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Cypress Semiconductor Corp |
IC FLASH 2GBIT 120NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Gb (256M x 8, 128M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 120ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (11x13)
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Package: 64-LBGA |
Stock5,440 |
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FLASH | FLASH - NOR | 2Gb (256M x 8, 128M x 16) | Parallel | - | - | 120ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (11x13) |
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Microchip Technology |
IC EEPROM 2KBIT 1MHZ 8UDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 550ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock5,376 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 1MHz | 5ms | 550ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
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Cypress Semiconductor Corp |
IC SRAM 512KBIT 20NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 512Kb (32K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,880 |
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SRAM | SRAM - Dual Port, Asynchronous | 512Kb (32K x 16) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC FLASH 256GBIT 169VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 256Gb (32G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 169-VFBGA
- Supplier Device Package: 169-VFBGA (14x18)
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Package: 169-VFBGA |
Stock3,008 |
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FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | - | - | - | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | Surface Mount | 169-VFBGA | 169-VFBGA (14x18) |
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Renesas Electronics America |
IC EEPROM 2KBIT 5MHZ 8SOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: SPI
- Clock Frequency: 5MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,280 |
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EEPROM | EEPROM | 2Kb (256 x 8) | SPI | 5MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 267MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 36Mb (4M x 9)
- Memory Interface: Parallel
- Clock Frequency: 267MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock4,784 |
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SRAM | SRAM - Synchronous, QDR II | 36Mb (4M x 9) | Parallel | 267MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Cypress Semiconductor Corp |
IC NVSRAM 64KBIT 35NS 28CDIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-CDIP (0.300", 7.62mm)
- Supplier Device Package: 28-CDIP
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Package: 28-CDIP (0.300", 7.62mm) |
Stock3,616 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 28-CDIP (0.300", 7.62mm) | 28-CDIP |
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Micron Technology Inc. |
IC SDRAM 1GBIT 167MHZ 90VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 1Gb (32M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.0ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-VFBGA (10x13)
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Package: 90-VFBGA |
Stock4,432 |
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DRAM | SDRAM - Mobile LPDDR | 1Gb (32M x 32) | Parallel | 166MHz | 15ns | 5.0ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (10x13) |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 15NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock3,424 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
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Cypress Semiconductor Corp |
IC NVSRAM 1MBIT 25NS 32SOIC
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 32-SOIC
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Package: 32-SOIC (0.295", 7.50mm Width) |
Stock6,400 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 25ns | 25ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.295", 7.50mm Width) | 32-SOIC |
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Micron Technology Inc. |
IC FLASH 32MBIT 70NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8, 2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock7,040 |
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FLASH | FLASH - NOR | 32Mb (4M x 8, 2M x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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STMicroelectronics |
IC EPROM UV 4MBIT 100NS 40CDIP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - UV
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 100ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 40-CDIP (0.600", 15.24mm) Window
- Supplier Device Package: 40-CDIP Frit Seal with Window
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Package: 40-CDIP (0.600", 15.24mm) Window |
Stock73,980 |
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EPROM | EPROM - UV | 4Mb (256K x 16) | Parallel | - | - | 100ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 40-CDIP (0.600", 15.24mm) Window | 40-CDIP Frit Seal with Window |
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Micron Technology Inc. |
IC SDRAM 512MBIT 133MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mb (128M x 4)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,168 |
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DRAM | SDRAM | 512Mb (128M x 4) | Parallel | 133MHz | 15ns | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Micron Technology Inc. |
IC FLASH 4MBIT 80NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mb (512K x 8, 256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 80ns
- Access Time: 80ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock3,856 |
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FLASH | FLASH - NOR | 4Mb (512K x 8, 256K x 16) | Parallel | - | 80ns | 80ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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STMicroelectronics |
IC EEPROM 1KBIT 2MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8, 64 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,705,728 |
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EEPROM | EEPROM | 1Kb (128 x 8, 64 x 16) | SPI | 2MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 15NS 32SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 32-SOJ
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Package: 32-BSOJ (0.300", 7.62mm Width) |
Stock12,552 |
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SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 32-BSOJ (0.300", 7.62mm Width) | 32-SOJ |
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Microchip Technology |
IC EEPROM 16KBIT 250NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 3ms
- Access Time: 250ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock2,640 |
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EEPROM | EEPROM | 16Kb (2K x 8) | Parallel | - | 3ms | 250ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 20NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,664 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Microchip Technology |
IC EEPROM 8KBIT 3MHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (1K x 8, 512 x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock14,658 |
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EEPROM | EEPROM | 8Kb (1K x 8, 512 x 16) | SPI | 3MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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ON Semiconductor |
IC EEPROM 4KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock6,560 |
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EEPROM | EEPROM | 4Kb (512 x 8) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Micron Technology Inc. |
IC DRAM 32G 1866MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 32Gb (512M x 64)
- Memory Interface: -
- Clock Frequency: 1866MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,848 |
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DRAM | SDRAM - Mobile LPDDR4 | 32Gb (512M x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC 128 MB FLASH MEMORY
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,424 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM ASYNC 28TSOP I
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,584 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Winbond Electronics |
IC FLASH 128MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
|
Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 128Mbit | SPI - Quad I/O, QPI, DTR | 133 MHz | 3ms | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Renesas Electronics Corporation |
STANDARD SRAM, 4MX18, 0.45NS
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
IC RAM 8MBIT SPI 54MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 8Mbit
- Memory Interface: SPI
- Clock Frequency: 54 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.71V ~ 2V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
RAM | MRAM (Magnetoresistive RAM) | 8Mbit | SPI | 54 MHz | - | - | 1.71V ~ 2V | -40°C ~ 85°C | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Intelligent Memory Ltd. |
IC DRAM 4GBIT PAR 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 2133 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (7.5x13.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - DDR3 | 4Gbit | Parallel | 2133 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (7.5x13.5) |
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Micron Technology Inc. |
LPDDR5 96GBIT 64 561/570 TFBGA 8
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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