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Micron Technology Inc. |
IC SDRAM 8GBIT 400MHZ 168FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 8Gb (256M x 32)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.3 V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-FBGA (12x12)
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Package: 168-VFBGA |
Stock2,848 |
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DRAM | SDRAM - Mobile LPDDR2 | 8Gb (256M x 32) | Parallel | 400MHz | - | - | 1.14 V ~ 1.3 V | -25°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-FBGA (12x12) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,280 |
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SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC FLASH 256MBIT 95NS 64EASYBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8, 16M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 95ns
- Access Time: 95ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-TBGA
- Supplier Device Package: 64-EasyBGA (10x13)
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Package: 64-TBGA |
Stock2,000 |
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FLASH | FLASH - NOR | 256Mb (32M x 8, 16M x 16) | Parallel | - | 95ns | 95ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-TBGA | 64-EasyBGA (10x13) |
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Micron Technology Inc. |
IC FLASH 64MBIT 85NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 40MHz
- Write Cycle Time - Word, Page: 85ns
- Access Time: 85ns
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP (14x20)
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock7,984 |
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FLASH | FLASH - NOR | 64Mb (4M x 16) | Parallel | 40MHz | 85ns | 85ns | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP (14x20) |
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Microchip Technology |
IC EEPROM 2KBIT 20MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,976 |
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EEPROM | EEPROM | 2Kb (256 x 8) | SPI | 20MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC FLASH 1MBIT 90NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 50µs
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
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Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock6,688 |
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FLASH | FLASH | 1Mb (128K x 8) | Parallel | - | 50µs | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
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Microchip Technology |
IC EEPROM 1KBIT 400KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,304 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 400kHz | 5ms | 900ns | 1.8 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Fairchild/ON Semiconductor |
IC OTP 512KBIT 90NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 512Kb (64K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock6,752 |
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EPROM | EPROM - OTP | 512Kb (64K x 8) | Parallel | - | - | 90ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 2GBIT 667MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (128M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock2,800 |
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DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 1GBIT 667MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 667MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: 96-TFBGA |
Stock6,768 |
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DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425 V ~ 1.575 V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 60ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,064 |
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FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | - | 60ns | 60ns | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | - | - | - |
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Alliance Memory, Inc. |
IC SDRAM 256MBIT 166MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: 54-TFBGA |
Stock4,528 |
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DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 166MHz | 12ns | 5ns | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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Micron Technology Inc. |
IC FLASH 128MBIT 108MHZ 16SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (32M x 4)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOP2
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock3,968 |
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FLASH | FLASH - NOR | 128Mb (32M x 4) | SPI | 108MHz | 8ms, 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP2 |
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Winbond Electronics |
IC SDRAM 128MBIT 166MHZ 60TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-VFBGA (8x9)
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Package: 60-TFBGA |
Stock2,400 |
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DRAM | SDRAM - Mobile LPDDR | 128Mb (8M x 16) | Parallel | 166MHz | 15ns | 5ns | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | Surface Mount | 60-TFBGA | 60-VFBGA (8x9) |
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Cypress Semiconductor Corp |
IC SRAM 2MBIT 45NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock8,136 |
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SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Rohm Semiconductor |
IC EEPROM 16KBIT 3MHZ 8VSON
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (1K x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: VSON008X2030
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Package: 8-UFDFN Exposed Pad |
Stock28,194 |
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EEPROM | EEPROM | 16Kb (1K x 16) | SPI | 3MHz | 5ms | - | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | VSON008X2030 |
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Cypress Semiconductor Corp |
IC FRAM 256KBIT 40MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: SPI
- Clock Frequency: 40MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock24,942 |
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FRAM | FRAM (Ferroelectric RAM) | 256Kb (32K x 8) | SPI | 40MHz | - | - | 2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Micron Technology Inc. |
IC SDRAM LPDDR4 4G ?? NA QDP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,144 |
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DRAM | SDRAM - Mobile LPDDR4 | - | - | - | - | - | - | - | - | - | - |
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Cypress Semiconductor Corp |
IC FLASH 256M SPI 66MHZ 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock3,920 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 66MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Cypress Semiconductor Corp |
IC 64 MB FLASH MEMORY
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,456 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Cypress Semiconductor Corp |
IC NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (6x8)
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Package: 24-TBGA |
Stock5,712 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 66MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-BGA (6x8) |
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Micron Technology Inc. |
IC FLASH 1T PARALLEL 333MHZ
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Tb (128G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,472 |
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FLASH | FLASH - NAND | 1Tb (128G x 8) | Parallel | 333MHz | - | - | 2.5 V ~ 3.6 V | 0°C ~ 70°C (TA) | - | - | - |
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Micron Technology Inc. |
IC DRAM LPDDR4 SMD
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,768 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Winbond Electronics |
SPIFLASH, 512M-BIT, 4KB UNIFORM
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 3.5ms
- Access Time: 6.5 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 512Mbit | SPI - Quad I/O, QPI | 133 MHz | 3.5ms | 6.5 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IC FLASH 1GBIT HYPERBUS 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: HyperBus
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 1.7ms
- Access Time: 6.5 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (8x8)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 1Gbit | HyperBus | 166 MHz | 1.7ms | 6.5 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (8x8) |
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onsemi |
IC NVSRAM 256BIT 300NS 16SOIC
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256bit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 300ns
- Access Time: 300 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
Request a Quote |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 256bit | Parallel | - | 300ns | 300 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Micron Technology Inc. |
DDR4 16G 2GX8 FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 16Gbit
- Memory Interface: Parallel
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - DDR4 | 16Gbit | Parallel | 1.6 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | - | - | - |