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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 133MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock5,376 |
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DRAM | SDRAM - Mobile | 128Mb (8M x 16) | Parallel | 133MHz | - | 5.5ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 8NS 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
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Package: 165-TBGA |
Stock7,280 |
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SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | - | - | 8ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 143MHZ 90FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock5,760 |
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DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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Micron Technology Inc. |
IC SDRAM 256MBIT 133MHZ 54VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (8x9)
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Package: 54-VFBGA |
Stock6,272 |
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DRAM | SDRAM - Mobile LPSDR | 256Mb (16M x 16) | Parallel | 133MHz | 15ns | 5.4ns | 1.7 V ~ 1.95 V | 0°C ~ 70°C (TA) | Surface Mount | 54-VFBGA | 54-VFBGA (8x9) |
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STMicroelectronics |
IC EEPROM 2KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 900ns
- Voltage - Supply: 2.2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock81,036 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 10ms | 900ns | 2.2 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Rohm Semiconductor |
IC EEPROM 4KBIT 400KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock5,664 |
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EEPROM | EEPROM | 4Kb (512 x 8) | I2C | 400kHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Microchip Technology |
IC EEPROM 256KBIT 200NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 200ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock2,032 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 200ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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IDT, Integrated Device Technology Inc |
IC SRAM 1.125MBIT 5NS 208QFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 1.125Mb (32K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 5ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-BFQFP
- Supplier Device Package: 208-PQFP (28x28)
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Package: 208-BFQFP |
Stock4,304 |
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SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (32K x 36) | Parallel | - | - | 5ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 208-BFQFP | 208-PQFP (28x28) |
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IDT, Integrated Device Technology Inc |
IC SRAM 64KBIT 25NS 68PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: 68-LCC (J-Lead) |
Stock4,912 |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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Cypress Semiconductor Corp |
IC SRAM 16MBIT 45NS 48TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (2M x 8, 1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock7,584 |
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SRAM | SRAM - Asynchronous | 16Mb (2M x 8, 1M x 16) | Parallel | - | 45ns | 45ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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IDT, Integrated Device Technology Inc |
IC SRAM 18KBIT 25NS 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 18Kb (2K x 9)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock6,480 |
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SRAM | SRAM - Dual Port, Asynchronous | 18Kb (2K x 9) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock3,856 |
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SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 183MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 183MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.3ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP
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Package: 100-LQFP |
Stock5,232 |
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SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | 183MHz | - | 3.3ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP |
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Alliance Memory, Inc. |
IC SRAM 4MBIT 20NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock7,616 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Alliance Memory, Inc. |
IC SRAM 4MBIT 12NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock18,888 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Alliance Memory, Inc. |
IC SRAM 2MBIT 20NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock2,816 |
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SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Adesto Technologies |
IC FLASH 8MBIT 85MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 8Mb (264 Bytes x 4096 pages)
- Memory Interface: SPI
- Clock Frequency: 85MHz
- Write Cycle Time - Word, Page: 8µs, 4ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock649,632 |
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FLASH | FLASH | 8Mb (264 Bytes x 4096 pages) | SPI | 85MHz | 8µs, 4ms | - | 1.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC FLASH 512M PARALLEL 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-Fortified BGA (13x11)
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Package: 64-LBGA |
Stock5,360 |
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FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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Cypress Semiconductor Corp |
IC FLASH 256M SPI 80MHZ 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 80MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock7,264 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 80MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Cypress Semiconductor Corp |
IC NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (6x8)
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Package: 24-TBGA |
Stock4,896 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 66MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-BGA (6x8) |
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Cypress Semiconductor Corp |
IC FLASH 64M PARALLEL WAFER
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8, 4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 110ns
- Access Time: 110ns
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Wafer
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Package: Die |
Stock7,488 |
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FLASH | FLASH - NOR | 64Mb (8M x 8, 4M x 16) | Parallel | - | 110ns | 110ns | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | Die | Wafer |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Insignis Technology Corporation |
DDR3L 4GB X8 FBGA 7.5X10.6(X1.2)
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-FBGA (7.5x10.6)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3L | 4Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x10.6) |
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Infineon Technologies |
IC FLASH 128MBIT PARALLEL 64FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 110 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (9x9)
|
Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 128Mbit | Parallel | - | 60ns | 110 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Advanced Micro Devices |
IC PROM 8KBIT PARALLEL 32CLCC
- Memory Type: Non-Volatile
- Memory Format: PROM
- Technology: PROM
- Memory Size: 8Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 45 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -55°C ~ 125°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-CLCC
- Supplier Device Package: 32-CLCC
|
Package: - |
Request a Quote |
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PROM | PROM | 8Kbit | Parallel | - | - | 45 ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 32-CLCC | 32-CLCC |
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Micron Technology Inc. |
SPECIAL/CUSTOM LPDDR4 PLASTIC MI
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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GigaDevice Semiconductor (HK) Limited |
IC FLASH 16MBIT SPI/QUAD 8USON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 60µs, 2.4ms
- Access Time: 6 ns
- Voltage - Supply: 1.65V ~ 2.1V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-XFDFN Exposed Pad
- Supplier Device Package: 8-USON (3x2)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 16Mbit | SPI - Quad I/O, QPI | 133 MHz | 60µs, 2.4ms | 6 ns | 1.65V ~ 2.1V | -40°C ~ 85°C (TA) | Surface Mount | 8-XFDFN Exposed Pad | 8-USON (3x2) |
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Texas Instruments |
262 264-WORD BY 4 BIT FIELD MEMO
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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