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Micron Technology Inc. |
IC FLASH 64MBIT 70NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8, 4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock5,072 |
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FLASH | FLASH - NOR | 64Mb (8M x 8, 4M x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 7.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock7,664 |
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SRAM | SRAM - Synchronous ZBT | 4.5Mb (256K x 18) | Parallel | - | - | 7.5ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 18MBIT 133MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock3,744 |
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SRAM | SRAM - Synchronous ZBT | 18Mb (1M x 18) | Parallel | 133MHz | - | 4.2ns | 2.375 V ~ 2.625 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC SDRAM 256MBIT 125MHZ 90VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 125MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 7ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-VFBGA (8x13)
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Package: 90-VFBGA |
Stock2,912 |
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DRAM | SDRAM - Mobile LPSDR | 256Mb (8M x 32) | Parallel | 125MHz | 15ns | 7ns | 1.7 V ~ 1.95 V | 0°C ~ 70°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (8x13) |
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Microchip Technology |
IC EEPROM 64KBIT 150NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 1ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock6,112 |
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EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 1ms | 150ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Microchip Technology |
IC EEPROM 256KBIT 200NS 28PIN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 200ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TC)
- Mounting Type: Through Hole
- Package / Case: 28-BCPGA
- Supplier Device Package: 28-CPGA (13.55x15.06)
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Package: 28-BCPGA |
Stock4,224 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 200ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TC) | Through Hole | 28-BCPGA | 28-CPGA (13.55x15.06) |
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Cypress Semiconductor Corp |
IC FLASH MEMORY 48TSOP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,696 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 133MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock5,568 |
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DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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Micron Technology Inc. |
IC FLASH 4GBIT 63VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 4Gb (4G x 1)
- Memory Interface: SPI
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (10.5x13)
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Package: 63-VFBGA |
Stock6,800 |
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FLASH | FLASH - NAND | 4Gb (4G x 1) | SPI | - | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (10.5x13) |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 15NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,712 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Winbond Electronics |
IC SDRAM 1GBIT 400MHZ 134VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
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Package: 134-VFBGA |
Stock5,248 |
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DRAM | SDRAM - Mobile LPDDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | - | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
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Cypress Semiconductor Corp |
IC FLASH 128MBIT 133MHZ 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock5,120 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Winbond Electronics |
IC SDRAM 512MBIT 400MHZ 84BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-WBGA (8x12.5)
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Package: 84-TFBGA |
Stock6,784 |
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DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |
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Microchip Technology |
IC EEPROM 4KBIT 10MHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
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Package: 8-WFDFN Exposed Pad |
Stock4,832 |
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EEPROM | EEPROM | 4Kb (512 x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
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Cypress Semiconductor Corp |
IC FLASH 256MBIT 100NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock7,696 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | Parallel | - | 100ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Cypress Semiconductor Corp |
IC FLASH 32M PARALLEL 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8, 2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 90ns
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (13x11)
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Package: 64-LBGA |
Stock2,096 |
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FLASH | FLASH - NOR | 32Mb (4M x 8, 2M x 16) | Parallel | - | 90ns | 90ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
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Cypress Semiconductor Corp |
IC MEMORY NOR
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,248 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC FLASH LPDRAM 6G 130MCP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,424 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC FLASH 1T MMC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Tb (128G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,328 |
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FLASH | FLASH - NAND | 1Tb (128G x 8) | MMC | - | - | - | - | -40°C ~ 105°C (TA) | - | - | - |
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Micron Technology Inc. |
IC DRAM 32G 1866MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 32Gb (512M x 64)
- Memory Interface: -
- Clock Frequency: 1866MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,032 |
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DRAM | SDRAM - Mobile LPDDR4 | 32Gb (512M x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 512K PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 512Kb (64K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock6,896 |
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SRAM | SRAM - Dual Port, Asynchronous | 512Kb (64K x 8) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Renesas Electronics Corporation |
IC FLASH 4MBIT SPI/QUAD 8UDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: 50µs, 800µs
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: 8-UDFN (5x6)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 4Mbit | SPI - Quad I/O | 108 MHz | 50µs, 800µs | - | 2.5V ~ 3.6V | -40°C ~ 85°C (TC) | Surface Mount | 8-UDFN Exposed Pad | 8-UDFN (5x6) |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT PARALLEL 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mbit
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous, QDR II | 18Mbit | Parallel | 200 MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Winbond Electronics |
IC DRAM 4GBIT LVSTL 11 200WFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 4Gbit
- Memory Interface: LVSTL_11
- Clock Frequency: 1.866 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4X | 4Gbit | LVSTL_11 | 1.866 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
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Renesas Electronics Corporation |
M3008316 8MB PARALLEL ASYNCHRONO
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP
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Package: - |
Request a Quote |
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RAM | MRAM (Magnetoresistive RAM) | 8Mbit | Parallel | - | 45ns | 45 ns | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP |
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Harris Corporation |
IC SRAM 4KBIT PARALLEL 18CERDIP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 290ns
- Access Time: 220 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-CERDIP
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 4Kbit | Parallel | - | 290ns | 220 ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | 18-CERDIP |
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ISSI, Integrated Silicon Solution Inc |
8G, 1.5V, DDR3, 512Mx16, 1866MT/
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (10x14)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - DDR3 | 8Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (10x14) |
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Micron Technology Inc. |
IC DRAM 16GBIT PAR 78FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 16Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.5 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-FBGA (7.5x11)
|
Package: - |
Stock1,470 |
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DRAM | SDRAM - DDR4 | 16Gbit | Parallel | 1.5 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |