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ON Semiconductor |
IC EEPROM 16KBIT 400KHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock5,088 |
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EEPROM | EEPROM | 16Kb (2K x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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STMicroelectronics |
IC EEPROM 512KBIT 1MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 512Kb (64K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 500ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,816 |
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EEPROM | EEPROM | 512Kb (64K x 8) | I2C | 1MHz | 10ms | 500ns | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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IDT, Integrated Device Technology Inc |
IC SRAM 18MBIT 167MHZ 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.4ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
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Package: 165-TBGA |
Stock6,048 |
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SRAM | SRAM - Synchronous, QDR II | 18Mb (512K x 36) | Parallel | 167MHz | - | 8.4ns | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
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Cypress Semiconductor Corp |
IC NVSRAM 256KBIT 25NS 48SSOP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package: 48-SSOP
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Package: 48-BSSOP (0.295", 7.50mm Width) |
Stock3,120 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 25ns | 25ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-BSSOP (0.295", 7.50mm Width) | 48-SSOP |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 167MHZ 256FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 18Mb (256K x 72)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4ns
- Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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Package: 256-LBGA |
Stock3,856 |
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SRAM | SRAM - Dual Port, Synchronous | 18Mb (256K x 72) | Parallel | 167MHz | - | 4ns | 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-FBGA (17x17) |
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Micron Technology Inc. |
IC SDRAM 1GBIT 266MHZ 92FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 267MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 92-VFBGA
- Supplier Device Package: 92-FBGA (11x19)
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Package: 92-VFBGA |
Stock7,472 |
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DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 267MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | Surface Mount | 92-VFBGA | 92-FBGA (11x19) |
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Microchip Technology |
IC FLASH 1MBIT 90NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 50µs
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock5,232 |
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FLASH | FLASH | 1Mb (128K x 8) | Parallel | - | 50µs | 90ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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IDT, Integrated Device Technology Inc |
IC SRAM 2MBIT 133MHZ 256CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 2Mb (128K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
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Package: 256-LBGA |
Stock3,568 |
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SRAM | SRAM - Dual Port, Synchronous | 2Mb (128K x 18) | Parallel | 133MHz | - | 4.2ns | 3.15 V ~ 3.45 V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
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IDT, Integrated Device Technology Inc |
IC SRAM 1.125MBIT 6NS 208CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 1.125Mb (32K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-LFBGA
- Supplier Device Package: 208-CABGA (15x15)
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Package: 208-LFBGA |
Stock5,328 |
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SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 6ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 25NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (8K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,752 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC FLASH 512MBIT 108MHZ 8VPDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (128M x 4)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-VDFPN (MLP8) (8x6)
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Package: 8-VDFN Exposed Pad |
Stock4,240 |
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FLASH | FLASH - NOR | 512Mb (128M x 4) | SPI | 108MHz | 8ms, 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-VDFN Exposed Pad | 8-VDFPN (MLP8) (8x6) |
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Micron Technology Inc. |
IC FLASH 1GBIT 64EASYBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8, 64M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 95ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-LBGA (11x13)
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Package: 64-LBGA |
Stock7,504 |
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FLASH | FLASH - NOR | 1Gb (128M x 8, 64M x 16) | Parallel | - | 60ns | 95ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
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Micron Technology Inc. |
IC FLASH 128MBIT 75NS 64EASYBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8, 8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 75ns
- Access Time: 75ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-TBGA
- Supplier Device Package: 64-EasyBGA (10x13)
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Package: 64-TBGA |
Stock2,128 |
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FLASH | FLASH - NOR | 128Mb (16M x 8, 8M x 16) | Parallel | - | 75ns | 75ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-TBGA | 64-EasyBGA (10x13) |
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Microchip Technology |
IC EEPROM 4KBIT 3MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8, 256 x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,432 |
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EEPROM | EEPROM | 4Kb (512 x 8, 256 x 16) | SPI | 3MHz | 6ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 1KBIT 2MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (64 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock16,800 |
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EEPROM | EEPROM | 1Kb (64 x 16) | SPI | 2MHz | 2ms | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Cypress Semiconductor Corp |
IC FLASH 2GBIT 45NS 63BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-BGA (11x9)
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Package: 63-VFBGA |
Stock4,000 |
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FLASH | FLASH - NAND | 2Gb (128M x 16) | Parallel | - | 45ns | 45ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-BGA (11x9) |
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Microchip Technology |
IC EEPROM 1KBIT 1MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8, 64 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock19,236 |
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EEPROM | EEPROM | 1Kb (128 x 8, 64 x 16) | SPI | 2MHz | 10ms | - | 2.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 250MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock6,588 |
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SRAM | SRAM - Synchronous, QDR II | 18Mb (512K x 36) | Parallel | 250MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Microchip Technology |
IC EEPROM 512KBIT 1MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 512Kb (64K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 400ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,900 |
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EEPROM | EEPROM | 512Kb (64K x 8) | I2C | 1MHz | 5ms | 400ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Renesas Electronics America |
IC EEPROM 256K PARALLEL 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 5ms
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC (11.43x13.97)
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Package: 32-LCC (J-Lead) |
Stock6,064 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 5ms | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (11.43x13.97) |
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Macronix |
IC FLASH 512KBIT
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,864 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
SLC 4G DIE 512MX8
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,816 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 1M PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock3,376 |
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SRAM | SRAM - Dual Port, Asynchronous | 1Mb (64K x 16) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Microchip Technology |
5MHZ AUTO GRADE1 8-UDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: SPI
- Clock Frequency: 5MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock5,152 |
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EEPROM | EEPROM | 256Kb (32K x 8) | SPI | 5MHz | 5ms | - | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
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Micron Technology Inc. |
USSD 512G
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 512Gbit
- Memory Interface: eMMC_5.1
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-VFBGA
- Supplier Device Package: 153-VFBGA (11.5x13)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 512Gbit | eMMC_5.1 | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1GBIT PARALLEL 96TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 115°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3 | 1Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 115°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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Winbond Electronics |
IC DRAM 1GBIT SSTL 15 96VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gbit
- Memory Interface: SSTL_15
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-VFBGA
- Supplier Device Package: 96-VFBGA (7.5x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3 | 1Gbit | SSTL_15 | 933 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-VFBGA | 96-VFBGA (7.5x13) |