Exposed Pad | 8-VDFN (6x5) |
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Cypress Semiconductor Corp |
IC SRAM 8KBIT 25NS 52QFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kb (1K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-BQFP
- Supplier Device Package: 52-PQFP (10x10)
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Package: 52-BQFP |
Stock4,352 |
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SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-BQFP | 52-PQFP (10x10) |
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Renesas Electronics America |
IC EEPROM 2KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock6,912 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 5ms | 900ns | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 15NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock2,272 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 7.5NS 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BGA |
Stock6,816 |
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SRAM | SRAM - Synchronous ZBT | 4.5Mb (128K x 36) | Parallel | - | - | 7.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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Microchip Technology |
IC FLASH 8MBIT 70NS 48CBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 120µs
- Access Time: 70ns
- Voltage - Supply: 2.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA, CSBGA
- Supplier Device Package: 48-CBGA (6x8)
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Package: 48-VFBGA, CSBGA |
Stock2,976 |
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FLASH | FLASH | 8Mb (512K x 16) | Parallel | - | 120µs | 70ns | 2.65 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 48-VFBGA, CSBGA | 48-CBGA (6x8) |
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Microchip Technology |
IC FLASH 8MBIT 33MHZ 32TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 8Mb (1M x 8)
- Memory Interface: Parallel
- Clock Frequency: 33MHz
- Write Cycle Time - Word, Page: 300µs
- Access Time: -
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock15,252 |
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FLASH | FLASH | 8Mb (1M x 8) | Parallel | 33MHz | 300µs | - | 3 V ~ 3.6 V | 0°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Micron Technology Inc. |
IC SDRAM 256MBIT 133MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 14ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock4,208 |
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DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 133MHz | 14ns | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8MBIT 45NS 48MBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
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Package: 48-VFBGA |
Stock4,032 |
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SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
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Alliance Memory, Inc. |
IC SRAM 1MBIT 10NS 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP I
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock4,896 |
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SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP I |
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Cypress Semiconductor Corp |
IC SRAM 4MB 10NS 44SOIC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock7,504 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 256KBIT 45NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock99,996 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 45ns | 45ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
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Adesto Technologies |
IC EEPROM 64KBIT 1MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64kb (32B Page Size)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 100µs, 1.2ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock118,266 |
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EEPROM | EEPROM | 64kb (32B Page Size) | I2C | 1MHz | 100µs, 1.2ms | - | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC FLASH 128MBIT 133MHZ 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (6x8)
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Package: 24-TBGA |
Stock18,924 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-BGA (6x8) |
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Microchip Technology |
IC EEPROM 16K SPI 3MHZ WAFER
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8, 1K x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock5,952 |
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EEPROM | EEPROM | 16Kb (2K x 8, 1K x 16) | SPI | 3MHz | 2ms | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | Die | Die |
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Microchip Technology |
IC EEPROM 1K SPI 2MHZ WAFER
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock2,976 |
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EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 2MHz | 2ms | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
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ON Semiconductor |
IC EEPROM 4K SPI 1MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (256 x 16)
- Memory Interface: SPI
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,696 |
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EEPROM | EEPROM | 4Kb (256 x 16) | SPI | 1MHz | 10ms | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Macronix |
IC FLASH 128MBIT
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,992 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Cypress Semiconductor Corp |
IC MEMORY NOR
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock15,468 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC FLASH 128G MMC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,280 |
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FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | - | - | - |
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Micron Technology Inc. |
IC DRAM 576M PARALLEL 1067MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 576Mb (32M x 18)
- Memory Interface: Parallel
- Clock Frequency: 1067MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 1.28 V ~ 1.42 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,456 |
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DRAM | DRAM | 576Mb (32M x 18) | Parallel | 1067MHz | - | 7.5ns | 1.28 V ~ 1.42 V | 0°C ~ 95°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 256KBIT PAR 28TSOP I
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 256Kbit | Parallel | - | 15ns | 15 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
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Renesas Electronics Corporation |
IC RAM DUAL PORT
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: - |
Request a Quote |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kbit | Parallel | - | 12ns | 12 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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Micron Technology Inc. |
IC DRAM 4GBIT 2.133GHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 4Gbit
- Memory Interface: -
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4 | 4Gbit | - | 2.133 GHz | - | - | 1.1V | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
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GigaDevice Semiconductor (HK) Limited |
IC FLASH 64MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 70µs, 2.4ms
- Access Time: 7 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (5x6)
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Package: - |
Stock42,228 |
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FLASH | FLASH - NOR | 64Mbit | SPI - Quad I/O | 133 MHz | 70µs, 2.4ms | 7 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (5x6) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 576MBIT PAR 168FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: RLDRAM 3
- Memory Size: 576Mbit
- Memory Interface: Parallel
- Clock Frequency: 1.066 GHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5 ns
- Voltage - Supply: 1.28V ~ 1.42V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-LBGA
- Supplier Device Package: 168-FBGA (13.5x13.5)
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Package: - |
Stock357 |
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DRAM | RLDRAM 3 | 576Mbit | Parallel | 1.066 GHz | - | 7.5 ns | 1.28V ~ 1.42V | 0°C ~ 95°C (TC) | Surface Mount | 168-LBGA | 168-FBGA (13.5x13.5) |
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ISSI, Integrated Silicon Solution Inc |
4Mb QSPI, 8-pin SOP 208Mil, RoHS
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 4Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 40µs, 1.2ms
- Access Time: 8 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 4Mbit | SPI - Quad I/O, QPI | 104 MHz | 40µs, 1.2ms | 8 ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC PSRAM 8MBIT SPI QPI 8SOIC
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 8Mbit
- Memory Interface: SPI, QPI
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7 ns
- Voltage - Supply: 1.65V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock1,164 |
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PSRAM | PSRAM (Pseudo SRAM) | 8Mbit | SPI, QPI | 104 MHz | - | 7 ns | 1.65V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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