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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 16MBIT 143MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (6.4x10.1)
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Package: 60-TFBGA |
Stock4,880 |
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DRAM | SDRAM | 16Mb (1M x 16) | Parallel | 143MHz | - | 5.5ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (6.4x10.1) |
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Micron Technology Inc. |
IC FLASH 16GBIT 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 16Gb (2G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock5,040 |
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FLASH | FLASH - NAND | 16Gb (2G x 8) | Parallel | - | 25ns | 25ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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Cypress Semiconductor Corp |
IC SRAM 72MBIT 300MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 72Mb (4M x 18)
- Memory Interface: Parallel
- Clock Frequency: 300MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock2,528 |
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SRAM | SRAM - Synchronous, QDR II | 72Mb (4M x 18) | Parallel | 300MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
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Package: 165-TBGA |
Stock6,896 |
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SRAM | SRAM - Synchronous ZBT | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
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Cypress Semiconductor Corp |
IC SRAM 256KBIT 20NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock7,600 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
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Micron Technology Inc. |
IC PSRAM 64MBIT 70NS 54VFBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (6x8)
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Package: 54-VFBGA |
Stock4,528 |
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PSRAM | PSRAM (Pseudo SRAM) | 64Mb (4M x 16) | Parallel | - | 70ns | 70ns | 1.7 V ~ 1.95 V | -30°C ~ 85°C (TC) | Surface Mount | 54-VFBGA | 54-VFBGA (6x8) |
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Microchip Technology |
IC EEPROM 1KBIT 20MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,592 |
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EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 20MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC EEPROM 64KBIT 200NS 28DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 1ms
- Access Time: 200ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-PDIP
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Package: 28-DIP (0.600", 15.24mm) |
Stock3,216 |
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EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 1ms | 200ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 133MHZ 208CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-LFBGA
- Supplier Device Package: 208-CABGA (15x15)
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Package: 208-LFBGA |
Stock2,016 |
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SRAM | SRAM - Dual Port, Synchronous | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4.2ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 150MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 150MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock7,936 |
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SRAM | SRAM - Synchronous | 9Mb (512K x 18) | Parallel | 150MHz | - | 3.8ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 8.5NS 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 8.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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Package: 119-BGA |
Stock2,576 |
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SRAM | SRAM - Synchronous ZBT | 9Mb (256K x 36) | Parallel | - | - | 8.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 133MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock7,728 |
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DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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Micron Technology Inc. |
IC FLASH 256GBIT 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 256Gb (32G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,368 |
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FLASH | FLASH - NAND | 256Gb (32G x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 25NS 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock2,000 |
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SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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Rohm Semiconductor |
IC EEPROM 128KBIT 400KHZ VCSP50L
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 11-UFBGA, CSPBGA
- Supplier Device Package: 11-VCSP50L2 (2.44x1.99)
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Package: 11-UFBGA, CSPBGA |
Stock6,704 |
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EEPROM | EEPROM | 128Kb (16K x 8) | I2C | 400kHz | 5ms | - | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 11-UFBGA, CSPBGA | 11-VCSP50L2 (2.44x1.99) |
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Rohm Semiconductor |
IC EEPROM 32KBIT 3MHZ 8SOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,232 |
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EEPROM | EEPROM | 32Kb (4K x 8) | SPI | 3MHz | 5ms | - | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 8KBIT 10MHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (1K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock5,328 |
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EEPROM | EEPROM | 8Kb (1K x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Adesto Technologies |
IC FLASH 512KBIT 104MHZ 8UDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 512Kb (64K x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 12µs, 3ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock3,952 |
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FLASH | FLASH | 512Kb (64K x 8) | SPI | 104MHz | 12µs, 3ms | - | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
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Micron Technology Inc. |
IC DRAM 12G 2133MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 12Gb (384M x 32)
- Memory Interface: -
- Clock Frequency: 2133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -40°C ~ 125°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,680 |
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DRAM | SDRAM - Mobile LPDDR4 | 12Gb (384M x 32) | - | 2133MHz | - | - | 1.1V | -40°C ~ 125°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC FLASH 1G SPI 80MHZ 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Package: 24-TBGA |
Stock4,944 |
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FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI - Quad I/O | 66MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-BGA (8x6) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 1G PARALLEL 48TSOP I
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock3,888 |
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FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Cypress Semiconductor Corp |
IC FLASH MEM NOR 84MCP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,136 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC DRAM 32G 1600MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 32Gb (1G x 32)
- Memory Interface: -
- Clock Frequency: 1600MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock4,032 |
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DRAM | SDRAM - Mobile LPDDR4 | 32Gb (1G x 32) | - | 1600MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Micron Technology Inc. |
IC DRAM 64G PARALLEL 1200MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 64Gb (1G x 64)
- Memory Interface: Parallel
- Clock Frequency: 1200MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.2V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,120 |
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DRAM | SDRAM - DDR4 | 64Gb (1G x 64) | Parallel | 1200MHz | - | - | 1.2V | 0°C ~ 95°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 9MBIT PAR 150MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mbit
- Memory Interface: Parallel
- Clock Frequency: 150 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: - |
Request a Quote |
|
SRAM | SRAM - Synchronous, SDR | 9Mbit | Parallel | 150 MHz | - | 3.5 ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Winbond Electronics |
IC DRAM 256MBIT LVCMOS 54VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 256Mbit
- Memory Interface: LVCMOS
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-VFBGA (8x9)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPSDR | 256Mbit | LVCMOS | 133 MHz | 15ns | 5.4 ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 54-TFBGA | 54-VFBGA (8x9) |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT PARALLEL 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.465", 11.80mm Width)
- Supplier Device Package: 32-TSOP
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 1Mbit | Parallel | - | 55ns | 55 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 32-TFSOP (0.465", 11.80mm Width) | 32-TSOP |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT PARALLEL 32SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 32-SOJ
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 20ns | 20 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 32-BSOJ (0.400", 10.16mm Width) | 32-SOJ |