M/A-Com Technology Solutions Products

CAP SILICON 10PF 10% 50V SMD

• Capacitance: 10pF
• Tolerance: ±10%
• Voltage - Breakdown: 50V
• ESR (Equivalent Series Resistance): -
• ESL (Equivalent Series Inductance): -
• Applications: High Stability
• Features: High Reliability
• Operating Temperature: -55°C ~ 150°C
• Package / Case: Nonstandard Chip
• Height: 0.007" (0.18mm)
• Size / Dimension: 0.010" L x 0.010" W (0.25mm x 0.25mm)

CAP SILICON 9.9PF 10% 100V SMD

• Capacitance: 9.9pF
• Tolerance: ±10%
• Voltage - Breakdown: -
• ESR (Equivalent Series Resistance): -
• ESL (Equivalent Series Inductance): -
• Applications: High Stability
• Features: High Reliability
• Operating Temperature: -55°C ~ 150°C
• Package / Case: Nonstandard Chip
• Height: 0.005" (0.13mm)
• Size / Dimension: 0.015" L x 0.015" W (0.38mm x 0.38mm)

TRANSISTOR RF 14W GAN

• Transistor Type: HEMT
• Frequency: 2.5GHz
• Gain: 15.2dB
• Voltage - Test: 50V
• Current Rating: 800mA
• Noise Figure: -
• Current - Test: 15mA
• Power - Output: 14W
• Voltage - Rated: 65V
• Package / Case: -
• Supplier Device Package: -

TRANSISTOR GAN 100W 1.2-2.0GHZ

• Transistor Type: HEMT
• Frequency: 1.2GHz ~ 2GHz
• Gain: 14.8dB
• Voltage - Test: 50V
• Current Rating: 4.5A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 100W
• Voltage - Rated: 65V
• Package / Case: -
• Supplier Device Package: -

TRANSISTOR GAN 500W 1.2-1.4GHZ

• Transistor Type: HEMT
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 19.22dB
• Voltage - Test: 50V
• Current Rating: 18.1A
• Noise Figure: -
• Current - Test: 400mA
• Power - Output: 500W
• Voltage - Rated: 65V
• Package / Case: -
• Supplier Device Package: -

FET RF 2CH 125V 225MHZ 375-04

• Transistor Type: 2 N-Channel (Dual) Common Source
• Frequency: 225MHz
• Gain: 17dB
• Voltage - Test: 50V
• Current Rating: 16A
• Noise Figure: -
• Current - Test: 100mA
• Power - Output: 200W
• Voltage - Rated: 125V
• Package / Case: 375-04
• Supplier Device Package: 375-04, Style 2

HEMT N-CH 28V 23W DC-3GHZ 8SOIC

• Transistor Type: HEMT
• Frequency: 0Hz ~ 3GHz
• Gain: 14dB
• Voltage - Test: 28V
• Current Rating: 5A
• Noise Figure: -
• Current - Test: 200mA
• Power - Output: 1.5W
• Voltage - Rated: 100V
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-SOIC

HEMT N-CH 48V 50W DC-2.2GHZ

• Transistor Type: HEMT
• Frequency: 0Hz ~ 2.2GHz
• Gain: 15dB
• Voltage - Test: 48V
• Current Rating: 7A
• Noise Figure: -
• Current - Test: 300mA
• Power - Output: 50W
• Voltage - Rated: 160V
• Package / Case: TO-272BC
• Supplier Device Package: TO-272-2

TRANS NPN 350W 960MHZ-1215MHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.4dB
• Power - Max: 350W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 32.5A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: -
• Supplier Device Package: -

TRANSISTOR BIPOLAR 3.10-3.40GHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 7.5dB
• Power - Max: 55W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 6.5A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: -
• Supplier Device Package: -

DIODE PIN CHIP CERAMIC SI

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 1000V
• Current - Max: -
• Capacitance @ Vr, F: 0.3pF @ 100V, 1MHz
• Resistance @ If, F: 1 Ohm @ 100mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 175°C (TJ)
• Package / Case: Die
• Supplier Device Package: Die

SWITCH SP4T 4MMQFN-24LD

• Frequency - Lower: 10MHz
• Frequency - Upper: 4GHz
• Isolation @ Frequency: 45dB @ 4GHz (typ)
• Insertion Loss @ Frequency: 1.9dB @ 4GHz
• IIP3: 50dBm (typ)
• Topology: Absorptive
• Circuit: SP4T
• P1dB: 27dBm
• Features: -
• Impedance: 50 Ohm
• Operating Temperature: -40°C ~ 85°C
• Voltage - Supply: -
• RF Type: General Purpose
• Package / Case: 24-VFQFN Exposed Pad
• Supplier Device Package: 24-PQFN (4x4)

SWITCH GAAS 3GHZ SW-439LF

• Frequency - Lower: DC
• Frequency - Upper: 3GHz
• Isolation @ Frequency: 33dB @ 3GHz (typ)
• Insertion Loss @ Frequency: 0.8dB @ 3GHz
• IIP3: -
• Topology: Reflective
• Circuit: SPDT
• P1dB: 28dBm
• Features: -
• Impedance: 50 Ohm
• Operating Temperature: -40°C ~ 85°C
• Voltage - Supply: -
• RF Type: Cellular
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 10-MSOP

SP3T REFLECTIVE ALGAAS SWITCH

• Frequency - Lower: 50MHz
• Frequency - Upper: 50GHz
• Isolation @ Frequency: 31dB @ 50GHz (typ)
• Insertion Loss @ Frequency: 0.3dB @ 50GHz
• IIP3: -
• Topology: Reflective
• Circuit: SP3T
• P1dB: -
• Features: -
• Impedance: -
• Operating Temperature: -55°C ~ 125°C
• Voltage - Supply: -
• RF Type: General Purpose
• Package / Case: Die
• Supplier Device Package: Die

POWER DIVIDER,2-WAY

• Insertion Loss: 0.8dB
• Frequency: 10MHz ~ 1GHz
• Specifications: -
• Size / Dimension: -
• Package / Case: -

MIXER MMIC 1700-2000 MHZ

• RF Type: General Purpose
• Frequency: 1.7GHz ~ 2GHz
• Number of Mixers: 1
• Gain: -
• Noise Figure: -
• Secondary Attributes: Up/Down Converter
• Current - Supply: -
• Voltage - Supply: -
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

EVAL BOARD FOR XB1007-QT-0G0T

• Type: Amplifier
• Frequency: 4GHz ~ 11GHz
• For Use With/Related Products: XB1007
• Supplied Contents: Board

EVAL BOARD FOR MASWSS0151TR-3000

• Type: Switch, SPDT
• Frequency: 0Hz ~ 3GHz
• For Use With/Related Products: MASWSS0151
• Supplied Contents: Board

EVAL BOARD FOR MAMX-011023

• Type: Mixer
• Frequency: 4GHz ~ 23GHz
• For Use With/Related Products: MAMX-011023
• Supplied Contents: Board

MODULE HYBRID 20-512MHZ

• Frequency: -
• P1dB: -
• Gain: -
• Noise Figure: -
• RF Type: -
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: -
• Package / Case: -
• Supplier Device Package: -

IC AMP MMIC GAAS 20GHZ 16-QFN

• Frequency: 11GHz ~ 20GHz
• P1dB: 14dBm
• Gain: 20dB
• Noise Figure: -
• RF Type: General Purpose
• Voltage - Supply: 5 V ~ 7 V
• Current - Supply: 110mA
• Test Frequency: -
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-QFN (3x3)

11DB FIXED ATTENUATOR

• Attenuation Value: 11dB
• Tolerance: ±0.4dB
• Frequency Range: 0 ~ 40GHz
• Power (Watts): 2W
• Impedance: -
• Package / Case: Die

DIGITAL ATTENUATOR

• Attenuation Value: 31.5dB
• Tolerance: ±0.5dB
• Frequency Range: 0Hz ~ 4GHz
• Power (Watts): -
• Impedance: 50 Ohm
• Package / Case: 32-VFQFN Exposed Pad

DIGITAL ATTENUATOR 15.5DB 5BIT

• Attenuation Value: 15.5dB
• Tolerance: ±0.5dB
• Frequency Range: 0Hz ~ 3.5GHz
• Power (Watts): -
• Impedance: 50 Ohm
• Package / Case: 32-PowerVFQFN

RES SMD 100K OHM 2% 0202

• Resistance: 100 kOhms
• Tolerance: ±2%
• Power (Watts): -
• Composition: Thick Film
• Features: RF, High Frequency
• Temperature Coefficient: ±150ppm/°C
• Operating Temperature: -
• Package / Case: 0202 (0505 Metric)
• Supplier Device Package: 0202
• Size / Dimension: 0.020" L x 0.020" W (0.50mm x 0.50mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

LINEAR OPERATIONAL (OP) AMP

• Type: Postamplifier
• Applications: FTTx and Media Converters
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

IC OPERATIONAL AMP

• Type: -
• Applications: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

IC OPERATIONAL AMP

• Type: Laser Diode Driver
• Data Rate: 622Mbps
• Number of Channels: 1
• Voltage - Supply: 3.3V
• Current - Supply: -
• Current - Modulation: 85mA
• Current - Bias: 100mA
• Operating Temperature: -
• Package / Case: 24-WQFN Exposed Pad
• Supplier Device Package: 24-BCC (4x4)
• Mounting Type: Surface Mount