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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 166MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock7,104 |
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DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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Micron Technology Inc. |
IC SDRAM 512MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (128M x 4)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock3,392 |
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DRAM | SDRAM - DDR | 512Mb (128M x 4) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Micron Technology Inc. |
IC SDRAM 256MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock5,856 |
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DRAM | SDRAM - DDR | 256Mb (32M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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ON Semiconductor |
IC EEPROM 256KBIT 150NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 5ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC (11.43x13.97)
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Package: 32-LCC (J-Lead) |
Stock4,512 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 5ms | 150ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (11.43x13.97) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 8NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,600 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 100MHz | - | 8ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 35NS 84PGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (8K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 84-BPGA
- Supplier Device Package: 84-PGA (27.94x27.94)
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Package: 84-BPGA |
Stock7,904 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |
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IDT, Integrated Device Technology Inc |
IC SRAM 64KBIT 15NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kb (4K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,624 |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 667MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock5,536 |
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DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,008 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Fujitsu Electronics America, Inc. |
IC FRAM 16KBIT 400KHZ 8SOP
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: -
- Access Time: 550ns
- Voltage - Supply: 3 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,680 |
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FRAM | FRAM (Ferroelectric RAM) | 16Kb (2K x 8) | I2C | 1MHz | - | 550ns | 3 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC EEPROM 64KBIT I2C 6WLCSP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,712 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 128KBIT 20NS 68PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (16K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.23x24.23)
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Package: 68-LCC (J-Lead) |
Stock6,112 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (16K x 8) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.23x24.23) |
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Maxim Integrated |
IC NVSRAM 256KBIT 120NS 28EDIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 120ns
- Access Time: 120ns
- Voltage - Supply: 4.75 V ~ 5.25 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 28-EDIP
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Package: 28-DIP Module (0.600", 15.24mm) |
Stock6,368 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 120ns | 120ns | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
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STMicroelectronics |
IC EEPROM 16KBIT 5MHZ 8UFDFPN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UFDFPN (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock205,116 |
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EEPROM | EEPROM | 16Kb (2K x 8) | SPI | 10MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UFDFPN (2x3) |
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Macronix |
IC FLASH 32MBIT 80MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8)
- Memory Interface: SPI
- Clock Frequency: 80MHz
- Write Cycle Time - Word, Page: 100µs, 4ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock21,486 |
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FLASH | FLASH - NOR | 32Mb (4M x 8) | SPI | 80MHz | 100µs, 4ms | - | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Micron Technology Inc. |
ALL IN ONE MCP 560G
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,888 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 90TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM | 128Mbit | LVTTL | 143 MHz | - | 5.4 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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Insignis Technology Corporation |
SDR 256MB X16 BGA 8X8(X1.2) PC16
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-FBGA (8x8)
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Package: - |
Request a Quote |
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DRAM | SDRAM | 256Mbit | LVTTL | 166 MHz | 12ns | 5 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-FBGA (8x8) |
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Macronix |
MEMORY
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: 100µs, 3.6ms
- Access Time: 6 ns
- Voltage - Supply: 2.3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-USON (2x3)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 8Mbit | SPI - Quad I/O | 108 MHz | 100µs, 3.6ms | 6 ns | 2.3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-USON (2x3) |
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Harris Corporation |
256-WORD X 8 STATIC EPROM
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Silicon Motion, Inc. |
IC FLASH 2TBIT UFS3.1 153BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 2Tbit
- Memory Interface: UFS3.1
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 153-TBGA
- Supplier Device Package: 153-BGA (11.5x13)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (TLC) | 2Tbit | UFS3.1 | - | - | - | - | -40°C ~ 105°C | Surface Mount | 153-TBGA | 153-BGA (11.5x13) |
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Rohm Semiconductor |
512KBIT, SPI BUS, SERIAL EEPROM
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 512Kbit
- Memory Interface: SPI
- Clock Frequency: 20 MHz
- Write Cycle Time - Word, Page: 3.5ms
- Access Time: -
- Voltage - Supply: 1.6V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP-B
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Package: - |
Request a Quote |
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EEPROM | EEPROM | 512Kbit | SPI | 20 MHz | 3.5ms | - | 1.6V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP-B |
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Winbond Electronics |
IC FLASH 8MBIT SPI/QUAD 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 50µs, 3ms
- Access Time: 6 ns
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 8Mbit | SPI - Quad I/O | 104 MHz | 50µs, 3ms | 6 ns | 2.5V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 8KBIT I2C TSOT23-5
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kbit
- Memory Interface: I2C
- Clock Frequency: 1 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 450 ns
- Voltage - Supply: 1.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: TSOT-23-5
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Package: - |
Stock25,617 |
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EEPROM | EEPROM | 8Kbit | I2C | 1 MHz | 5ms | 450 ns | 1.7V ~ 3.6V | -40°C ~ 85°C (TC) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSOT-23-5 |
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Etron Technology, Inc. |
IC DRAM 4GBIT PAR 78FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-FBGA (7.5x10.6)
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Package: - |
Stock2,367 |
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DRAM | SDRAM - DDR3L | 4Gbit | Parallel | 933 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x10.6) |
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Fairchild Semiconductor |
IC EEPROM 2KBIT I2C 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kbit
- Memory Interface: I2C
- Clock Frequency: 400 kHz
- Write Cycle Time - Word, Page: 15ms
- Access Time: 900 ns
- Voltage - Supply: 2.7V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: - |
Request a Quote |
|
EEPROM | EEPROM | 2Kbit | I2C | 400 kHz | 15ms | 900 ns | 2.7V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR2 | 4Gbit | HSUL_12 | 400 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |