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Infineon Technologies |
IC DRIVER
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,728 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock30,000 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting | 600V | 15ns, 15ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HIGH SIDE 600V 8SOIC
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 500mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 80ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,472 |
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Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 500mA, 500mA | Non-Inverting | 600V | 80ns, 80ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR 3-PHASE BRIDGE 28SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock4,400 |
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3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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IXYS |
RF MOSFET DRIVER 20 AMP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 8 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 20A, 20A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 3ns, 3ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 7-SMD, Flat Lead
- Supplier Device Package: DE275
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Package: 7-SMD, Flat Lead |
Stock7,632 |
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Single | 1 | N-Channel, P-Channel MOSFET | 8 V ~ 30 V | 0.8V, 3.5V | 20A, 20A | Inverting | - | 3ns, 3ns | -40°C ~ 150°C (TJ) | Surface Mount | 7-SMD, Flat Lead | DE275 |
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ON Semiconductor |
IC PREDRIVER QUAD LOSIDE 32-LQFP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.75 V ~ 5.25 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 1.4µs, 1.4µs (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 32-LQFP
- Supplier Device Package: 32-LQFP (7x7)
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Package: 32-LQFP |
Stock31,680 |
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Independent | 4 | N-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | - | Non-Inverting | - | 1.4µs, 1.4µs (Max) | -40°C ~ 150°C (TJ) | Surface Mount | 32-LQFP | 32-LQFP (7x7) |
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Intersil |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock6,848 |
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Synchronous | 2 | N-Channel MOSFET | 7 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Intersil |
IC MOSFET DRVR SYNC BUCK 10-DFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
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Package: 10-VFDFN Exposed Pad |
Stock5,968 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Intersil |
IC DRIVER HALF BRIDGE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9 V ~ 14 V
- Logic Voltage - VIL, VIH: 4V, 7V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 114V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock17,400 |
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Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 4V, 7V | 2A, 2A | Non-Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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ON Semiconductor |
IC DRIVER GATE SINGLE IGBT 8DIP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 11 V ~ 20 V
- Logic Voltage - VIL, VIH: 1.2V, 3.2V
- Current - Peak Output (Source, Sink): 1A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 17ns, 17ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock102,828 |
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Single | 1 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 3.2V | 1A, 2A | Inverting | - | 17ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC DRIVER MOSF HI/LOW SIDE 8SOIC
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.75 V ~ 32 V
- Logic Voltage - VIL, VIH: 2V, 4.5V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,408 |
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Single | 1 | N-Channel MOSFET | 4.75 V ~ 32 V | 2V, 4.5V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 9A HS N-INV 8-SOIJ
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 60ns, 60ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIJ
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock482,700 |
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Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 60ns, 60ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ |
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Texas Instruments |
IC SYNC BUCK FET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 15 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2.7A, 2.4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 28V
- Rise / Fall Time (Typ): 50ns, 50ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,336 |
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Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | - | 2.7A, 2.4A | Non-Inverting | 28V | 50ns, 50ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER HI SPEED 16QFN
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 5 V ~ 12 V
- Logic Voltage - VIL, VIH: 0.3V, 1.7V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 6ns, 6ns
- Operating Temperature: -20°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VQFN Exposed Pad
- Supplier Device Package: 16-QFN (4x4)
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Package: 16-VQFN Exposed Pad |
Stock5,808 |
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Independent | 4 | N-Channel, P-Channel MOSFET | 5 V ~ 12 V | 0.3V, 1.7V | 2A, 2A | Non-Inverting | - | 6ns, 6ns | -20°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 19ns, 19ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN-S (6x5)
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Package: 8-VDFN Exposed Pad |
Stock4,048 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
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Power Integrations |
IC DUAL GATE DRIVER 20A
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT
- Voltage - Supply: 14.5 V ~ 15.5 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 20A, 20A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 1700V
- Rise / Fall Time (Typ): 7ns, 25ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,048 |
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Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 20A, 20A | - | 1700V | 7ns, 25ns | -40°C ~ 85°C (TA) | - | - | - |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 16 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 1.2A, 1.2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 35ns, 25ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock18,660 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Non-Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology |
IC GATE DRVR N-CH MOSFET 10MSOP
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 3.5 V ~ 15 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 10-MSOP
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Package: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad |
Stock9,156 |
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Single | 1 | N-Channel MOSFET | 3.5 V ~ 15 V | - | - | Non-Inverting | - | 90ns, 40ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad | 10-MSOP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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Package: 14-DIP (0.300", 7.62mm) |
Stock6,120 |
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Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Renesas Electronics America |
IC DRVR SYNC BUCK HF 10-DFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
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Package: 10-VFDFN Exposed Pad |
Stock6,456 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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ON Semiconductor |
IC MOSFET HALF BRIDGE DVR 16SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 13.5 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 30ns, 25ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock7,808 |
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Synchronous | 4 | N-Channel MOSFET | 10 V ~ 13.5 V | 0.8V, 2V | - | Non-Inverting | - | 30ns, 25ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Renesas Electronics America |
IC MOSFET DRVR DUAL SYNC 16-QFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 5.5 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 8ns, 8ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VQFN Exposed Pad
- Supplier Device Package: 16-QFN (4x4)
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Package: 16-VQFN Exposed Pad |
Stock3,600 |
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Synchronous | 4 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | -, 4A | Non-Inverting | 36V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 10-DFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
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Package: 10-VFDFN Exposed Pad |
Stock4,704 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8 V ~ 13.2 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock2,608 |
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Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Renesas Electronics America |
IC DRVR H-BRDG 100V 1.25A 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9 V ~ 14 V
- Logic Voltage - VIL, VIH: 3.7V, 7.4V
- Current - Peak Output (Source, Sink): 1.25A, 1.25A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 100V
- Rise / Fall Time (Typ): 16ns, 16ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,880 |
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Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 3.7V, 7.4V | 1.25A, 1.25A | Non-Inverting | 100V | 16ns, 16ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
3.0A SINGLE NON-INV MOSFET DRIVE
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 4.5V ~ 18V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 13ns, 12ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,320 |
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Single | 1 | IGBT | 4.5V ~ 18V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 13ns, 12ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
12.0A SINGLE INVERTING MOSFET DR
- Driven Configuration: Low-Side
- Channel Type: Synchronous
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 18V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 12A, 12A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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Synchronous | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 12A, 12A | Inverting | - | 25ns, 25ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics Corporation |
100V/4A PWM INPUT HALF-BRIDGE DR
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6V ~ 18V
- Logic Voltage - VIL, VIH: 1.47V, 1.84V
- Current - Peak Output (Source, Sink): 3A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 115 V
- Rise / Fall Time (Typ): 435ns, 365ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WDFN Exposed Pad
- Supplier Device Package: 10-TDFN (4x4)
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Package: - |
Stock116,313 |
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Synchronous | 2 | N-Channel MOSFET | 6V ~ 18V | 1.47V, 1.84V | 3A, 4A | Non-Inverting | 115 V | 435ns, 365ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |