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Infineon Technologies |
HI/LO SIDE DRVR 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.7V, 2.2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 200V
- Rise / Fall Time (Typ): 35ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock52,692 |
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Independent | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.2V | 1A, 1A | Inverting | 200V | 35ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 130ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock31,740 |
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Independent | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Infineon Technologies |
IC DRIVER 3PHASE 600V 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock6,752 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Infineon Technologies |
IC DRIVER RECT SYNC 5V 4A 20SSOP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 5.25 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 20-SSOP
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Package: 20-SSOP (0.209", 5.30mm Width) |
Stock6,944 |
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Single | 1 | N-Channel MOSFET | 4 V ~ 5.25 V | - | 4A, 4A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 20-SSOP (0.209", 5.30mm Width) | 20-SSOP |
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Texas Instruments |
IC COMP SWITCH FET DRIVER 16SOIC
- Driven Configuration: Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 7 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 500mA, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 30ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock4,320 |
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Synchronous | 2 | N-Channel, P-Channel MOSFET | 7 V ~ 20 V | 0.8V, 2V | 500mA, 1A | Non-Inverting | - | 30ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Texas Instruments |
IC DRIVER HALF-BRIDGE HV 10WSON
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9 V ~ 14 V
- Logic Voltage - VIL, VIH: 2.3V, -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 118V
- Rise / Fall Time (Typ): 570ns, 430ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WDFN Exposed Pad
- Supplier Device Package: 10-WSON (4x4)
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Package: 10-WDFN Exposed Pad |
Stock65,016 |
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Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 2A, 2A | Non-Inverting | 118V | 570ns, 430ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9 V ~ 14 V
- Logic Voltage - VIL, VIH: 2.3V, -
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 118V
- Rise / Fall Time (Typ): 990ns, 715ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,992 |
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Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 1A, 1A | Non-Inverting | 118V | 990ns, 715ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Intersil |
IC MOSFET DRVR SYNC BUCK 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,128 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRIVER MOSFET DUAL SYNC 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.3 V ~ 6.8 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 3A, 3.2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 28V
- Rise / Fall Time (Typ): 17ns, 12ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,100 |
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Synchronous | 2 | N-Channel MOSFET | 4.3 V ~ 6.8 V | - | 3A, 3.2A | Non-Inverting | 28V | 17ns, 12ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Intersil |
IC DRIVER DUAL SYNC BUCK 16-QFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VQFN Exposed Pad
- Supplier Device Package: 16-QFN (4x4)
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Package: 16-VQFN Exposed Pad |
Stock24,948 |
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Synchronous | 4 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8MSOP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock13,764 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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IXYS Integrated Circuits Division |
2A 8 DFN DUAL INVERTING
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (5x4)
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Package: 8-VDFN Exposed Pad |
Stock4,336 |
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Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 200V 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 200V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,372 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 44PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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Package: 44-LCC (J-Lead), 32 Leads |
Stock6,624 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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STMicroelectronics |
IC GATE DVR 1A LOW SIDE SOT23-6
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 10 V ~ 18 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 800mA, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: SOT-23-6 |
Stock4,544 |
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Single | 1 | N-Channel, P-Channel MOSFET | 10 V ~ 18 V | - | 800mA, 1A | Non-Inverting | - | 20ns, 20ns (Max) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Microchip Technology |
IC DRIVER MIN PARTS HI/LO 8SOIC
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.75 V ~ 32 V
- Logic Voltage - VIL, VIH: 2V, 4.5V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock180,828 |
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Single | 1 | N-Channel MOSFET | 4.75 V ~ 32 V | 2V, 4.5V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 1V, 2.3V
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7ns, 6ns
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock208,992 |
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Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 12.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 30A, 30A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 11ns, 11ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-5
- Supplier Device Package: TO-220-5
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Package: TO-220-5 |
Stock23,808 |
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Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Texas Instruments |
UCC27710DR
- Driven Configuration: High-Side or Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 1.2V, 2V
- Current - Peak Output (Source, Sink): 500mA, 1A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 35ns, 16ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock60,000 |
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Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 20 V | 1.2V, 2V | 500mA, 1A | - | 600V | 35ns, 16ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America |
IC MOSFET DRVR 100V 1.25A 9-DFN
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9 V ~ 14 V
- Logic Voltage - VIL, VIH: 1.4V, 2.2V
- Current - Peak Output (Source, Sink): 1.25A, 1.25A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 100V
- Rise / Fall Time (Typ): 16ns, 16ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFDFN Exposed Pad
- Supplier Device Package: 9-DFN-EP (3x3)
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Package: 9-VFDFN Exposed Pad |
Stock25,938 |
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Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 1.4V, 2.2V | 1.25A, 1.25A | Non-Inverting | 100V | 16ns, 16ns | -40°C ~ 125°C (TJ) | Surface Mount | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 28 V
- Logic Voltage - VIL, VIH: 2V, 4.25V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 32ns
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
|
Package: 10-WFDFN Exposed Pad |
Stock3,840 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 28 V | 2V, 4.25V | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 125°C | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Renesas Electronics America |
IC HALF BRIDGE FET DRIVER 10TDFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 14 V
- Logic Voltage - VIL, VIH: 1.4V, 2.2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 114V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WDFN Exposed Pad
- Supplier Device Package: 10-TDFN (4x4)
|
Package: 10-WDFN Exposed Pad |
Stock4,704 |
|
Synchronous | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock2,384 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Diodes Incorporated |
IC GATE HV DRVR SO-8
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 200V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO Type TH
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock23,640 |
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Synchronous | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO Type TH |
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Power Integrations |
IGBT DRIVER P/P 1CH COATING
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 15.5V ~ 16.8V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 6A, 10A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 1200 V
- Rise / Fall Time (Typ): 100ns, 100ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
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Single | 1 | IGBT | 15.5V ~ 16.8V | - | 6A, 10A | - | 1200 V | 100ns, 100ns | -40°C ~ 85°C | Chassis Mount | Module | Module |
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Microchip Technology |
QUAD 1.2A-PEAK LOW-SIDE MOSFET D
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 18V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.2A, 1.2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 13ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
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Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 14ns, 13ns | 0°C ~ 70°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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onsemi |
IC MOSFET DRIVER DUAL 12V 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.6V ~ 13.2V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 35 V
- Rise / Fall Time (Typ): 20ns, 11ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
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Synchronous | 2 | N-Channel MOSFET | 4.6V ~ 13.2V | 0.8V, 2V | - | Inverting, Non-Inverting | 35 V | 20ns, 11ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET IGBT SIC DRIVER 9A
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, SiC MOSFET
- Voltage - Supply: -10V ~ 25V
- Logic Voltage - VIL, VIH: 1V, 2.2V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: CMOS, TTL
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 16-SOIC-EP
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Package: - |
Stock22,986 |
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Single | 1 | IGBT, SiC MOSFET | -10V ~ 25V | 1V, 2.2V | 9A, 9A | CMOS, TTL | - | 10ns, 10ns | -40°C ~ 125°C (TA) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) Exposed Pad | 16-SOIC-EP |