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Maxim Integrated |
IC MOSFET DRIVER HNM LL SOT23-6
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6 V ~ 14 V
- Logic Voltage - VIL, VIH: 2V, 4.25V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 36ns, 17ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: SOT-23-6 |
Stock2,464 |
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Single | 1 | N-Channel MOSFET | 6 V ~ 14 V | 2V, 4.25V | 3A, 7A | Inverting, Non-Inverting | - | 36ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DRIVER HNM LL SOT23-6
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6 V ~ 14 V
- Logic Voltage - VIL, VIH: 2V, 4.25V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 36ns, 17ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: SOT-23-6 |
Stock3,200 |
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Single | 1 | N-Channel MOSFET | 6 V ~ 14 V | 2V, 4.25V | 3A, 7A | Inverting, Non-Inverting | - | 36ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DRIVER TTL SOT23-6
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 14 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 14ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: SOT-23-6 |
Stock4,384 |
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Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2V | 3A, 7A | Inverting, Non-Inverting | - | 25ns, 14ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DVR 4A 20NS 6-TDFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 15 V
- Logic Voltage - VIL, VIH: 0.8V, 2.1V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 32ns, 26ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-TDFN-EP (3x3)
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Package: 6-WDFN Exposed Pad |
Stock2,048 |
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Single | 1 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) |
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Maxim Integrated |
IC HALF-BRIDGE MOSFET DVR 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 175V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock5,664 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRVR INV/NONINV 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,880 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,848 |
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Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR DUAL INV 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock207,852 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,760 |
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Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSF DRVR HALF BRDG HS 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 50ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,728 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 3A, 3A | Non-Inverting | 125V | 50ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 28 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock5,376 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 28 V | - | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.5 V ~ 28 V
- Logic Voltage - VIL, VIH: 2V, 4.25V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock7,104 |
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Independent | 2 | N-Channel MOSFET | 6.5 V ~ 28 V | 2V, 4.25V | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.5 V ~ 28 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock3,472 |
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Independent | 2 | N-Channel MOSFET | 6.5 V ~ 28 V | - | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.5 V ~ 28 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock3,472 |
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Independent | 2 | N-Channel MOSFET | 6.5 V ~ 28 V | - | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 28 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock3,824 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 28 V | - | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 28 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 42ns, 30ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock3,696 |
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Independent | 2 | N-Channel MOSFET | 4.5 V ~ 28 V | 0.8V, 2V | 2A, 4A | Inverting, Non-Inverting | - | 42ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.5 V ~ 28 V
- Logic Voltage - VIL, VIH: 2V, 4.25V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 32ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock3,680 |
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Independent | 2 | N-Channel MOSFET | 6.5 V ~ 28 V | 2V, 4.25V | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.5 V ~ 28 V
- Logic Voltage - VIL, VIH: 2V, 4.25V
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 24ns, 16ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock5,632 |
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Single | 1 | N-Channel MOSFET | 6.5 V ~ 28 V | 2V, 4.25V | 4A, 8A | Inverting, Non-Inverting | - | 24ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 28 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 24ns, 16ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
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Package: 10-WFDFN Exposed Pad |
Stock3,648 |
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Single | 1 | N-Channel MOSFET | 4.5 V ~ 28 V | - | 4A, 8A | Inverting, Non-Inverting | - | 24ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6.5 V ~ 28 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 24ns, 16ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: 10-TDFN-EP (3x3)
|
Package: 10-WFDFN Exposed Pad |
Stock7,984 |
|
Single | 1 | N-Channel MOSFET | 6.5 V ~ 28 V | - | 4A, 8A | Inverting, Non-Inverting | - | 24ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC DRVR FET P-P 8-UMAX
- Driven Configuration: Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 15 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package: 8-uMax-EP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Stock6,848 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | - | 3A, 3A | RC Input Circuit | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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Maxim Integrated |
IC MOSFET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock4,288 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,624 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 15 V
- Logic Voltage - VIL, VIH: 0.8V, 2.1V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 32ns, 26ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock6,208 |
|
Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock6,784 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,712 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRIVER 12-TQFN
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 12.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 125V
- Rise / Fall Time (Typ): 65ns, 65ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-WQFN Exposed Pad
- Supplier Device Package: 12-TQFN (4x4)
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Package: 12-WQFN Exposed Pad |
Stock7,872 |
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Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 12-WQFN Exposed Pad | 12-TQFN (4x4) |
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Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 20ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock238,176 |
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Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting | - | 25ns, 20ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |