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Texas Instruments |
IC DVR GATE HALF BRIDGE 10WSON
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 1.8A, 1.8A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 118V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WDFN Exposed Pad
- Supplier Device Package: 10-WSON (4x4)
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Package: 10-WDFN Exposed Pad |
Stock5,344 |
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Synchronous | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1.8A, 1.8A | Non-Inverting | 118V | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Intersil |
IC MOSFET DRIVER 2CH 6A 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 16 V
- Logic Voltage - VIL, VIH: 1.22V, 2.08V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock5,568 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 16 V | 1.22V, 2.08V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Intersil |
IC MOSFET DRVR SYNC BUCK 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,720 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.5 V ~ 28 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock3,472 |
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Independent | 2 | N-Channel MOSFET | 6.5 V ~ 28 V | - | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 28 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 42ns, 30ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock3,696 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 28 V | 0.8V, 2V | 2A, 4A | Inverting, Non-Inverting | - | 42ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 14DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.2A, 1.2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 13ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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Package: 14-DIP (0.300", 7.62mm) |
Stock15,060 |
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Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-CDIP
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 33ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-CDIP (0.300", 7.62mm)
- Supplier Device Package: 8-CDIP
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Package: 8-CDIP (0.300", 7.62mm) |
Stock5,024 |
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Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CDIP |
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Infineon Technologies |
IC HALF BRIDGE DRIVER 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.3V
- Current - Peak Output (Source, Sink): 60mA, 130mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 200ns, 100ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,088 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 60mA, 130mA | Non-Inverting | 600V | 200ns, 100ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8MSOP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 1V, 2.3V
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7ns, 6ns
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 8-MSOP-PowerPad
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Stock7,056 |
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Independent | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.3V | 5A, 5A | Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Texas Instruments |
IC GATE DVR HI/LO SIDE 1A 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9 V ~ 14 V
- Logic Voltage - VIL, VIH: 2.3V, -
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 100V
- Rise / Fall Time (Typ): 990ns, 715ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,144 |
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Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 1A, 1A | Non-Inverting | 100V | 990ns, 715ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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STMicroelectronics |
IC GATE DRIVER HALF BRDGE 14SO
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 1.1V, 1.9V
- Current - Peak Output (Source, Sink): 290mA, 430mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 75ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SO
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock144,084 |
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Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
IC MOSFET DVR N-CH DUAL 8-VFDFPN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 5 V ~ 12 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3.5A, -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 41V
- Rise / Fall Time (Typ): -
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-VFDFPN (3x3)
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Package: 8-VFDFN Exposed Pad |
Stock5,472 |
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Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 0.8V, 2V | 3.5A, - | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-VFDFPN (3x3) |
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Texas Instruments |
IC PERIPHERAL DRVR DUAL HS 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.75 V ~ 5.25 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 500mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 5ns, 7ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock5,520 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8MINIDIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 17V (Max)
- Logic Voltage - VIL, VIH: 1.5V, 3.6V
- Current - Peak Output (Source, Sink): 400mA, 650mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 50ns, 30ns
- Operating Temperature: -45°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-Mini DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock5,120 |
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Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -45°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-Mini DIP |
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Maxim Integrated |
IC DRIVER HALF BRDG HS 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock24,012 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC SMART SECONDARY DRIVER 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 12 V ~ 18 V
- Logic Voltage - VIL, VIH: 2V, 2.15V
- Current - Peak Output (Source, Sink): 2A, 7A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 18ns, 10ns
- Operating Temperature: -25°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock15,636 |
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Single | 1 | N-Channel MOSFET | 12 V ~ 18 V | 2V, 2.15V | 2A, 7A | Non-Inverting | - | 18ns, 10ns | -25°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Intersil |
IC DRIVER FULL-BRIDGE 20-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9.5 V ~ 15 V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): 2.6A, 2.4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 95V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 20-DIP (0.300", 7.62mm)
- Supplier Device Package: 20-PDIP
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Package: 20-DIP (0.300", 7.62mm) |
Stock6,768 |
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Synchronous | 4 | N-Channel MOSFET | 9.5 V ~ 15 V | 1V, 2.5V | 2.6A, 2.4A | Non-Inverting | 95V | 10ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 20-DIP (0.300", 7.62mm) | 20-PDIP |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 8-MSOP-EP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Stock6,864 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 25ns, 15ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,664 |
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Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America |
IC MOSFET DVR SYNC BUCK 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,552 |
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Synchronous | 2 | N-Channel MOSFET | 6.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC DRIVER GATE HI/LO SIDE 14-SOP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 22 V
- Logic Voltage - VIL, VIH: 1.2V, 2.5V
- Current - Peak Output (Source, Sink): 4.5A, 4.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 25ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOP
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock7,232 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 22 V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8DFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 5.5 V
- Logic Voltage - VIL, VIH: 0.5V, 2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 33V
- Rise / Fall Time (Typ): 8ns, 8ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (2x2)
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Package: 8-VFDFN Exposed Pad |
Stock4,336 |
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Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.5V, 2V | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN-EP (2x2) |
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Renesas Electronics America |
IC HALF BRIDGE FET DRIVER 9TDFN
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 14 V
- Logic Voltage - VIL, VIH: 1.4V, 2.2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 114V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-WDFN Exposed Pad
- Supplier Device Package: 9-TDFN (4x4)
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Package: 9-WDFN Exposed Pad |
Stock2,544 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock5,040 |
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Synchronous | 2 | N-Channel MOSFET | 7 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Infineon Technologies |
IC 200V HB GATE DRIVER 14VQFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 200 V
- Rise / Fall Time (Typ): 70ns, 30ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 14-VFQFN Exposed Pad
- Supplier Device Package: 14-MLPQ (4x4)
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Package: - |
Request a Quote |
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Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200 V | 70ns, 30ns | -40°C ~ 125°C (TA) | Surface Mount | 14-VFQFN Exposed Pad | 14-MLPQ (4x4) |
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Power Integrations |
IGBT DRIVER P/P 1CH
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 15.5V ~ 16.8V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 6A, 10A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 1200 V
- Rise / Fall Time (Typ): 100ns, 100ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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Single | 1 | IGBT | 15.5V ~ 16.8V | - | 6A, 10A | - | 1200 V | 100ns, 100ns | -40°C ~ 85°C | Chassis Mount | Module | Module |
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Analog Devices Inc. |
FAST 150V PROTECTED HI SIDE NMOS
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 3.5V ~ 135V
- Logic Voltage - VIL, VIH: 1.8V, 1.7V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 14 V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-TFSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 16-MSOP-EP
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Package: - |
Stock306 |
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Single | 1 | N-Channel MOSFET | 3.5V ~ 135V | 1.8V, 1.7V | - | Non-Inverting | 14 V | 90ns, 40ns | -40°C ~ 125°C (TJ) | Surface Mount | 16-TFSOP (0.118", 3.00mm Width) Exposed Pad | 16-MSOP-EP |
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Infineon Technologies |
INT. POWERSTAGE/DRIVER
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8V ~ 17V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 3A, 6A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 120 V
- Rise / Fall Time (Typ): 4.6ns, 3.3ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VDFN Exposed Pad
- Supplier Device Package: PG-VDSON-10-2
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Package: - |
Stock15,000 |
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Independent | 2 | N-Channel MOSFET | 8V ~ 17V | - | 3A, 6A | Non-Inverting | 120 V | 4.6ns, 3.3ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VDFN Exposed Pad | PG-VDSON-10-2 |