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Micron Technology Inc. |
IC RLDRAM 288MBIT 400MHZ 144UBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 288Mb (16M x 18)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 144-TFBGA
- Supplier Device Package: 144-µBGA (18.5x11)
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Package: 144-TFBGA |
Stock6,672 |
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DRAM | DRAM | 288Mb (16M x 18) | Parallel | 400MHz | - | 20ns | 1.7 V ~ 1.9 V | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
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Alliance Memory, Inc. |
IC SDRAM 128MBIT 166MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 2ns
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock36,000 |
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DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | 2ns | 5.5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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Microchip Technology |
IC FLASH 2MBIT 45NS 48TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20µs
- Access Time: 45ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-TFBGA
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Package: 48-TFBGA |
Stock2,832 |
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FLASH | FLASH | 2Mb (128K x 16) | Parallel | - | 20µs | 45ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA |
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ON Semiconductor |
IC FLASH 2MBIT 120NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 120ns
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC (11.43x13.97)
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Package: 32-LCC (J-Lead) |
Stock6,128 |
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FLASH | FLASH | 2Mb (256K x 8) | Parallel | - | 120ns | 120ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (11.43x13.97) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 20NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock2,480 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Microchip Technology |
IC FLASH 64MBIT 70NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15µs
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock2,000 |
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FLASH | FLASH | 64Mb (4M x 16) | Parallel | - | 15µs | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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Microchip Technology |
IC EEPROM 128KBIT 2.1MHZ 8DBGA
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: SPI
- Clock Frequency: 2.1MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VFBGA
- Supplier Device Package: 8-dBGA (4.07x2.47)
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Package: 8-VFBGA |
Stock5,744 |
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EEPROM | EEPROM | 128Kb (16K x 8) | SPI | 2.1MHz | 10ms | - | 1.8 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-VFBGA | 8-dBGA (4.07x2.47) |
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Microchip Technology |
IC FLASH 1MBIT 20MHZ 14TSSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (264 Bytes x 512 pages)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 15ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 14-TSSOP
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Package: 14-TSSOP (0.173", 4.40mm Width) |
Stock29,064 |
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FLASH | FLASH | 1Mb (264 Bytes x 512 pages) | SPI | 20MHz | 15ms | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TC) | Surface Mount | 14-TSSOP (0.173", 4.40mm Width) | 14-TSSOP |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 12NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,100 |
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SRAM | SRAM - Dual Port, Synchronous | 256Kb (32K x 8) | Parallel | - | - | 12ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 36KBIT 25NS 80TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 36Kb (4K x 9)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-LQFP
- Supplier Device Package: 80-TQFP (14x14)
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Package: 80-LQFP |
Stock3,136 |
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SRAM | SRAM - Dual Port, Synchronous | 36Kb (4K x 9) | Parallel | - | - | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 80-LQFP | 80-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
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Package: 165-TBGA |
Stock5,904 |
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SRAM | SRAM - Synchronous ZBT | 9Mb (256K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
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Micron Technology Inc. |
IC SDRAM 128MBIT 166MHZ 90VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-VFBGA (8x13)
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Package: 90-VFBGA |
Stock6,048 |
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DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 167MHz | 12ns | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (8x13) |
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Cypress Semiconductor Corp |
F-RAM MEMORY SERIAL
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 16Kb (2K x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,840 |
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FRAM | FRAM (Ferroelectric RAM) | 16Kb (2K x 8) | SPI | 20MHz | - | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | - | - | - |
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Microchip Technology |
IC EEPROM 16KBIT 10MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,112 |
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EEPROM | EEPROM | 16Kb (2K x 8) | SPI | 10MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC EEPROM 256KBIT 150NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 3ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock6,864 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 150ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Micron Technology Inc. |
IC DRAM 16G 1600MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 16Gb (512M x 32)
- Memory Interface: -
- Clock Frequency: 1600MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,936 |
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DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 1600MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC FLASH 512M SPI 133MHZ 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock5,520 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock5,760 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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Microchip Technology |
2KB I2C EEPROM 1MHZ 1.7-5.5V 8-P
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I²C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 450ns
- Voltage - Supply: 1.7V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock7,088 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I²C | 1MHz | 5ms | 450ns | 1.7V ~ 5.5V | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Winbond Electronics |
IC DRAM 512MBIT HSUL 12 134VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4B
- Memory Size: 512Mbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR2-S4B | 512Mbit | HSUL_12 | 533 MHz | 15ns | - | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -25°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
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Infineon Technologies |
IC FLASH 8GBIT PARALLEL 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 8Gbit | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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Insignis Technology Corporation |
SDR 64MB X16 BGA 8X8(X1.2) PC200
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mbit
- Memory Interface: LVTTL
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.5 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-FBGA (8x8)
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Package: - |
Request a Quote |
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DRAM | SDRAM | 64Mbit | LVTTL | 200 MHz | - | 4.5 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-FBGA (8x8) |
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Renesas Electronics Corporation |
IC RAM 4MBIT 108MHZ 8DFN
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 4Mbit
- Memory Interface: -
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x6)
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Package: - |
Request a Quote |
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RAM | MRAM (Magnetoresistive RAM) | 4Mbit | - | 108 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (5x6) |
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Infineon Technologies |
IC FLASH 64MBIT PARALLEL 56FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-VFBGA
- Supplier Device Package: 56-FBGA (9x7)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 64Mbit | Parallel | - | 70ns | 70 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 56-VFBGA | 56-FBGA (9x7) |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +105C), 8
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 8Gbit
- Memory Interface: LVSTL
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
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Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4X | 8Gbit | LVSTL | 1.6 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
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Micron Technology Inc. |
TLC 8T 1TX8 FBGA 16DP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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GigaDevice Semiconductor (HK) Limited |
IC FLASH 32MBIT SPI/QUAD 8USON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 32Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 100µs, 4ms
- Access Time: 6 ns
- Voltage - Supply: 1.65V ~ 2V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: 8-USON (3x4)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 32Mbit | SPI - Quad I/O, QPI | 133 MHz | 100µs, 4ms | 6 ns | 1.65V ~ 2V | -40°C ~ 125°C (TA) | Surface Mount | 8-UDFN Exposed Pad | 8-USON (3x4) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR2-S4 | 4Gbit | HSUL_12 | 400 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |