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Microchip Technology |
IC EEPROM 8KBIT 3MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (512 x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock7,040 |
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EEPROM | EEPROM | 8Kb (512 x 16) | SPI | 3MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 400MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II+
- Memory Size: 36Mb (2M x 18)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock4,096 |
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SRAM | SRAM - Synchronous, DDR II+ | 36Mb (2M x 18) | Parallel | 400MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock7,648 |
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SRAM | SRAM - Synchronous ZBT | 4.5Mb (256K x 18) | Parallel | 200MHz | - | 3.2ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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STMicroelectronics |
IC OTP 256KBIT 90NS 28DIP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-PDIP
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Package: 28-DIP (0.600", 15.24mm) |
Stock7,020 |
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EPROM | EPROM - OTP | 256Kb (32K x 8) | Parallel | - | - | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 167MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock3,184 |
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SRAM | SRAM - Synchronous, DDR II | 18Mb (512K x 36) | Parallel | 167MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9MBIT 200MHZ 165BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TFBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TFBGA |
Stock7,712 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TFBGA | 165-TFBGA (13x15) |
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Microchip Technology |
IC EEPROM 64KBIT 400KHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock4,032 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 400kHz | 10ms | 900ns | 2.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 10NS 28SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (1M x 1)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 28-SOJ
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Package: 28-BSOJ (0.300", 7.62mm Width) |
Stock7,136 |
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SRAM | SRAM - Asynchronous | 1Mb (1M x 1) | Parallel | - | 10ns | 10ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
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Winbond Electronics |
IC SDRAM 1GBIT 800MHZ 78BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-WBGA (10.5x8)
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Package: 78-TFBGA |
Stock3,792 |
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DRAM | SDRAM - DDR3L | 1Gb (128M x 8) | Parallel | 800MHz | - | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-WBGA (10.5x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (16M x 8)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock6,960 |
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DRAM | SDRAM | 128Mb (16M x 8) | Parallel | 166MHz | - | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Microchip Technology |
IC EEPROM 64KBIT 400KHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock6,336 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Microchip Technology |
IC EEPROM 2KBIT 1MHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 400ns
- Voltage - Supply: 2.2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock13,836 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 1MHz | 5ms | 400ns | 2.2 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Rohm Semiconductor |
IC EEPROM 2KBIT 400KHZ SOP8-J
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.6 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP-J
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock26,256 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 5ms | - | 1.6 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP-J |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock6,720 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 133MHz | - | 6.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5M PARALLEL 128TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: 128-LQFP |
Stock3,552 |
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SRAM | SRAM - Dual Port, Asynchronous | 4.5Mb (256K x 18) | Parallel | - | 10ns | 10ns | 3.15 V ~ 3.45 V | -40°C ~ 85°C (TA) | Surface Mount | 128-LQFP | 128-TQFP (14x20) |
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Micron Technology Inc. |
MODULE EMMC 4GB 153VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 32Gb (4G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-TFBGA
- Supplier Device Package: 153-TFBGA (11.5x13)
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Package: 153-TFBGA |
Stock2,336 |
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FLASH | FLASH - NAND | 32Gb (4G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
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Cypress Semiconductor Corp |
IC SRAM ASYNC 1MBIT
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,536 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Winbond Electronics |
IC FLASH 64MBIT SPI/QUAD 24TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: 6 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (8x6)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 64Mbit | SPI - Quad I/O | 133 MHz | 3ms | 6 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (8x6) |
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Micron Technology Inc. |
LPDDR4 128GBIT 32 200/264 LFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 128Gbit
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 95°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4 | 128Gbit | Parallel | 2.133 GHz | - | - | - | -40°C ~ 95°C | - | - | - |
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Infineon Technologies |
IC PSRAM 64MBIT PARALLEL 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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PSRAM | PSRAM (Pseudo SRAM) | 64Mbit | HyperBus | 200 MHz | 35ns | 35 ns | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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Winbond Electronics |
IC FLASH 512MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 700µs
- Access Time: 7 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 512Mbit | SPI - Quad I/O | 166 MHz | 700µs | 7 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Micron Technology Inc. |
LPDDR4 8G 512MX16 FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 8Gbit
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.06V ~ 1.17V
- Operating Temperature: -40°C ~ 95°C
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR4 | 8Gbit | Parallel | 2.133 GHz | - | - | 1.06V ~ 1.17V | -40°C ~ 95°C | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
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Infineon Technologies |
IC FLASH 512MBIT HYPERBUS 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 1.7ms
- Access Time: 5.45 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 512Mbit | HyperBus | 200 MHz | 1.7ms | 5.45 ns | 1.7V ~ 2V | -40°C ~ 125°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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Renesas Electronics Corporation |
256K EEPROM (32KWORD X 8-BIT)
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
IC RAM DUAL PORT
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
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Package: - |
Request a Quote |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kbit | Parallel | - | 12ns | 12 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
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Renesas Electronics Corporation |
IC SRAM ASYNCH
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 28-SOJ
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Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 256Kbit | Parallel | - | 25ns | 25 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
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National Semiconductor |
SRAM, 4X4
- Memory Type: Volatile
- Memory Format: CAM
- Technology: CAM
- Memory Size: 16bit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 4.5 ns
- Voltage - Supply: -
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 24-CFlatPack
- Supplier Device Package: 24-CFlatPack
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Package: - |
Request a Quote |
|
CAM | CAM | 16bit | Parallel | - | - | 4.5 ns | - | 0°C ~ 85°C (TC) | Surface Mount | 24-CFlatPack | 24-CFlatPack |
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Cypress Semiconductor Corp |
IC SRAM 256KBIT PARALLEL 24SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 24-SOJ
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 256Kbit | Parallel | - | 20ns | 20 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 24-BSOJ (0.300", 7.62mm Width) | 24-SOJ |
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