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Micron Technology Inc. |
LPDDR2 30NM
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 2Gb (64M x 32)
- Memory Interface: Parallel
- Clock Frequency: 533MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.3 V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-TFBGA
- Supplier Device Package: 168-FBGA (12x12)
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Package: 168-TFBGA |
Stock4,448 |
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DRAM | SDRAM - Mobile LPDDR2 | 2Gb (64M x 32) | Parallel | 533MHz | - | - | 1.14 V ~ 1.3 V | -25°C ~ 85°C (TC) | Surface Mount | 168-TFBGA | 168-FBGA (12x12) |
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Cypress Semiconductor Corp |
IC FLASH 1GBIT 110NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 110ns
- Access Time: 110ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-Fortified BGA (13x11)
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Package: 64-LBGA |
Stock6,948 |
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FLASH | FLASH - NOR | 1Gb (128M x 8) | Parallel | - | 110ns | 110ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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Cypress Semiconductor Corp |
IC SRAM 72MBIT 167MHZ 209FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 72Mb (1M x 72)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.4ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 209-BGA
- Supplier Device Package: 209-FBGA (14x22)
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Package: 209-BGA |
Stock3,488 |
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SRAM | SRAM - Synchronous | 72Mb (1M x 72) | Parallel | 167MHz | - | 3.4ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 209-BGA | 209-FBGA (14x22) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 8.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 8.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,472 |
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SRAM | SRAM - Synchronous | 4.5Mb (256K x 18) | Parallel | - | - | 8.5ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC FLASH 32MBIT 110NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 32Mb (4M x 8, 2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 110ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP I
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock7,280 |
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FLASH | FLASH | 32Mb (4M x 8, 2M x 16) | Parallel | - | - | 110ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP I |
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Micron Technology Inc. |
IC SDRAM 256MBIT 167MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock6,448 |
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DRAM | SDRAM - DDR | 256Mb (32M x 8) | Parallel | 167MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Microchip Technology |
IC EEPROM 2KBIT 400KHZ 8MAP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: 8-MAP (3x4.9)
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Package: 8-UDFN Exposed Pad |
Stock6,132 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 5ms | 900ns | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UDFN Exposed Pad | 8-MAP (3x4.9) |
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Microchip Technology |
IC EEPROM 64KBIT 120NS 28DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 200µs
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-PDIP
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Package: 28-DIP (0.600", 15.24mm) |
Stock33,360 |
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EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 200µs | 120ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
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Microchip Technology |
IC OTP 4MBIT 120NS 32VSOP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 120ns
- Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.488", 12.40mm Width)
- Supplier Device Package: 32-VSOP
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Package: 32-TFSOP (0.488", 12.40mm Width) |
Stock2,704 |
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EPROM | EPROM - OTP | 4Mb (512K x 8) | Parallel | - | - | 120ns | 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.488", 12.40mm Width) | 32-VSOP |
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Cypress Semiconductor Corp |
IC NVSRAM 16MBIT 25NS 165BGA
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
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Package: 165-LBGA |
Stock5,136 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Mb (1M x 16) | Parallel | - | 25ns | 25ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
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IDT, Integrated Device Technology Inc |
IC SRAM 144KBIT 7.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 144Kb (8K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock7,536 |
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SRAM | SRAM - Dual Port, Synchronous | 144Kb (8K x 18) | Parallel | - | - | 7.5ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 150MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 150MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,424 |
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SRAM | SRAM - Synchronous ZBT | 9Mb (256K x 36) | Parallel | 150MHz | - | 3.8ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock11,340 |
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SRAM | SRAM - Synchronous | 9Mb (512K x 18) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 143MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TWBGA (13x8)
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Package: 54-TFBGA |
Stock6,816 |
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DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TFBGA | 54-TWBGA (13x8) |
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Microchip Technology |
IC FLASH 64MBIT 104MHZ 8SOIJ
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 64Mb (8M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 1.5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIJ
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock5,488 |
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FLASH | FLASH | 64Mb (8M x 8) | SPI - Quad I/O | 104MHz | 1.5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ |
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Alliance Memory, Inc. |
IC SRAM 256KBIT 15NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock5,184 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 55NS 32STSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LFSOP (0.465", 11.80mm Width)
- Supplier Device Package: 32-sTSOP I
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Package: 32-LFSOP (0.465", 11.80mm Width) |
Stock5,328 |
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SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 55ns | 55ns | 2.5 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 32-LFSOP (0.465", 11.80mm Width) | 32-sTSOP I |
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ON Semiconductor |
IC EEPROM 8KBIT 10MHZ 8UDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (1K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN-EP (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock3,360 |
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EEPROM | EEPROM | 8Kb (1K x 8) | SPI | 10MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN-EP (2x3) |
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Renesas Electronics America |
IC EEPROM 256K PARALLEL 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 5ms
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC (11.43x13.97)
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Package: 32-LCC (J-Lead) |
Stock7,056 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 5ms | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (11.43x13.97) |
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Cypress Semiconductor Corp |
IC 128 MB FLASH MEMORY
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Package: 24-TBGA |
Stock2,192 |
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- | - | - | - | - | - | - | - | - | Surface Mount | 24-TBGA | 24-BGA (8x6) |
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Cypress Semiconductor Corp |
IC FLASH 256M SPI 133MHZ 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Package: 24-TBGA |
Stock6,108 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-BGA (8x6) |
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Micron Technology Inc. |
IC FLASH 64G PARALLEL DIE
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 64Gb (8G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,120 |
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FLASH | FLASH - NAND | 64Gb (8G x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | - | - | - |
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Fairchild Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kbit
- Memory Interface: I2C
- Clock Frequency: 100 kHz
- Write Cycle Time - Word, Page: 15ms
- Access Time: 3.5 µs
- Voltage - Supply: 2.7V ~ 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: - |
Request a Quote |
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EEPROM | EEPROM | 8Kbit | I2C | 100 kHz | 15ms | 3.5 µs | 2.7V ~ 4.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Cypress Semiconductor Corp |
CY7C025 - 3.3V 8K X 16 DUAL-PORT
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: - |
Request a Quote |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kbit | Parallel | - | 25ns | 25 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
MM20F EMMC 512GBIT 153/196 LFBGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR2-S4 | 4Gbit | HSUL_12 | 400 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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Silicon Motion, Inc. |
IC FLASH 256GBIT EMMC 100BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 256Gbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-BGA (14x18)
|
Package: - |
Request a Quote |
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FLASH | FLASH - NAND (TLC) | 256Gbit | eMMC | - | - | - | - | -25°C ~ 85°C | Surface Mount | 100-LBGA | 100-BGA (14x18) |